DE150 Search Results

nec 2401

Abstract: DE150-101N09A PIN diode SPICE model 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient

PIN diode SPICE model

Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100

DE150-201N09A

Abstract: 201N09 PIN diode SPICE model DE-150
Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200

nec 2401

Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
Contextual Info: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR

Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient

Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

canon

Abstract: regulateur de tension A55-14X equivalente
Contextual Info: BMEAZDA LVU àmasque perforé Shadow-Mask pour T élévision en couleur CATHÛSCÛPE TRICHROMIE ^ 14 ¥ • • • • Luminophores à rendement élevé. Rapport des courants de faisceaux voisins de 1. B rillance accrue de l'écran. Montage à compensation thermique du

PCO-7120

Abstract: PCA-9145
Contextual Info: PCO-7120 PULSED LASER DIODE • • • • • • • Compact Economical OEM Module 500mA to 50A Output <9nS Rise Time Variable Pulse Width From 12nS to >1uS Repetition Frequency To 1MHz Diode May Be Mounted Directly On The PCO-7120 Pulsed Current Monitor Output

222Z 2Kv

Abstract: HR R 472K 2kv ceramic capacitor B-102k 2kv hr r 102k 2kv f 222z 2kv hr 472K 1kv ceramic capacitor DE0905 F DE0805 de1105 DE1207
Contextual Info: This is the PDF file of catalog No.C84E-6. No.C84E6.pdf HIGH VOLTAGE CERAMIC CAPACITOR 250V-6.3kV HIGH VOLTAGE CERAMIC CAPACITOR 250V-6.3kV Murata Manufacturing Co., Ltd. Cat.No.C84E-6 This is the PDF file of catalog No.C84E-6. No.C84E6.pdf ! CONTENTS ! GENERAL DESCRIPTION OF CERAMIC CAPACITORS•····································2i

k 2645 MOSFET

Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
Contextual Info: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology

mospower applications handbook

Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
Contextual Info: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101

PULSED LASER DIODE DRIVER

Abstract: IXDD415SI PCO-7120 7120 Directed Energy DE-150 for LASER RANGE FINDER . LIDAR DE150 12E9S
Contextual Info: THE PULSE OF THE FUTURE PCO-7120 PULSED LASER DIODE DRIVER MODULE • • • • • • • The PCO-7120 is a compact, economical OEM laser diode driver module designed to provide extremely fast, high current pulses to drive laser diodes in range finder, LIDAR, atmospheric communications and other applications requiring high

13.56MHZ 3KW GENERATOR

Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A

opti 82c392

Abstract: teac fd 235hf opti 486 chipset
Contextual Info: OPTÌ-486SXWB PC/AT Chipset 82C493/82C392/82C206 Preliminary 82C493/82C392 DATA BOOK Version 1.1 August 16, 1991 / OPTi, Inc., 2525 Walsh A venue, Santa Clara, CA 95051 (408) 9 8 0 -8 1 7 8 FAX: 4 0 8 -9 8 0 -8 8 6 0 Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes

DE-Series

Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high

501N04

Abstract: DE-150-501N04 DE-150
Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com

PULSED LASER DIODE DRIVER

Abstract: DLD-100B Directed Energy laser diode driver 200 mhz 6E7S
Contextual Info: • Output Current <5A To 40A • Repetition Frequency To 1 MHz • Variable Pulse Width From 12ns to 1µs • Economical OEM Module DLD-100B PULSED LASER DIODE DRIVER The DLD-100B is a high speed, high current pulsed laser diode driver designed to operate at 5A to 40A

DE-150

Abstract: z diode 14a
Contextual Info: 2849995 DIRECTED ENERGY I NC ~~T7 97D 00006 D eT| 20 4=1^5 □□□ODOfc, 3 J “ DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. DE-150 10IN14 SPECIFICATIONS PULSED POWER COMPONENTS AND SYSTEMS The Centre for Advanced Technology 2301 Research Blvd., Suile 101

DE-150

Abstract: 12S100 Directed Energy suhl
Contextual Info: - - 9 7 D DIRECTE» ENERGY INC ^ nnnnn n » E | S f l M t:icn S T'-' 2 / OODDOOfl 7 | DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. 4 ^ DE-150 20IP05 SPECIFICATIONS % PULSED POWER COMPONENTS AND SYSTEMS The Centre or Advanced Technology

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

ir2113 amplifier circuit diagram class D

Abstract: IXCP10M90S Full Bridge with IR2113 design IGBT 0623 IR2113 IN FULL BRIDGE IXCP10M45S IXDP630PI IR2113 FULL BRIDGE IR2113 APPLICATION NOTE circuit diagram off-line UPS for desktop
Contextual Info: ICs 0623 www.ixys.com Contents Page Page General Contents QA and Environmental Management Systems Product Offering Alphanumeric Index Nomenclature Symbols and Terms Patents and Intellectual Property IXYS III IV V VI XVII XX XXII MICRONIX Analog Mixed Signal ASIC Capabilities

high power rf 10kW

Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order

IXDD415SI

Abstract: IXDD415 DE-275 EVDD415 DE275102N06A DE-150 Directed PUSH PULL MOSFET DRIVER DE275 DE275-102N06A
Contextual Info: EVDD415 IXDD415 High Frequency Gate Driver IC Evaluation Board General Description The EVDD415 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS/DEI IXDD415 gate drive IC, as well as to provide a building block

DE1207 103

Abstract: DE1910
Contextual Info: CAPACITORS DISC CERAMIC CAPACITORS S i g f! Is co uf s 5 LU E Ul % 3= DC S 9 o z o o o u co co DC • T y p ic a l Exam ples of Tem perature C haracteristics l • High-Voltage Ceramic Capacitors / Ceramic Capacitors Complying with Safety Standard CO DC o