DDR2533C Search Results

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

IS43DR16128

Abstract: IS46DR16128 IS43DR16128-3DBL IS43DR16128-3DBI
Contextual Info: IS43/46DR16128 SEPTEMBER 2012 2Gb x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 333MHz (667 MT/s Data Rate) 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7

400B

Abstract: DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5
Contextual Info: D a t a S he et , Rev. 1.3, J a n. 2 00 5 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-01 Published by Infineon Technologies AG,

HYB18T1G160C2F-25F

Abstract: HYB18T1G400C2F-3S HYB18T1G800C2F-25F HYI18T1G160C2F-3 DDR2-800E
Contextual Info: January 2008 HY[B/I]18T1G400C2[C/F] HY[B/I]18T1G800C2[C/F] HY[B/I]18T1G160C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.02 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: IS43/46DR16128A PRELIMINARY INFORMATION OCTOBER 2013 2Gb x16 DDR2 SDRAM FEATURES •              Clock frequency up to 333MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7

HYB18T1G400C2FL-3

Abstract: HYB18T1G400C2F-3S
Contextual Info: March 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.20 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.20, 2008-03

DDR2-667C

Contextual Info: December 2006 HYB18T256400BF L HYB18T256800BF(L) HYB18T256160BF(L) 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.0 Internet Data Sheet HYB18T256xx0BF(L)–[25F/…/5] 256-Mbit Double-Data-Rate-Two SDRAM

HYB18T512-800B2F3S

Abstract: HYB18T512160B2F-3S
Contextual Info: July 2007 HY[B/I]18T512400B2[C/F] L HY[B/I]18T512800B2[C/F](L) HY[B/I]18T512160B2[C/F](L) 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HY[B/I]18T512[40/80/16]0B2[C/F](L) 512-Mbit Double-Data-Rate-Two SDRAM

Contextual Info: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM

HYB18TC512160CF-19F

Abstract: HYB18TC512160CF
Contextual Info: July 2008 HYB18T C51280 0 CF HYB18T C51216 0 CF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.10 Internet Data Sheet HYB18TC512[80/16]0CF 512-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.10, 2008-07

is46dr32801a-5bbla1

Abstract: 126-ball IS46DR32801A
Contextual Info: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

IS43DR83200A

Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Contextual Info: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle

qimonda hyb18t1g400bf-2.5

Contextual Info: May 2007 HY[B/I]18T1G400B[F/C] L HY[B/I]18T1G800B[F/C](L) HY[B/I]18T1G160B[F/C](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HY[B/I]18T1G[40/80/16]0B[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: IS43/46DR83200A IS43/46DR16160A 32Mx8, 16Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

databook

Contextual Info: UFX6000 USB 2.0 Hi-Speed Graphics Controller with VGA, HDMI/DVI, and Digital RGB Interfaces PRODUCT FEATURES Databook Highlights         Target Applications      USB to Video Adapters Docking Stations, USB Port Replicators

IS43DR16128A

Contextual Info: IS43/46DR16128A PRELIMINARY INFORMATION NOVEMBER 2013 2Gb x16 DDR2 SDRAM FEATURES •              Clock frequency up to 333MHz 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital

HYS72T64001HR-5-A

Abstract: HYS72T32000HR-5-A HYS72T64001HR-3.7-A PC2-3200R-333 HYS72T128020HR HYS72T HYS72T32000HR PC2-3200
Contextual Info: D a t a S h e e t , Rev. 1.0, O c t . 2 0 0 4 HYS72T32000HR–[3.7/5]–A HYS72T64001HR–[3.7/5]–A HYS72T64020HR–[3.7/5]–A 240-Pin Registered DDR2 SDRAM Modules DDR2 SDRAM RDIMM SDRAM RoHS Compliant Memory Products N e v e r s t o p t h i n k i n g .

512mb pc2-4200u 444 12 d3

Abstract: PC2 4200E HYS64T256020HU PC2-3200 PC2-4200U-444-11-b1 44411
Contextual Info: D a t a S h e e t , Rev. 1.0, Sep. 2004 HYS64T256020HU–[3.7/5]–A HYS72T256020HU–[3.7/5]–A 240-Pin Unbuffered DDR2 SDRAM Modules DDR2 SDRAM UDIMM SDRAM RoHS Compliant Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.

Contextual Info: HY5PS12421C L FP HY5PS12821C(L)FP HY5PS121621C(L)FP 512Mb DDR2 SDRAM HY5PS12421C(L)FP HY5PS12821C(L)FP HY5PS121621C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: IS43/46DR16160B 16Mx16 DDR2 DRAM PRELIMINARY INFORMATION NOVEMBER 2012 FEATURES DESCRIPTION •฀ VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V •฀ JEDEC standard 1.8V I/O SSTL_18-compatible •฀ Double data rate interface: two data transfers per clock cycle

H5PS5162g

Abstract: H5PS5162GFR H5PS5162 DDR2800D
Contextual Info: H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5162GFR-xxC H5PS5162GFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

H5PS5162

Abstract: H5PS5162FFR DDR21
Contextual Info: H5PS5162FFR Series 512Mb DDR2 SDRAM H5PS5162FFR-xxC H5PS5162FFR-xxI H5PS5162FFR-xxL H5PS5162FFR-xxJ [New Product] H5PS5162FFR-xxP H5PS5162FFR-xxQ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any