BDS20 Search Results

BDS78

Contextual Info: Philips Components Data sheet status P r o d u c t s p e c ific a t io n date of issue A p ril 1991 BDS202/204/78 PN P silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors in a miniature SMD envelope

BDS202

Abstract: bc 7-25 pnp j78 transistor BDS204 BDS78 IEC134
Contextual Info: Philips Components BDS202/204/78 Data sheet status Product specification date of issue April 1991 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

Contextual Info: M il W : mi BDS20 BDS21 SEME LAB BDS20SM BDS21SM SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN T0220 PACKAGE MECHANICAL DATA Dimensions in mm Di a. 1 23 FEATURES • HERMETIC T0220 METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 2 .5 4

PNP Epitaxial Silicon Transistor sot223

Abstract: BDS78 RF SMD transistors pnp TP 2404 BDS201 BDS202 BDS204 IEC134
Contextual Info: PHILIPS INTERNA TI ON AL SbE Product specification date of issu e April 1991 | 7 i i o â s t i oo4 3m a ? s i m p h i n T-33-tr BDS202/204/78 Data sheet s ta t u s D PNP Silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N D ESCRIPTIO N

BDS201

Abstract: BDS77 BDS203 MSB002
Contextual Info: PHILIPS INTERNA TI ON AL SbE Philips Components status Product specification April 1991 B 7110fl2ti Q 0 4 3 1 3 4 45fl • P H I N T-33 -o s BDS201/203/77 Data sheet date o f issue D NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223

Contextual Info: IUI ËFFi llll BDS20 BDS21 SEME LAB SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN T0220 PACKAGE MECHANICAL DATA Dimensions in mm 4.6 10.6 BDS20SM BDS21SM 0.8 FEATURES • HERMETIC T0220 METAL OR CERAMIC PACKAGES • 1.0 2.70 BSC • HIGH RELIABILITY

Contextual Info: SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: BDS20 BDS20SMD BDS21 BDS21SMD MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 3.6 Dia. 1 0 .6 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY

BDS77

Abstract: BDS201 BDS203 IEC134 USM35
Contextual Info: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

Contextual Info: BDS20 BDS20SMD BDS21 BDS21SMD MECHANICAL DATA Dimensions in mm SILICON PNP/NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 3.6 Dia. 1 0 .6 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY

Contextual Info: Philips Components D a ta s h e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS202/204/78 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN PNP silicon epitaxial base transistors in a miniature SMD envelope

Contextual Info: BDS20 BDS21 SEME LAB MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO220 PACKAGE 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS20SM BDS21SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES

Contextual Info: SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

BDS20

Abstract: LE17
Contextual Info: SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

8217

Abstract: BDS20SMD LE17
Contextual Info: SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

BDS201

Abstract: USM35 BDS77 16Oi BDS203 BDS20 IEC134 UBB012
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”

bdw26

Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BDS10 BDS10 CECC BDS10-SM BDS11 BDS11 CECC BDS12 BDS12 CECC BDS12-SM BDS13 BDS13 CECC BDS13-SM BDS14 BDS14CECC BDS14-SM BDS15 BDS15 CECC BDS15-SM BDS16 BDS16 CECC BDS16-SM BDS17 BDS17 CECC BDS17-SM

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

HT1 npn

Contextual Info: SENELAB LTD 37E D fll331fl7 000DD44 0 .'-'H JU . Ht.1. j U' \\\/'yv TV peN o. ? O p t io n 1'*7 Polarl,y Packa9 e VC e o ¡ £ n, hF E @ /¿.-V : PD V C E /IC BDS10 BDS11 BDS12 BDS13 BDS14 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP TO220M T0220M

Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1