M779B Search Results

Contextual Info: 5 f GEC PLESSEY S e p t e m b e r 19 9 5 S E M I C O N D U C T O R S DS4216-3.2 DF754 FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000^C Qr APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding.

Contextual Info: së GEC P L E S S E Y o c o t b e r i 996 S E M I C O N D U C T O R S DS4214-3.4 DF654 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VBRM 3500V 675A F AV 6000A FSM 900|iC 6.5(is • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■

Contextual Info: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

Contextual Info: DF654 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4214 - 3.5 Supersedes O ctober 1996 version, DS4214 - 3.4 March 1998 • Induction Heating. KEY PARAMETERS V RRM 3500V ■ A.C. M otor Drives. Jf AV ■ Inverters And C hoppers. ■ W elding. ■ High Frequency R ectification.

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Thyristor 865A

Abstract: AN4506 AN4839 AN4853 DF754 sine wave ups designing
Contextual Info: DF754 DF754 Fast Recovery Diode Replaces March 1998 version, DS4216-3.3 DS4216-4.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding

DS4217-2

Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

DF685

Abstract: DS4303-1
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Contextual Info: DF654 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1996 version, DS4214 - 3.4 DS4214 - 3.5 APPLICATIONS • KEY PARAMETERS V RRM 3500V 675A Jf A V 6000A FSM 900|iC Q Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.

Contextual Info: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 - 3.3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.

LIC AGENTS DATA

Contextual Info: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 -3 .3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf A V 8000A FSM 1000(lC Q, 6 .0 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■

Contextual Info: S i GEC P L E S S E Y SEPTEMBER 1995 SEMICONDUC TOR S DS4303-1.2 DF685 FAST RECOVERY DIODE KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650(lC Or APPLICATIONS vRRM • Snubber Diode For GTO Applications. 5|iS FEATURES ■ Double Side Cooling. ■ High Surge Capability.

AN4506

Abstract: AN4839 AN4853 DF654
Contextual Info: DF654 DF654 Fast Recovery Diode Replaces March 1998 version, DS4214-3.5 DS4214-4.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 675A IFSM 6000A Qr 900µC trr 6.5µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding

NDF653

Abstract: df653
Contextual Info: DF653 / NDF653 DF653 / NDF653 Fast Recovery Diode Replaces January 2000 version, DS4203-4.0 DS4203-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 1600V IF AV 660A IFSM 6500A Qr 45µC trr 1.4µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DF754

Contextual Info: DF754 DF754 Fast Recovery Diode Replaces January 2000 version, DS4216-4.0 DS4216-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding

AN4506

Abstract: AN4839 AN4853 DF752
Contextual Info: DF752 DF752 Fast Recovery Diode Replaces March 1998 version, DS4212-3.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 2500V IF AV 1050A IFSM 12000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding

DSF11060SG

Contextual Info: DSF11060SG DSF11060SG Fast Recovery DioGH DS4548 -  JXO\ 20 /1 31791 KEY PARAMETERS

DS4217-2

Contextual Info: @ M ITEL DSF11060SG Fast Recovery Diode SE M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^rrm Snubber Diode For GTO Circuits. 6000V ^f a v 4 0 0 A 'f s m 4200A Qr 700|iC

Contextual Info: DF752 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes July 1996 version, DS4212 - 3.3 DS4212 - 3.4 KEY PARAMETERS V RRM 2500V 1050A Jf A V 12000A FSM 1000(lC Q, 6 .0 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.

DSF11060SG

Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

DF754

Contextual Info: DF754 DF754 Fast Recovery Diode Replaces March 1998 version, DS4216-3.3 DS4216-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding

1000A 100V power diode

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling