DIODE 1N4149 Search Results

1N4149

Contextual Info: 1N4149 HIGH SPEED SWITCHING DIODE DO - 35 PRV : 100 Volts Io : 150 mA FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free 1.00 25.4 min. 0.079(2.0 )max. 0.150 (3.8)

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

Contextual Info: 1N4149 Small Signal Switching Diode. Peak Reverse Voltage VRM = 100 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4149 Online Store 1N4149 Diodes Small Signal Switching Diode. Peak Reverse Voltage Transistors Integrated Circuits VRM = 100 V. Maximum Average Rectified Current IAV =

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

IN5062

Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
Contextual Info: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

1N4447

Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.

Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.

IN4154

Abstract: in4447 IN4448 in4151 1N4149 diode 1n4446 1N4447 1N4446 1N444B Diode 1n4149
Contextual Info: COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 FEATURES • M etallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers M etallurgical Bonding and is very popular fo r general purpose sw itching applications.

Contextual Info: {DISCRETE/OPTO! 909725Q TO SHIBA DISCR ETE/OPTO *• -, . 6 7C e 09289 O T O ï - o ? Silicon E p ita xial-'Planar Type 1N4149 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES:

1n4149

Contextual Info: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current

11202-1

Abstract: mil-prf-19500 1n4151
Contextual Info: 1N4149-1,51-1,54-1 & 1N4446-1 – 1N4449-1 Available Screening in reference to MIL-PRF-19500 available Computer Switching Diode DESCRIPTION These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These

Contextual Info: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current

1N4149DCSM

Abstract: 1N4149qCSM
Contextual Info: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13

1N4149CSM

Contextual Info: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13

1N4149qCSM

Contextual Info: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13

IN4149

Abstract: IN4154 DIODe IN4446 1N4446 in4448 4N* diode 1N4447 LN4149 1N4154 1N4149
Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • M e ta llu rg ic a l Bond • Planar Passivated • DO-35 DESCRIPTION This se rie s o ffe rs M e ta llu rg ic a l B onding and Is very pop u lar fo r general purpose

1N4149

Abstract: ci2pf TOSHIBA 1N4149
Contextual Info: T {DISCRETE/OPTO! 9097250 TOSHIBA DISCR ETE/OPTO *• dF t -, I t D TV S S O . 67C e OQDclHflc! 4 | O T o ï -o ? 09289 Silicon Ep ita x ia l-'P la n a r Type 1N4149 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices