DE150 Search Results

nec 2401

Abstract: DE150-101N09A PIN diode SPICE model 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient

PIN diode SPICE model

Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100

DE150-201N09A

Abstract: 201N09 PIN diode SPICE model DE-150
Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200

nec 2401

Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
Contextual Info: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR

Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient

nec 2401

Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
Contextual Info: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

200W MOSFET POWER AMP

Abstract: nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A
Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient

nec 2401

Abstract: 201N09 DE150-201N09A
Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

nec 2401

Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
Contextual Info: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

nec 2401

Abstract: Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed
Contextual Info: Directed Energy, Inc. An DE150-201N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR

nec 2401

Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice
Contextual Info: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

200W MOSFET POWER AMP

Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
Contextual Info: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

canon

Abstract: regulateur de tension A55-14X equivalente
Contextual Info: BMEAZDA LVU àmasque perforé Shadow-Mask pour T élévision en couleur CATHÛSCÛPE TRICHROMIE ^ 14 ¥ • • • • Luminophores à rendement élevé. Rapport des courants de faisceaux voisins de 1. B rillance accrue de l'écran. Montage à compensation thermique du

222Z 2Kv

Abstract: HR R 472K 2kv ceramic capacitor B-102k 2kv hr r 102k 2kv f 222z 2kv hr 472K 1kv ceramic capacitor DE0905 F DE0805 de1105 DE1207
Contextual Info: This is the PDF file of catalog No.C84E-6. No.C84E6.pdf HIGH VOLTAGE CERAMIC CAPACITOR 250V-6.3kV HIGH VOLTAGE CERAMIC CAPACITOR 250V-6.3kV Murata Manufacturing Co., Ltd. Cat.No.C84E-6 This is the PDF file of catalog No.C84E-6. No.C84E6.pdf ! CONTENTS ! GENERAL DESCRIPTION OF CERAMIC CAPACITORS•····································2i

k 2645 MOSFET

Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
Contextual Info: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology

mospower applications handbook

Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
Contextual Info: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101

PULSED LASER DIODE DRIVER

Abstract: IXDD415SI PCO-7120 7120 Directed Energy DE-150 for LASER RANGE FINDER . LIDAR DE150 12E9S
Contextual Info: THE PULSE OF THE FUTURE PCO-7120 PULSED LASER DIODE DRIVER MODULE • • • • • • • The PCO-7120 is a compact, economical OEM laser diode driver module designed to provide extremely fast, high current pulses to drive laser diodes in range finder, LIDAR, atmospheric communications and other applications requiring high

13.56MHZ 3KW GENERATOR

Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A

opti 82c392

Abstract: teac fd 235hf opti 486 chipset
Contextual Info: OPTÌ-486SXWB PC/AT Chipset 82C493/82C392/82C206 Preliminary 82C493/82C392 DATA BOOK Version 1.1 August 16, 1991 / OPTi, Inc., 2525 Walsh A venue, Santa Clara, CA 95051 (408) 9 8 0 -8 1 7 8 FAX: 4 0 8 -9 8 0 -8 8 6 0 Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

472k 1kv

Abstract: r 472K 1kv sec capacitor b 472K 1kv DE0405 capacitor 472k 1KV hr r 103k 2kv de0705 472K capacitor capacitor 472K 2KV hr r 681k- 1kv
Contextual Info: LEADED CAPACITORS, NETWORKS & HV CAPACITORS MEDIUM VOLTAGE CAPACITORS 1kV to 6kVDC E.I.A. CLASS II & III DE Series DIMENSIONS: mm Non-Vertical Crimp: DE0507/DE0607 type and rated voltage 6.3kV type Vertical Crimp: 1kV 4.0, 2kV 5.0, 3kV 6.0, 6kV 7.0 D max.

DE-Series

Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high

501N04

Abstract: DE-150-501N04 DE-150
Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com