DIODE LT 445 Search Results

LT 8233

Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

motor IG 2200 53 X 000 41 R

Abstract: 6504D DIODE 33z POW-R-BRIK diode d7z T 705 scr scr 209
Contextual Info: t i p o w - r - b r i k _ P jwerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h a S B C o n t r o l M o d U lG S 345-800 Amperes/400-3000 Volts POW-R-BRIK™

in4606

Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

D311 equivalent

Abstract: DIODE d307 D312 diode JS 684 THYRISTOR OE 90C 2600 diode lt 445 ic "D312"
Contextual Info: International S Rectifier s e r ie s i r k . f i 52 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules F eatu res Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package

1N6496

Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Contextual Info: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

mosfet 4456

Abstract: 1RFF312R 4456 mosfet LT 312r 1RFF312
Contextual Info: 3 ] H A R R I S IRFF3 1 0 /3 1 1 /3 1 2 / 3 1 3 IRFF3 1 OR/3 1 1 R/3 1 2 R/3 1 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TQ-205AF • 1.35A and 1.15A, 350V - 400V • rDS on = 3-Bfl and 5 .0 fl • Single Pulse Avalanche Energy Rated*

CU421

Contextual Info: r n n m s CM4212A2 CM4216A2 K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Modules 25 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications

ff-310

Contextual Info: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V

Contextual Info: / r u n « TECHNOLOGY LTC1174 _ LTC1174-3.3/LTC1174-5 H igh E ffic ie n c y S te p -D o w n a n d In v e rtin g D C /D C C o n v e rte r FCRTUR6S DCSCRIPTIOn • H ig h Effic ie n c y: U p to 9 4 % The L T C 1 1 7 4 is a simple current m ode DC /D C converter

flyback transformer pin configuration

Abstract: LT1072 design manual Zener diode with 9v FOR POWER SUPPLY Zener diode with 9v zener diode snubber networks amplifier 9v a 500v 3.6v zener diode 500V voltage regulator ethernet transformer Application Note flyback transformer pin
Contextual Info: r DESIGN 1NOTES • V ^ a T illiT T iE F I T iB ■fflVJI IIHILVANA A TEC H N O LO G Y February, 1990 Number 31 in a series from Linear Technology Corporation Isolated Power Supplies for Local Area Networks Sean Gold Circuit Design Introduction Local Area Netw orks such as Eth ernet or Cheapernet™ , re­

GA100TS120U

Contextual Info: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA250TD120U

Abstract: ic 501
Contextual Info: PD - 5.054 PRELIMINARY GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: • . I Bulletin 127093 rev. A 09/97 In te rn a tio n a l I R Rectifier i r k FAST THYRISTOR/ DIODE and . f i 5 2 . s e r i e s INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 150 A ■ Fast tu rn -o ff th yristo r ■ Fast recovery diode ■ High surge capability

Contextual Info: • M302271 00537S1 HGT ■ HAS HARRIS 2 N 6 7 8 4 N -Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 1991 Package Features TO-2Û5AF BOTTOM VIEW • 2.25A, 200V * rDS on = 1-5 n • S O A is Power-Dlssipation Limited SO URCE • Nanosecond Switching Speeds

diode lt 445

Abstract: Diode SM Varactor
Contextual Info: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ VHF to UHF & L Band Operation Low Series Resistance Surface Mountable S O T-23 Package Outline - Single diode SM V1204-99A - Two diodes back to back (SM V 1204-99B ) High Reliability Types:

multicolor led 2-pin

Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Contextual Info: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .

lg led tv electronic diagram

Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .

diamond sx 600

Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Contextual Info: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13

Contextual Info: @ M ITEL DF685 Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS KEY PARAMETERS • Snubber Diode For GTO Applications. ^rrm 4500V ^f av 445A 'fsm 4500A Qr 650(iC trr 5^is FEATURES

MC1466

Abstract: MC1466L MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR T h is u n iq u e “f lo a t in g " re g u la t o r c a n d e liv e r h u n d r e d s o f v o lt s — lim ite d o n ly b y th e b r e a k d o w n v o lt a g e o f th e e x te rn a l s e rie s