400B Search Results

47C400B

Abstract: 47c200b 47C101
Contextual Info: TOSHIBA TMP47C990E, TMP47C990G CMOS 4-Bit Microcontroller TMP47C990E, TMP47C990G The 47C990, which is equipped with an EPROM as program memory, is a piggyback type evaluator chip used for develop­ ment and operational confirmation of the 47C200B/400B and

Contextual Info: TO SHIBA TMP47P400V CMOS 4-BIT MICROCONTROLLER TMP47P400VN TMP47P400VF The 47P400V is the system evaluation LSI of 47C200B/400B with 32K bits one-time PROM. The 47P400V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764AD.

Contextual Info: TO SH IBA TMP47C200B/400B CMOS 4-BIT MICROCONTROLLER TMP47C200BN, 400BN TMP47C200BF, 400BF The 47C200B/400B are high speed and high perform ance 4 -b it single chip microcomputers, in tegrating ROM, RAM, in p u t/o u tp u t ports, tim er/counters, and a serial interface on a chip. The 47C200B/400B are th e standard

630D3PL

Abstract: 800D3PL OESA630 oesa 630 250D3PL OESA250 400D3PL OZXK-1 OESA400D3PL 63G1
Contextual Info: Low Voltage Products PowerLine, Switch Fuses OS and OESA Brochure OS 30 GB 01-05 l O 1 I O Test DIN BS NFC UL CSA OESA 200.400B_ OZXA 11 NO I OH_145J12E002S FF O OESAZX 119 O OZXB 3 OZXB 5 OH_ l l O ON G OFAM 00/aM 160A OFF OFAM 00/aM 160A OFAM 00/aM 160A

Contextual Info: TO SHIBA TMP47P400V CMOS 4-Bit Microcontroller TMP47P400VN TMP47P400VF The 47P400V is the system evaluation LSI of 47C200B/400B with 32K bits one-time PROM. The 47P400V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764AD.

47C400

Abstract: 47C200 47C20 TMP47P400V TMP47P400VF TMP47P400VN 47C400B 47c40 DIN 50049
Contextual Info: TO SHIBA TMP47P400V CMOS 4-BIT MICROCONTROLLER TMP47P400VN TMP47P400VF The 47P400V is the system evaluation LSI of 47C200B/400B with 32K bits one-time PROM. The 47P400V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764AD.

Contextual Info: SN54LV175A, SN74LV175A QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR S C LS 400B - A P R IL 1998 - R EVISED O C TO BE R 1998 • EPIC Enhanced-Performance Implanted CMOS Process • Typical V q lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C •

BUK637-400A

Abstract: BUK637-400B
Contextual Info: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control

AB28F200B5B80

Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
Contextual Info: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time

Contextual Info: WED3C7410E16M-400BX HI-RELIABILITY PRODUCT RISC Microprocessor Multichip Package OVERVIEW *ADVANCED The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles,

ICC3-400

Contextual Info: f Z 7 SGS-THOMSON ICC03-400B2 Application Specific Discretes A.S.D . IGNITION CONTROL CIRCUIT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL . DEDICATED THYRISTOR STRUCTURE FOR IGNITION OPERATION. . APPLICATION SPECIFIC DISCRETES ASD™ .

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery

Contextual Info: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

sgs Thomson Thyristor

Abstract: ICC3-400 thyristor capacitive discharge ignition use ic in capacitor discharge ignition IGNITION THOMSON ICC03-400B2 antiparallel scr 7270 ic capacitive discharge ignition capacitor discharge ignition
Contextual Info: £ = T S G S -T H O M S O N ^ 7 # RfflDOMmLKgTTliOlD ! Application Specific Discretes A.S.D. ICC03-400B2 IGNITION CO NTRO L C IR C U IT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL ■ DEDICATED THYRISTOR STRUCTURE FOR

transistor A 564

Abstract: 100-C BUK637-400B
Contextual Info: N AflER P H I L I P S / D I S C R E T E Philips Semiconductors blE D • bbS3T31 DDBOfibS OHB W A P X - Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

BUK657-400B

Abstract: diode,FET
Contextual Info: N AMER PHILIPS/DISCRETE t.'îE D bbsa'ïai 0030ÔAS r i i « a p x Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

BUK455

Abstract: BUK455-400A BUK455-400B T0220AB
Contextual Info: N AMER SSE D P H I L I P S/ DI S CR ET E • 1^53^31 GQ20500 T ■ B U K 455-400A B U K 455-400B P o w erM O S tra n s isto r r - 5 7 - / 3 G E N E R A L D ESC R IP TIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

spw 080

Abstract: tmp47c400bn TMP47C200BN 47C400 TMP47C200BF 47C200 TMP47C400 TMP47C200B TMP47C400BF TMP47P400VN
Contextual Info: TOSHIBA TMP47C200B/400B CMOS 4-BIT MICROCONTROLLER TM P47C200BN , TM 400BN TM P47C200BF, TM 400BF The 47C200B/400B are high speed and high performance 4-bit single chip microcomputers, integrating ROM, RAM, input/output ports, timer/counters, and a serial interface on a chip. The 47C200B/400B are the standard

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK427-400A

Abstract: BUK427-400B UNC20
Contextual Info: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

M11111

Abstract: BUK455 BUK455-400A BUK455-400B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE D • bk.SB'ïBl G O SQ SO O T ■ PowerMOS transistor BUK455-400A BUK455-400B r - 3 7 - / 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK627-400A

Abstract: BUK627-400B ha 431 transistor transistor 431 N
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

28F008B3

Abstract: 28F016B3 28F320B3 28F400B3 28F640B3 28F400 8891h
Contextual Info: 3 Volt Advanced Boot Block Flash Memory 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming