nec 2401
Abstract: DE150-101N09A PIN diode SPICE model 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient
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de150-101n09a1100pnec 2401pin diode spice model+1101n09a
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PIN diode SPICE model
Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100
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de150-101n09a101n09a1100ppin diode spice model+2rf power mosfet1n spice
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nec 2401
Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
Contextual Info: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR
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de150-101n09a1100pnec 2401qgs 80w 30 ohm+2directed energy201n09
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DE275-101N30A
Abstract: DE-275-101N30 de275 PIN diode SPICE model
Contextual Info: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient
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de275-101n30a101n09a1100pde-275-101n30+2de275pin diode spice model
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