EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EFA018A
Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
Contextual Info: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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rtc/5/01/psintro24-hour200oc275oc+10b1415gaas fet cross referencegaas fet 70 mil micro-x packagepower fet 70 mil micro-x packageepa240bvn5 micro-x packageepa060b-70mixer ema0.5w ,gaas fetepa480c-sot89
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Excelics EPA018A
Abstract: EPA018A-70 EPA018A7 Excelics 70mil PACKAGE
Contextual Info: Excelics EPA018A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED
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EPA025A70
Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB
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