DDR 8MX16 TSOP 2 66 PIN Search Results

em6a9160ts

Abstract: EM6A9160 DDR 8MX16 tsop 2 66 pin em6a9160ts-5 8MX16DDR
Contextual Info: EtronTech EM6A9160 8M x 16 DDR Synchronous DRAM SDRAM (Rev. 1.4 May/2006) Pin Assignment (Top View) Features • • • • • • • • • • • • • • • • • Fast clock rate: 300/275/250/200MHz Differential Clock CK & /CK Bi-directional DQS

TSOP 86 Package

Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
Contextual Info: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16

Automotive Product Selector Guide

Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Contextual Info: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

IS23SC55160

Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

q1257

Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Contextual Info: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

W986416EH

Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Contextual Info: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/

Contextual Info: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 Rev. 1.0 June 2003 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release

IS43LR32640

Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and

512MB 8Mx32 DDR DRAM

Contextual Info: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,

K4H511638B-TCCC

Abstract: K4H510838B-TCCC K4H510838B-TCC4
Contextual Info: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics

Contextual Info: SU5720835D4DZCU October 5, 2004 Ordering Information Part Numbers Description Module Speed SM5720835D4DZCG 8Mx72 64MB , DDR, 200-pin SO-DIMM, Unbuffered, ECC, 8Mx16 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5720835D4DZCG 8Mx72 (64MB), DDR, 200-pin SO-DIMM, Unbuffered, ECC,

Contextual Info: SU5641635D4NZCU September 14, 2004 Ordering Information Part Numbers Description Module Speed SM5641635D4NZCG 16Mx64 128MB , DDR, 200-pin SO-DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5641635D4NZCG

Contextual Info: SU5640835D4NZCU September 10, 2004 Ordering Information Part Numbers Description Module Speed SM5640835D4NZCG 8Mx64 64MB , DDR, 200-pin SO-DIMM, Unbuffered, 8Mx16 Based, Non-ECC, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5640835D4NZCG

K4H511638F

Abstract: K4H510838F DDR333 DDR400 DDR266
Contextual Info: K4H510838F K4H511638F Industrial DDR SDRAM 512Mb F-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

TSOP RECEIVER

Abstract: DDR333 512MB CL2.5 DDR266 DDR333 DDR400 K4H511638B
Contextual Info: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

DDR200

Abstract: DDR266B HYMD116M6456-H HYMD116M6456-L
Contextual Info: HYMD116M6456-H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD116M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual InLine Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix

Contextual Info: HYMD116M645A6-K/H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD116M645A6-K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix

DDR200

Abstract: DDR266B HYMD18M6456-H HYMD18M6456-L
Contextual Info: HYMD18M6456-H/L 8Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD18M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules SO-DIMMs which are organized as 8Mx64 high-speed memory arrays. Hynix HYMD18M6456-H/L

K4H511638B-TCCC

Contextual Info: DDR SDRAM 512Mb B-die x8, x16 preliminary DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 0.0 Rev. 0.0 Mar. 2003 DDR SDRAM 512Mb B-die (x8, x16) preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Rev. 0.0 Mar. 2003