1N6511 Search Results

1N6511

Abstract: 1N6100
Contextual Info: A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 1N6100 and 1N6511 JANTX, JANTXV MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)

1N6511

Contextual Info: 1N6511 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as

1N6511

Contextual Info: 1N6511 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as

1N6511

Abstract: MSC1010
Contextual Info: 1N6511 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • QUALIFIED PARTS LISTING: MIL-PRF-19500/474 Bv > 75V at 5uA

Contextual Info: J E R ttW LHB5 1N6511 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • -O 1 3 -O 1 2 HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA

msc1022

Abstract: 1N6511
Contextual Info: 1N6511 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

1N6496

Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Contextual Info: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

SG6101J

Abstract: sg6101
Contextual Info: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

1N5770

Contextual Info: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

FDC9268

Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

1N6510 JAN

Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Contextual Info: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

diode sg 8c

Abstract: SG6510D SG6101J 114-PIN 1N6101 JAN sg 88 diode sg6101 6510 1n6511
Contextual Info: LIN Doc #; 6100 S G 6 1 0 0 /6 5 1 1 , S G 6 1 0 1 /6 5 1 0 T he I n f i n i t e P o w e r o f ,N M \ I ( D iode I n n o v a t i o n A rray P r o d u c t i o n D ata DESCRIPTION T he SG 6100/SG6511 a n d SG 6101/ SG6510 d io d e arrays are m o n o lith ic,