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    102N21 Price and Stock

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    TDK Corporation B82724J2102N21

    Current-Compensated Ring Core Double Choke 39mH 1A 750mOhm 30% Radial Leaded Tray - Trays (Alt: B82724J2102N021)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B82724J2102N21 Tray 9 Weeks 480
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    • 1000 $2.20
    • 10000 $1.58
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    ABLIC Inc. S-19102N21H-M5T1U

    - Tape and Reel (Alt: S-19102N21H-M5T1U)
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    Avnet Americas S-19102N21H-M5T1U Tape & Reel 24 Weeks 3,000
    • 1 $0.74
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    Mouser Electronics S-19102N21H-M5T1U
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    TDK Corporation B82724A2102N21

    Current-Compensated Ring Core Double Choke 39mH 1A 750mOhm 30% Radial Leaded Tray - Trays (Alt: B82724A2102N021)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B82724A2102N21 Tray 9 Weeks 600
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    • 1000 $2.32
    • 10000 $1.67
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    TDK Corporation B82724A2102N021

    Common Mode Chokes / Filters RING CORE CHOKE 2x39mH 1A +60 C
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    Mouser Electronics B82724A2102N021
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    Central Semiconductor Corp 2N2195B TIN/LEAD

    Bipolar Transistors - BJT NPN 45Vcbo 25Vceo 5.0Vebo 150mA 20pF
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    Mouser Electronics 2N2195B TIN/LEAD
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    102N21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DE475-102N21A

    Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
    Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		de475-102n21a30mhzpin diode spice model102n21a+4400p102n21pin model spicepin diode model spice PDF

    475102N2

    Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
    Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		de475-102n21a30mhz475102n2102n21+4rf mosfets1000 volt mosfet400pvolt21 PDF

    400P

    Abstract: DE475-102N21A
    Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		de475-102n21a30mhz400p PDF