IXFZ520N075T2 Search Results

IXFZ520N075T2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFZ520N075T2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 465A DE-475	Original	PDF		6

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IXYS Corporation IXFZ520N075T2 MOSFET N-CH 75V 465A DE475
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DigiKey	IXFZ520N075T2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFZ520N075T2 Discmsft Nchtrenchgate-Gen2 De475/Tube \|Littelfuse IXFZ520N075T2
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IXFZ520N075T2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFZ520N075T2 Contextual Info: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings	Original	IXFZ520N075T2 DE475 IXFZ520N075T2	PDF
Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions	Original	IXFZ520N075T2 DE475	PDF
MMIX1F520N075T2 Abstract: IXFZ520N075T2 ixfz520n075 Contextual Info: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions	Original	MMIX1F520N075T2 IXFZ520N075T2 MMIX1F520N075T2 IXFZ520N075T2 ixfz520n075	PDF
140tr Contextual Info: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions	Original	MMIX1F520N075T2 IXFZ520N075T2 140tr	PDF
Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions	Original	MMIX1F520N075T2 IXFZ520N075T2	PDF
IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages Abstract: IXFZ520N075T2 IXTZ550N055T2 Contextual Info: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces	Original	IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages	PDF