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    IXYS Corporation DE475-102N21A

    RF MOSFET, N CHANNEL, 1KV, DE-475; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:24A; Power Dissipation:1.8kW; Operating Frequency Min:-; Operating Frequency Max:30MHz; No. of Pins:6Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
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    IXYS Integrated Circuits Division DE475-102N21A

    RF MOSFET N-CHANNEL DE475 / RF Mosfet N-Channel 1800W DE475
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    Win Source Electronics DE475-102N21A 230
    • 1 $218.15
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    102N21A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DE475-102N21A

    Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
    Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice PDF

    475102N2

    Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
    Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE475-102N21A 30MHz 475102N2 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21 PDF

    400P

    Abstract: DE475-102N21A
    Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		DE475-102N21A 30MHz 400P DE475-102N21A PDF