1N5768 Search Results

Contextual Info: J E R ttW LHB5 1N5768 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V

10-PIN

Abstract: 1N5768 1N5770 diode 474 a
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5768 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete,

Contextual Info: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

1N5768

Abstract: mx diode 10-PIN 1N5770
Contextual Info: 1N5768 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

1N5771

Abstract: 1N5773 1N5769 1N5768
Contextual Info: TYPES 1N5768 TH R U 1N5775 SILICON DIODE ARRAYS B U L L E T IN N O . D L -S 7 3 1 1 9 8 7 , M A R C H 1 9 7 3 C O R E -D R IV E R D IO D E A R R A Y S For Application With Magnetic Cores • Plated-Wire Memories • Decoding or Encoding Applications Airborne Computers

1N5768JAN

Abstract: 1N5768JANTX 1N5768JANTXV 1N5770JAN 1N5770JANTX 1N5770JANTXV 1N5772JAN 1N5772JANTX 1N5772JANTXV 1N5774JAN
Contextual Info: FAIRCHILD DIODES DIODES MILITARY QUALIFIED DIODE ARRAYS NUMERIC LISTING CERAMIC PACKAGES BV V Min V Max 1N5768JAN 60 1.0 2 1N5768JANTX 60 1.0 100 3 1N5768JANTXV 60 1.0 100 4 1N5770JAN 60 1.0 100 5 1N5770JANTX 60 1.0 100 6 1N5770JANTXV 60 1.0 7 1N5772JAN

1N5768

Abstract: Diode Array
Contextual Info: SENSITRON SEMICONDUCTOR 1N5768 TECHNICAL DATA DATA SHEET 5151, REV. - Isolated Diode Array Applications: • High Frequency Data Lines • RS-323 & RS-432 Networks • LAN, Ethernet, I/O Ports • IEC61000-4 compatible for ESD / EFT / Surge Features: • •

Contextual Info: 1N5768+JAN Diodes Common Cathode Diode Array Military/High-RelY @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit8 I(F) Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m

MSC1011

Abstract: 1N5768
Contextual Info: 1N5768 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 2 3 FEATURES: • • • • 4 HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V

Contextual Info: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

7L431

Abstract: 5772A 1l431 7l431a inductive loop circuit diagram MIL-S-19500/474 SG2273P 2N2907 equivalent 1N5772 JANTX 2N2907
Contextual Info: SG2273/SG3273 5ILICDN GENERAL POWER OPERATIONAL AMPLIFIER LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2273/3273 is a monolithic power operational amplifier which features a high current, low saturation voltage, flyback protected output stage optimized for driving heavy inductive loads. Capable of operation in a single

10-PIN

Abstract: 1N5768
Contextual Info: 5770A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5770 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete,

U11H

Abstract: linfinity 8 ceramic dip ir U11H
Contextual Info: i i N f r v SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 m M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

SG5772F

Contextual Info: LIN Doc #; 5768 SGS768/SG5770/SG5772/SG5774 SG6506/SG6507/SG6508/SG6509 D T he I n f i n i t e P o w e r o f I n n o v a t i i ode A P r o d u c t i o n DESCRIPTION T he Linfinity series o f d io d e arrays fe a tu re h ig h b re a k d o w n , h ig h s p e e d

1N6496

Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Contextual Info: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

Contextual Info: 1N5770 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARAN CE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRI PT I ON These low capacitance diode arrays with common anode are multiple, discrete, isolated

linfinity

Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
Contextual Info: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V minimum breakdown voltage • 500mA current capability per diode

1N6506

Contextual Info: SG5768, SG5770, SG5772 , SG5774 SG6506/SG6507/SG6508/SG6509 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V m inim um breakdown voltage

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.