DIODE RGP Search Results

diode RGP 30M

Contextual Info: RGP 30K, RGP 30M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Fast silicon rectifier diodes RGP 30K, RGP 30M Forward Current: 3 A

Contextual Info: RT9285C Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285C is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

RT9285C

Abstract: TSOT23-6 2x2 dfn
Contextual Info: RT9285C Preliminary Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285C is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

DS9285

Abstract: DS9285A ds-9285
Contextual Info: RT9285A/B Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

Contextual Info: RT9285A/B Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

XDFN

Abstract: WDFN-8L
Contextual Info: RT9285C Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285C is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

2x2 dfn

Abstract: R9285 RT9285A TSOT23-6 rgpio fbgp
Contextual Info: RT9285A/B Preliminary Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

RT9285A

Abstract: RT9285BGJ6 "by 236" diode R9285 RICHTEK MARKING CODE
Contextual Info: RT9285A/B Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

rt9285b

Abstract: R928 RT9285A TSOT23-6 2x2 dfn RT9285
Contextual Info: RT9285A/B Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost VIN Operating Range : 2.7V to 5.5V converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

Diode RGP15M

Abstract: RGP15M
Contextual Info: SEMICONDUCTOR RGP15M TECHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0. B High temperature metallurgically bonded construction Cavity-free glass passivated junction.

diode RGP 20

Contextual Info: SEMICONDUCTOR MBRF20200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. rgP FEATURES è- • Average Output Rectified Current : Io=20A. • Repetitive Peak Reverse Voltage at -è] : V rrm=200V.

mbrf10u150

Abstract: OU150CT MBRF10U150CT mbrf*10U150Ct diode RGP 30a MBRF10U150C
Contextual Info: SEM ICO NDUCTO R MBRF1 OU150CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. rgP FEATURES è- • Average Output Rectified Current : Io=10A. • Repetitive Peak Reverse Voltage : V rrm=150V.

Contextual Info: SEMICONDUCTOR MBRF560CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. rgP FEATURES è- • Average Output Rectified Current : I0=5A. • Repetitive Peak Reverse Voltage : V rrm=60V. • Fast Reverse Recovery Time : ^ = 3 5 ^ .

diode RGP

Contextual Info: SEM ICONDUCTOR MBRF10200CT TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. rgP FEATURES è- • Average Output Rectified Current at -è] DIM : Io=10A. • Repetitive Peak Reverse Voltage

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

IRGDDN600M06

Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Contextual Info: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

rgp10j diode

Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
Contextual Info: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C

RT9287A

Abstract: T9287A 12L marking WDFN12
Contextual Info: RT9287A Preliminary Boost Converter for WLED Power with Dual LDO General Description Features The RT9287A is an integrated solution for WLED and camera power. It contains a boost converter with internal schottky diode to provide WLED power and Dual LDO for

Contextual Info: DRV2665 www.ti.com SLOS790 – MAY 2012 Piezo Haptic Driver with Integrated Boost Converter and Digital Front End Check for Samples: DRV2665 FEATURES DESCRIPTION • The DRV2665 is a piezo haptic driver with integrated 105 V boost switch, integrated power diode,

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

DRV2667

Contextual Info: DRV2667 www.ti.com SLOS807 – JANUARY 2013 Piezo Haptic Driver with Boost, Digital Front End, and Internal Waveform Memory Check for Samples: DRV2667 FEATURES DESCRIPTION • The DRV2667 is a piezo haptic driver with integrated 105 V boost switch, integrated power diode,

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and