2002 - DDR RAM 512M
Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
Text: Number Decoder - 2 Elpida Products E D D ×××××××× - ×× - × Elpida Memory Product Family D: DDR SDRAM, DDR SDRAM Module E: DDR2, DDR2 Module Type K: DDR Mobile RAM (Bare Chip / Package) B: Module C: Bare Chip D: Monolithic Device L: SDR Mobile RAM (Bare Chip / Package) R: RDRAM, RIMM S , Product Family K: DDR Mobile RAM L: SDR Mobile RAM Package C×: Bare Chip Density / Page Size 12 , Device Product Family Spec. Detail K: DDR Mobile RAM L: SDR Mobile RAM Blank: Normal
|
Original
|
PDF
|
ECT-TS-1942
1200MHz
184-pin
160-pin
232-pin
1066MHz
DDR RAM 512M
ELPIDA mobile DDR
TSOP II elpida
Elpida Memory
DDR2-533
DDR2-667
DDR2-800
PC2-5300
PC2-6400
|
2003 - q1257
Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Text: (SDRAM). 16 Mb DDR SDRAMs DDR2 SDR SDRAMs Reduced Latency (RLDRAM) Graphics RAM Mobile-RAM , Type D L = = DDR SDRAM or Graphics RAM Low-Power SDRAM (Mobile-RAM) Supply Voltage 18 , Production DDR /DDR2 Modules Density SDR Components Graphics RAM Q67100 Q1600 now TSOP , Components and DIMMs (PC3200) supplier, Infineon continues to 4 GB DDR Registered DIMM expand its memory product portfolio 2 GB DDR SO-DIMM with the recent introduction of: DDR2 Components and
|
Original
|
PDF
|
2002791-D-RAM
hoch17
DDR400
PC3200)
B112-H6731-G10-X-7600
q1257
Q1129
Q4331
TSOP66
Q4311
tsop 4021
tsop ddr2 ram
DDR RAM 512M
DRAM spectrum infineon
TSOP-66
|
2012 - K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: 4â12 ⢠DDR3 SDRAM ⢠DDR2 SDRAM ⢠DDR SDRAM ⢠SDRAM ⢠Mobile DRAM ⢠Graphics DDR SDRAM ⢠DRAM Ordering Information FLASH - SSD Pages 13â15 samsung.com/flash â , Now 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb ( 512M x4) * 18 M393B5270CH0-C(F8/H9)(04/05) Lead Free & Halogen Free 1066 , Lead Free & Halogen Free 1066/1333 4 Now M393B1K70CH0-C(F8/H9)(04/05) 2Gb ( 512M x4) * 36
|
Original
|
PDF
|
BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
|
2012 - samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: 8G 4G 2G 1G 32 M 64M 128M 256M 512M 1G 2G 4G 6G 8G RAM mSDR â , ⢠DDR3 SDRAM ⢠DDR2 SDRAM ⢠DDR SDRAM ⢠SDRAM ⢠Mobile DRAM ⢠Graphics DDR , Halogen Free 1066/1333/1600/1866 2 Now 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb ( 512M x4) * 18 M393B5270CH0-C(F8/H9)(04 , M393B1K70CH0-C(F8/H9)(04/05) 2Gb ( 512M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now
|
Original
|
PDF
|
BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
|
2002 - DDR RAM 512M
Abstract: DDR dRAM 512M M2S12D20TP M2S12D30TP
Text: . Function Reserved for Future Use Organization 2 n 2: x4, 3: x8 DDR Synchronous DRAM Density 12: 512M , DDR SDRAM (Rev.1.1) MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L MITSUBISHI Feb.ELECTRIC '02 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432 , ) Latency Contents are subject to change without notice. MITSUBISHI ELECTRIC -1- DDR SDRAM (Rev.1.1) MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L MITSUBISHI Feb.ELECTRIC '02 512M Double Data
|
Original
|
PDF
|
M2S12D20/
M2S12D20TP
432-word
M2S12D30TP
216-word
M2S12D20/30TP
133MHz,
DDR RAM 512M
DDR dRAM 512M
|
2011 - Automotive Product Selector Guide
Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Text: 8Mx32 DDR IS43R32800B 2.5V 4K 200,166 8Mx32 DDR IS43R32800D 2.5V 4K 200,166,133 512M 64Mx8 DDR , . Vcc Refresh 16M 64M 128M 256M 512M Speed (MHz) Pkg (#Pins) 166,143 166,143 166,143 166 , 2K 4K 4K 4K 4K 4K 4K 4K 4K 4K 8K 8K 8K 8K 4K 4K 8K 8K 8K 8K 2.5V DDR (Double Data Rate , BGA(144) 8Mx32 IS46R32800D 2.5V 4K 200,166,133 BGA(144) 512M 64Mx8 IS46R86400D 2.5V 8K 200,166,133 , 8K 200,166,133 BGA(144) 1.8V Mobile DDR (Double Data Rate) Synchronous Automotive DRAM Den Org Part
|
Original
|
PDF
|
|
DDR RAM 512M
Abstract: DDR266 DDR332 EMD12164P EMD12164P-60 EMD12164P-75
Text: Preliminary EMD12164P 512M : 32M x16 Mobile DDR SDRAM Document Title 512M : 32M x 16 Mobile , office. 1 Rev 0.0 Preliminary EMD12164P 512M : 32M x 16 Mobile DDR SDRAM 512M : 32M x , EMD12164P 512M : 32M x 16 Mobile DDR SDRAM Table 2: Pad Description Symbol Type Descriptions , Preliminary EMD12164P 512M : 32M x 16 Mobile DDR SDRAM Device Operation Simplified State Diagram , Preliminary EMD12164P 512M : 32M x 16 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM 13 DQS GENERATOR
|
Original
|
PDF
|
EMD12164P
16bit
133MHz
125MHz
111MHz
100MHz
DDR RAM 512M
DDR266
DDR332
EMD12164P
EMD12164P-60
EMD12164P-75
|
2009 - K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: SRAM · DDR / II / II+ SRAM · QDR / II / II+ SRAM MULTI-CHIP PACKAGE www.samsung.com/semi/mcp · , · Internal DVD · Hard Disk Drives · Internal COMBO D RAM Pages 20 -25 · Synchronous SRAM , Graphics DDR SDRAM · DRAM Ordering Information · OneDRAMTM: see Fusion MCP www.samsung.com/semi/dram · DDR3 SDRAM · DDR2 SDRAM · DDR · SDRAM · Mobile SDRAM · RDRAM Pages 4-14 Pages 29-33 , RoHS 800/1066/1333 2 8GB 1Gx72 M393B1G70DJ1-C(F7/F8) 2Gb ( 512M x4)*36 RoHS 800
|
Original
|
PDF
|
BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
|
512M
Abstract: DDR266 DDR332 EMD12324P EMD12324P-60 EMD12324P-75
Text: Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM Document Title 512M : 16M x 32 Mobile , office. 1 Rev 0.0 Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM 512M : 16M x , EMD12324P 512M : 16M x 32 Mobile DDR SDRAM Table 2: Pad Description Symbol Type Descriptions , Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM Device Operation Simplified State Diagram , Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM 13 DQS GENERATOR
|
Original
|
PDF
|
EMD12324P
32bit
133MHz
125MHz
111MHz
100MHz
512M
DDR266
DDR332
EMD12324P
EMD12324P-60
EMD12324P-75
|
2010 - is62c51216al
Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Text: ,166 512M 64Mx8 DDR IS43R86400D 2.5V 8K 200,166 32Mx16 DDR IS43R16320D 2.5V 8K 200,166 16Mx32 , 408-969-6600 Product Selector Guide 9 Dynamic RAM (Cont'd) 1.8V Mobile DDR (Double Data Rate , www.issi.com 408-969-6600 Product Selector Guide 7 Dynamic RAM 3.3V EDO and Fast Page Mode DRAM , TSOP2(86), BGA(90) Prod KGD available 512M 64Mx8 SDR IS42S86400B 3.3V 8K 166,143,133 , November 2010 408-969-6600 Prod www.issi.com KGD available Dynamic RAM (Cont'd
|
Original
|
PDF
|
|
DDR RAM 512M
Abstract: DDR266 DDR332 EMD12324PV EMD12324PV-60 EMD12324PV-75 fbga90balls
Text: Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM Document Title 512M : 16M x 32 Mobile , office. 1 Rev 0.0 Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM 512M : 16M x , Rev 0.0 Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM 90Ball FBGA ASSIGNMENT , Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM Device Operation Simplified State Diagram , Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM REFRESH COUNTER
|
Original
|
PDF
|
EMD12324PV
32bit
143MHz
133MHz
125MHz
111MHz
100MHz
DDR RAM 512M
DDR266
DDR332
EMD12324PV
EMD12324PV-60
EMD12324PV-75
fbga90balls
|
2014 - taylor
Abstract: No abstract text available
Text: AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks GENERAL DESCRIPTION The , -4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks PIN CONFIGURATION Alliance Memory, Inc., 551 , Rev1-4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks INPUT / OUTPUT FUNCTION , -4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks SIMPLIFIED STATE DIAGRAM CKEH : Clock Enable , -4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks BASIC FUNCTION DESCRIPTION This 512Mb Mobile DDR
|
Original
|
PDF
|
AS4C32M16MD1
AS4C32M16MD1
Rev1-4Jan2014
60-Ball
taylor
|
DDR RAM 512M
Abstract: DDR2 pcb design DMD1001 hyperlynx DDR2 layout PRF-38534 ddr2 ram pcb layout electronic schematic ddr2 ram chip DDR2 schematic
Text: combination of a processor, gate array, ASIC, RAM and flash memories. These can be combined with other , family of standard COTS SDRAM, DDR , DDR2, flash and SRAM in PBGA and QFP packages. Benefits include , utilization of PCB routing. Provides wide organizations in a standard component. SDRAM, DDR , DDR2 densities , Stack Stack Processor 35mm 2 x 512M Flash Stack 2 x 1G DDR2 1G DDR2 35mm 35mm 3 x 512M DDR2 Stack 3mm Mechanical Outline · Processor SiP 30mm x 33mm 597 CBGA TOP VIEW
|
Original
|
PDF
|
DMD1001
DDR RAM 512M
DDR2 pcb design
DMD1001
hyperlynx
DDR2 layout
PRF-38534
ddr2 ram pcb layout
electronic schematic
ddr2 ram chip
DDR2 schematic
|
2005 - K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING , Section A MEMORY AND STORAGE DDR SDRAM DDR SDRAM COMPONENTS Density 256M Org 64Mx4 , K4H561638F-GC(L)B3/CCC 60 ball FBGA Pb-free available 512M 128Mx4 266/333/400 K4H510438C-UC(L)B0/B3/CCC 66 pin TSOP Pb-free available 512M 128Mx4 266/333/400 K4H510438C-ZC(L)B0/B3/CCC 60 ball FBGA Pb-free 512M 64Mx8 266/333/400 K4H510838C-UC(L)B0/B3/CCC 66
|
Original
|
PDF
|
BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
|
|
2014 - AS4C32M16MD1
Abstract: No abstract text available
Text: AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) LPDDR MEMORY 512M (32Mx16bit) Confidential 1 Mobile DDR SDRAM Rev. 2.0/February 2014 AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) Revision History , . 2.0/February 2014 AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb , Truth Table The DDR Mobile RAM recognizes the following commands specified by the CS#, RAS#, CAS#, WE
|
Original
|
PDF
|
AS4C32M16MD1
32Mx16bit)
200MHz
400Mbps
512Mbit
16bits
AS4C32M16MD1
|
2009 - EDE2116ACBG
Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Text: .7 10. DDR SDRAM , .8 12. DDR Mobile RAMTM - Barechip .9 13. DDR Mobile RAMTM - JEDEC Standard ( 14. DDR Mobile RAMTM -FBGA , -E 1.5+/-0.075 8K/64ms 30.5/1.20 2Gbit(x4) (1G-A DDP) 36 4GB 512M x 72 2 PC3
|
Original
|
PDF
|
E1454E90
240-pin
M01E0706
EDE2116ACBG
EDE2116ACBG-1J-F
EDE1116AGBG-1J-F
DDR3-800D
ELPIDA lpddr
DDR3-800E
EDE1116AGBG
EDJ1108DBSE
DDR3 layout
EDE1032AGBG
|
RS600ME
Abstract: RC410M AR2413 ATI RC410M AD-9019S rs600me sb600 T5500 yonah BA59-01966A T2250
Text: ) 8ms Typ.700 300cd/m2 SXGA (1280 x 1024) Only 1700g RAM Type MEM Extension LCD Panel LCD Size LCD , Non-Glare / Glare Intel Yonah Core ATI RC410M DDR II 2 SODIMM 10/100, Atheros 802.11b/g Optional : Modem , DDR II 2 SODIMM 10/100, 802.11b/g (Option) Modem (Option) Int. Gfx. / Ext. Gfx. SATA2 (3.5"for DT , 1105-001686 1105-001684 1105-001728 1105-001687 512M (SEC) 512M (IN) 1GB(SEC) 512M (SEC) 512M (IN) 1GB(SEC) 1GB
|
Original
|
PDF
|
800MHz
RS600ME
SB600
256MB,
512MB,
300mm
336mm
300cd/m2
M470T6554CZ3-CD5
533Mhz
RC410M
AR2413
ATI RC410M
AD-9019S
rs600me sb600
T5500
yonah
BA59-01966A
T2250
|
2009 - IS23SC55160
Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: 8K 200,166 8Mx32 DDR IS43R32800B 2.5V 4K 200,166 512M 64Mx8 DDR IS43R86400D 2.5V 8K 200,166 , RAM 3.3V EDO and Fast Page Mode DRAM Den Org Type Part No. Vcc 16M 4Mx4 EDO IS41LV44002B 3.3V , Comment (3) KGD available 166,143,133 TSOP2(86), BGA(90) Prod 512M 64Mx8 SDR IS42S86400B 3.3V , . 2009 www.issi.com Product Selector Guide 408-969-6600 7 Dynamic RAM (Cont'd , IS42SM32800D 3.3V 4K 8Mx32 LPSDR IS42RM32800D 2.5V 4K 8Mx32 LPSDR IS42VM32800D 1.8V 4K 512M 16Mx32
|
Original
|
PDF
|
|
2008 - is25c64B
Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: 512M 32Mx16 DDR IS43R16320B 2.5V 8K 200,166 Pkg (#Pins) TSOP2(66) BGA(60) BGA(144) BGA(144 , 2008 408-969-6600 www.issi.com L Dynamic RAM 3.3V EDO and Fast Page Mode DRAM Den Org , NR NR Prod NR NR Prod NR NR Prod NR Prod NR Prod NR Prod Comment 512M 64Mx8 SDR , November 2008 www.issi.com Product Selector Guide 408-969-6600 7 Dynamic RAM (Cont'd , LPSDR IS42VM32800D 1.8V 4K 133, 100 TSOP2(86),BGA(90) S=NOW 512M 32Mx16 LPSDR IS42SM16320B 3.3V 8K
|
Original
|
PDF
|
|
2011 - K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: ¢ DDR3 SDRAM ⢠DDR2 SDRAM ⢠DDR SDRAM ⢠SDRAM ⢠Mobile DRAM ⢠Graphics DDR SDRAM â , ¢ Asychronous ⢠Synchronous ⢠NtRAM⢠⢠Late-Write RR SRAM ⢠DDR Synchronous SRAM ⢠QDR , ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now , Now M393B1K70CH0-C(F8/H9/K0)(04/05) 2Gb ( 512M x4) * 36 Lead Free & Halogen Free 1066/1333
|
Original
|
PDF
|
BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
|
2001 - DDR RAM 512M
Abstract: No abstract text available
Text: CAMContent-Addressable Memory RAM CAM RAM IP CAM RAM Quartus II CAM RAM 4 CAM RAM APEX CAM RAM IP 192.25.27.28 09 09 High IP 192.25.22.xxx 0A 0A , Queuing WRR(Weighted Round-Robin) WFQ Excalibur TM ARM MIPS-basedTM 512M , RISC MIPS ARM SDRAM DDR QoS ISP Excalibur QoS PLD ASIC NRE QoS ASIC
|
Original
|
PDF
|
M-WP-EXCQOS-01/JP
DDR RAM 512M
|
2012 - IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: 32Mx8 16Mx16 16Mx16 8Mx32 8Mx32 512M 64Mx8 32Mx16 16Mx32 DDR DDR DDR DDR DDR DDR DDR DDR DDR DDR , (Cont'd) 32M 64M 128M 256M 512M 1.8V Mobile DDR (Double Data Rate) Synchronous Automotive DRAM , IS66WVE4M16BLL *Contact SRAM Marketing for questions Cellular RAM Den 16M 32M 64M Org Part No , Technology, Inc. Dynamic RAM 3.3V EDO and Fast Page Mode DRAM Den Org Type Part No. Vcc 4M 256Kx16EDO , www.issi.com Dynamic RAM (Cont'd) 3.3V SDR (Single Data Rate) Synchronous DRAM DenOrg Type Part No. Vcc
|
Original
|
PDF
|
i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
|
2010 - K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: /semi/sram · Asychronous · Synchronous · NtRAMTM · Late-Write R-R SRAM · DDR / II / II+ SRAM · QDR , Internal DVD · Internal COMBO DRAM · Graphics DDR SDRAM · DRAM Ordering Information Pages 24-27 , DDR2 SDRAM · DDR SDRAM · SDRAM · Mobile SDRAM · RDRAM Pages 4-13 DDR3 SDRAM REGISTERED , M393B5270CH0-C(F8/H9/K0*)(04/05) 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now , 4 Now M393B1K70CH0-C(F8/H9/K0*)(04/05) 2Gb ( 512M x4) * 36 Lead Free & Halogen Free 1066
|
Original
|
PDF
|
BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
|
RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: DDR SDRAM 5a 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a 13a NAND FLASH COMPONENTS, SMART MEDIA , M366S6453ETS-C7A00 M37456453ETS-C7A00 2 1 2 2 512M : (64Mx8)*16 128Mx72 PC133 512M : (64Mx8)*18 , 2004 Section MEMORY DRAM A DDR SDRAM COMPONENTS Density Org Speed (Mbps) Part , K4H561638F-GC(L)B0/A2/B3/CC 60 ball FBGA 512M 128Mx4 266/266/333 K4H510438B-TC(L)B0/A2/B3 66
|
Original
|
PDF
|
BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
|
2007 - K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM , SYNCHRONOUS SRAM SPB & FT SRAM NtRAM LATE-WRITE R-R SRAM DDR / II / II+ SRAM QDR / II / II+ SRAM , )*18 (128M x8)*18 st. ( 512M x4)*18 st. ( 512M x4)*18 Voltage:1.8V Package Lead-free Lead-free , (64M x8)*9 (64M x8)*18 (128M x4)*36 st. ( 512M x4)*18 st. ( 512M x4)*18 Module Height , . 3 MEMORY AND STORAGE DDR2 / DDR SDRAM DDR2 SDRAM UNBUFFERED MODULES Density 512MB 1GB
|
Original
|
PDF
|
BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
|