2N2222ACSM Search Results

2n2222a SOT23

Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
Contextual Info: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2222ACSM4

Abstract: LCC3 weight 2n2222a
Contextual Info: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2N2222ACSM4

Contextual Info: Illl w . Illl 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN

2n2222a SOT23

Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2222ACSM

Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

4491E

Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
Contextual Info: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

2N2222ACSM

Abstract: LE17 transistor 3391 F
Contextual Info: SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM • High Speed Saturated Switching • Hermetic Surface Mount Package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage

2N2222A LCC1

Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
Contextual Info: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

2n2222a SOT23

Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
Contextual Info: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2222A 331

Contextual Info: I lll iF t i mi 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN

Contextual Info: SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM • High Speed Saturated Switching • Hermetic Surface Mount Package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage

2N2222ACSM4

Contextual Info: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2N2222A LCC1

Abstract: 2N2222ACSM 2n2222a SOT23
Contextual Info: lili IF F i IMI SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.61 ±0.10 . (0.02 * 0.004) ;

2N2222ACSM

Abstract: SOT23 transistor 2N2222A 2N2222A LCC1
Contextual Info: Illl = ^ = Illl SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ± 0.10 ( 0.02 ± 0 . 004 )

LCC3 weight

Abstract: 2N2222A LCC1 2N2222ACSM-JQR-B 2N2222ACSM 2N2222ACSM4 2N2222ACSM4R
Contextual Info: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2222ACSM

Contextual Info: bOE P - • Ô3.33107 D Ü 0 0 5S b DbO ■ SMLB 'T 'S S 'W SEMELAB PLC SEMELAB 2N2222ACSM HIGH SPEED, MEDIUM POWER, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im ension s in m m

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

IRF5402

Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

2N2222A LCC1

Abstract: 2N2222 LCC3 transistor 2n2222 TO-90 2N2222A2 2N2222ACECC npn 2n2222 transistor 2N2222ACSM4 2N2222ADCSM "PNP Transistor" 2n2222 of 2N2222A
Contextual Info: Search Results Part number search for devices beginning "2N1132" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N1132 PNP TO39 50V 0.6A 30 90 10/0.15 50MHz

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

BSW68

Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
Contextual Info: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.

MCA0616/1

Abstract: T-120-01B Skynet Electronic
Contextual Info: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology