DE475 Search Results

DE475-501N44A

Abstract: 400P PIN diode SPICE model
Contextual Info: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

DE475-501N44A

Abstract: 10-15V 400P PIN diode SPICE model
Contextual Info: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

DE475-102N21A

Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXFZ140N25T

Contextual Info: Advance Technical Information IXFZ140N25T GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 Test Conditions Maximum Ratings

nec 2401

Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
Contextual Info: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTZ550N055T2 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 D D D Symbol Test Conditions Maximum Ratings

IXFZ520N075T2

Contextual Info: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings

offline UPS

Abstract: IXTZ550N055T2
Contextual Info: Advance Technical Information IXTZ550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 Symbol Test Conditions VDSS TJ = 25°C to 175°C

475102N2

Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ140N25T RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 D D D G Symbol Test Conditions

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions

400P

Abstract: DE475-501N44A Directed Energy
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

400P

Abstract: DE475-102N21A
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

mosfet 62N

Abstract: 400P DE475-102N20A 102N20
Contextual Info: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DE-Series

Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

ir2113 amplifier circuit diagram class D

Abstract: IXCP10M90S Full Bridge with IR2113 design IGBT 0623 IR2113 IN FULL BRIDGE IXCP10M45S IXDP630PI IR2113 FULL BRIDGE IR2113 APPLICATION NOTE circuit diagram off-line UPS for desktop
Contextual Info: ICs 0623 www.ixys.com Contents Page Page General Contents QA and Environmental Management Systems Product Offering Alphanumeric Index Nomenclature Symbols and Terms Patents and Intellectual Property IXYS III IV V VI XVII XX XXII MICRONIX Analog Mixed Signal ASIC Capabilities

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

102N06

Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
Contextual Info: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product

IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

Abstract: IXFZ520N075T2 IXTZ550N055T2
Contextual Info: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces

DEIC420 RF MOSFET Gate Driver IC

Abstract: 102N06 DEIC420 DE-275 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet DE-375
Contextual Info: EVIC420 DEIC420 High Frequency Gate Driver IC Evaluation Board General Description The EVIC420 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the DEI DEIC420 gate drive IC, as well as to provide a building block