MSB002 Search Results

MSB002 Price and Stock

Filter by Manufacturer

LEMO connectors


LEMO connectors MSB.00.250.LTE200 RF Cable Assemblies 200cm cbl w/LEMO 00 coax plug both ends
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MSB.00.250.LTE200					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	MSB.00.250.LTE200	Bulk			1	1 $53.22 10 $47.55 100 $44.13 1000 $44.13 10000 $44.13	Buy Now
PEI Genesis	MSB.00.250.LTE200					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
LEMO connectors MSB.00.250.LTE150 RF Cable Assemblies 150cm CBL w/LEMO 00 COAX PLUG BOTH ENDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MSB.00.250.LTE150					1 - 10 - 100 - 1000 - 10000 -	Get Quote
PEI Genesis	MSB.00.250.LTE150					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
LEMO connectors MSB.00.250.LTE100 Rf Coaxial Cable, Ffs Str Plug, 1M; \|Lemo MSB.00.250.LTE100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MSB.00.250.LTE100	Bulk	7		1	1 $50.93 10 $45.50 100 $42.23 1000 $42.23 10000 $42.23	Buy Now
PEI Genesis	MSB.00.250.LTE100					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
LEMO connectors MSB.00.250.LTE060 Rf Coaxial Cable, Ffs Str Plug, 0.6M; \|Lemo MSB.00.250.LTE060
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MSB.00.250.LTE060	Bulk			1	1 $52.40 10 $47.16 100 $40.97 1000 $40.97 10000 $40.97	Buy Now
PEI Genesis	MSB.00.250.LTE060					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
LEMO connectors MSB.00.250.RTE060
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
PEI Genesis	MSB.00.250.RTE060					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now

Find more MSB002 price and stock on Findchips.com

MSB002 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUK98150-55A Abstract: ID16 SC-73 Contextual Info: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.	Original	buk98150-55a m3d087 ot223 sc-73 +1id16	PDF
PHT4NQ10T Abstract: SC-73 09581 Contextual Info: PHT4NQ10T TrenchMOS standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features	Original	pht4nq10t m3d087 ot223 msb002 +2sc-73 09581	PDF
buk987 Abstract: BUK9875-100A SC-73 Contextual Info: BUK9875-100A TrenchMOS logic level FET Rev. 01 — 30 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.	Original	buk9875-100a ot223 sc-73 buk987	PDF
BFG198 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a	Original	bfg198 ot223 msb002 cgy2020g +2sca50 647021/1200/01/pp12	PDF
ha 431 transistor Abstract: BSP122 UBB073 transistor 431 N Contextual Info: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching	OCR Scan	bsp122 ot223 0to10 ha 431 transistor +2ubb073 transistor 431 n	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended	Original	bfg198 ot223 msb002 r77/03/pp14	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability	Original	bfg31 ot223 msb002 bfg97 +1r77/02/pp9	PDF
BAT160C Abstract: BAT160S AT160C BAT160 BAT160A Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT160 series Schottky barrier double diodes Product specification Supersedes data of 1999 Mar 26 1999 Sep 20 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAT160 series	Original	m3d087 bat160 mgl171 bat160a +4115002/03/pp8 bat160c bat160s at160c	PDF
BFG135 amplifier Abstract: BFG135 BFG135 - BFG135 MBB300 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor	Original	bfg135 ot223 cgy2020g sca50 +4647021/1200/01/pp12 bfg135 amplifier bfg135 - bfg135 mbb300	PDF
MBK573 Abstract: AT120A BAT120 BAT120A BAT120C BAT120S Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1998 Jan 21 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 series	Original	m3d087 bat120 mgl171 bat120a +6sca57 117027/1200/01/pp8 mbk573 at120a bat120c bat120s	PDF
c 129 transistor Abstract: BLU86 SMD ic catalogue Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile	Original	blu86 ot223 c 129 transistor smd ic catalogue	PDF
BFG35 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor	Original	bfg35 ot223 msb002 125006/03/pp16	PDF
TRANSISTOR GENERAL DIGITAL L6 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor	Original	bfg35 ot223 msb002 r77/03/pp14 +2771-bfg35-t/r transistor general digital l6	PDF
BFG591,115 Abstract: BFG591 Application Notes Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain	Original	bfg591 ot223 msb002 r77/02/pp14 +3771-bfg591-t/r bfg591,115 bfg591 application notes	PDF

BSP225 Abstract: BP317 Philips RDS business bsp225/s911 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor	Original	bsp225 sc13b sca54 137107/00/01/pp12 +3bp317 philips rds business bsp225/s911	PDF
PHT4NQ10LT Abstract: SC-73 Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:	Original	pht4nq10lt m3d087 ot223 sc-73	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor	Original	bfg35 ot223 msb002 r77/03/pp14	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN  Low noise figure 1 emitter  Low intermodulation distortion	Original	bfg94 ot223 msb002 r77/02/pp15	PDF
BFG97 Abstract: BFG31 MBB350 Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 PIN N IN G FEA TUR ES • High output voltage capability PIN D E S C R IP TIO N • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures	OCR Scan	bfg31 ot223 bfg97 msb002-+4mbb350 mbb351 711002b msa035	PDF
BDS77 Abstract: BDS201 BDS203 IEC134 USM35 Contextual Info: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general	OCR Scan	bds201/203/77 ot223 bds202/204/78 bds201 +4bds203 bds77 iec134 usm35	PDF
07342 Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:	Original	pht4nq10lt m3d087 ot223 07342	PDF
transistor smd yw Abstract: AT120A BAT120 BAT120A BAT120C BAT120S Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 BAT120 series Schottky barrier double diodes Product data sheet Supersedes data of 2001 Aug 27 2003 Aug 04 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series FEATURES PINNING	Original	m3d087 bat120 613514/04/pp7 transistor smd yw +4at120a bat120a bat120c bat120s	PDF
BLT50 Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures	Original	blt50 sc08b ot223 philips trimmers 2222 series +4mea218 mea223 rf transistor smd transistor zl	PDF
philips bfq Abstract: FQ236A 236A Contextual Info: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance	OCR Scan	bfq236 bfq236a msb002 ot223 +3philips bfq fq236a 236a	PDF

MSB002 Search Results

MSB002 Price and Stock

LEMO connectors MSB.00.250.LTE200

LEMO connectors MSB.00.250.LTE150

LEMO connectors MSB.00.250.LTE100

LEMO connectors MSB.00.250.LTE060

LEMO connectors MSB.00.250.RTE060

MSB002 Datasheets Context Search

BUK98150-55A

PHT4NQ10T

buk987

BFG198

ha 431 transistor

BAT160C

BFG135 amplifier

MBK573

c 129 transistor

BFG35

TRANSISTOR GENERAL DIGITAL L6

BFG591,115

BSP225

PHT4NQ10LT

BFG97

BDS77

07342

transistor smd yw

BLT50

philips bfq