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    2002 - DDR RAM 512M

    Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
    Text: Number Decoder - 2 Elpida Products E D D ×××××××× - ×× - × Elpida Memory Product Family D: DDR SDRAM, DDR SDRAM Module E: DDR2, DDR2 Module Type K: DDR Mobile RAM (Bare Chip / Package) B: Module C: Bare Chip D: Monolithic Device L: SDR Mobile RAM (Bare Chip / Package) R: RDRAM, RIMM S , Product Family K: DDR Mobile RAM L: SDR Mobile RAM Package C×: Bare Chip Density / Page Size 12 , Device Product Family Spec. Detail K: DDR Mobile RAM L: SDR Mobile RAM Blank: Normal


    Original     		PDF ECT-TS-1942 1200MHz 184-pin 160-pin 232-pin 1066MHz DDR RAM 512M ELPIDA mobile DDR TSOP II elpida Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400

    2003 - q1257

    Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
    Text: (SDRAM). 16 Mb DDR SDRAMs DDR2 SDR SDRAMs Reduced Latency (RLDRAM) Graphics RAM Mobile-RAM , Type D L = = DDR SDRAM or Graphics RAM Low-Power SDRAM (Mobile-RAM) Supply Voltage 18 , Production DDR /DDR2 Modules Density SDR Components Graphics RAM Q67100 Q1600 now TSOP , Components and DIMMs (PC3200) supplier, Infineon continues to 4 GB DDR Registered DIMM expand its memory product portfolio 2 GB DDR SO-DIMM with the recent introduction of: DDR2 Components and


    Original     		PDF 2002791-D-RAM hoch17 DDR400 PC3200) B112-H6731-G10-X-7600 q1257 Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66

    2012 - K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: 4–12 • DDR3 SDRAM • DDR2 SDRAM • DDR SDRAM • SDRAM • Mobile DRAM • Graphics DDR SDRAM • DRAM Ordering Information FLASH - SSD Pages 13–15 samsung.com/flash â , Now 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb ( 512M x4) * 18 M393B5270CH0-C(F8/H9)(04/05) Lead Free & Halogen Free 1066 , Lead Free & Halogen Free 1066/1333 4 Now M393B1K70CH0-C(F8/H9)(04/05) 2Gb ( 512M x4) * 36


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    2012 - samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: 8G 4G 2G 1G 32 M 64M 128M 256M 512M 1G 2G 4G 6G 8G RAM mSDR â , • DDR3 SDRAM • DDR2 SDRAM • DDR SDRAM • SDRAM • Mobile DRAM • Graphics DDR , Halogen Free 1066/1333/1600/1866 2 Now 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb ( 512M x4) * 18 M393B5270CH0-C(F8/H9)(04 , M393B1K70CH0-C(F8/H9)(04/05) 2Gb ( 512M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    2002 - DDR RAM 512M

    Abstract: DDR dRAM 512M M2S12D20TP M2S12D30TP
    Text: . Function Reserved for Future Use Organization 2 n 2: x4, 3: x8 DDR Synchronous DRAM Density 12: 512M , DDR SDRAM (Rev.1.1) MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L MITSUBISHI Feb.ELECTRIC '02 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432 , ) Latency Contents are subject to change without notice. MITSUBISHI ELECTRIC -1- DDR SDRAM (Rev.1.1) MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L MITSUBISHI Feb.ELECTRIC '02 512M Double Data


    Original     		PDF M2S12D20/ M2S12D20TP 432-word M2S12D30TP 216-word M2S12D20/30TP 133MHz, DDR RAM 512M DDR dRAM 512M

    2011 - Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: 8Mx32 DDR IS43R32800B 2.5V 4K 200,166 8Mx32 DDR IS43R32800D 2.5V 4K 200,166,133 512M 64Mx8 DDR , . Vcc Refresh 16M 64M 128M 256M 512M Speed (MHz) Pkg (#Pins) 166,143 166,143 166,143 166 , 2K 4K 4K 4K 4K 4K 4K 4K 4K 4K 8K 8K 8K 8K 4K 4K 8K 8K 8K 8K 2.5V DDR (Double Data Rate , BGA(144) 8Mx32 IS46R32800D 2.5V 4K 200,166,133 BGA(144) 512M 64Mx8 IS46R86400D 2.5V 8K 200,166,133 , 8K 200,166,133 BGA(144) 1.8V Mobile DDR (Double Data Rate) Synchronous Automotive DRAM Den Org Part


    Original     		PDF

    DDR RAM 512M

    Abstract: DDR266 DDR332 EMD12164P EMD12164P-60 EMD12164P-75
    Text: Preliminary EMD12164P 512M : 32M x16 Mobile DDR SDRAM Document Title 512M : 32M x 16 Mobile , office. 1 Rev 0.0 Preliminary EMD12164P 512M : 32M x 16 Mobile DDR SDRAM 512M : 32M x , EMD12164P 512M : 32M x 16 Mobile DDR SDRAM Table 2: Pad Description Symbol Type Descriptions , Preliminary EMD12164P 512M : 32M x 16 Mobile DDR SDRAM Device Operation Simplified State Diagram , Preliminary EMD12164P 512M : 32M x 16 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM 13 DQS GENERATOR


    Original     		PDF EMD12164P 16bit 133MHz 125MHz 111MHz 100MHz DDR RAM 512M DDR266 DDR332 EMD12164P EMD12164P-60 EMD12164P-75

    2009 - K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: SRAM · DDR / II / II+ SRAM · QDR / II / II+ SRAM MULTI-CHIP PACKAGE www.samsung.com/semi/mcp · , · Internal DVD · Hard Disk Drives · Internal COMBO D RAM Pages 20 -25 · Synchronous SRAM , Graphics DDR SDRAM · DRAM Ordering Information · OneDRAMTM: see Fusion MCP www.samsung.com/semi/dram · DDR3 SDRAM · DDR2 SDRAM · DDR · SDRAM · Mobile SDRAM · RDRAM Pages 4-14 Pages 29-33 , RoHS 800/1066/1333 2 8GB 1Gx72 M393B1G70DJ1-C(F7/F8) 2Gb ( 512M x4)*36 RoHS 800


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    512M

    Abstract: DDR266 DDR332 EMD12324P EMD12324P-60 EMD12324P-75
    Text: Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM Document Title 512M : 16M x 32 Mobile , office. 1 Rev 0.0 Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM 512M : 16M x , EMD12324P 512M : 16M x 32 Mobile DDR SDRAM Table 2: Pad Description Symbol Type Descriptions , Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM Device Operation Simplified State Diagram , Preliminary EMD12324P 512M : 16M x 32 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM 13 DQS GENERATOR


    Original     		PDF EMD12324P 32bit 133MHz 125MHz 111MHz 100MHz 512M DDR266 DDR332 EMD12324P EMD12324P-60 EMD12324P-75

    2010 - is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: ,166 512M 64Mx8 DDR IS43R86400D 2.5V 8K 200,166 32Mx16 DDR IS43R16320D 2.5V 8K 200,166 16Mx32 , 408-969-6600 Product Selector Guide 9 Dynamic RAM (Cont'd) 1.8V Mobile DDR (Double Data Rate , www.issi.com 408-969-6600 Product Selector Guide 7 Dynamic RAM 3.3V EDO and Fast Page Mode DRAM , TSOP2(86), BGA(90) Prod KGD available 512M 64Mx8 SDR IS42S86400B 3.3V 8K 166,143,133 , November 2010 408-969-6600 Prod www.issi.com KGD available Dynamic RAM (Cont'd


    Original     		PDF

    DDR RAM 512M

    Abstract: DDR266 DDR332 EMD12324PV EMD12324PV-60 EMD12324PV-75 fbga90balls
    Text: Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM Document Title 512M : 16M x 32 Mobile , office. 1 Rev 0.0 Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM 512M : 16M x , Rev 0.0 Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM 90Ball FBGA ASSIGNMENT , Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM Device Operation Simplified State Diagram , Preliminary EMD12324PV 512M : 16M x 32 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM REFRESH COUNTER


    Original     		PDF EMD12324PV 32bit 143MHz 133MHz 125MHz 111MHz 100MHz DDR RAM 512M DDR266 DDR332 EMD12324PV EMD12324PV-60 EMD12324PV-75 fbga90balls

    2014 - taylor

    Abstract: No abstract text available
    Text: AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks GENERAL DESCRIPTION The , -4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks PIN CONFIGURATION Alliance Memory, Inc., 551 , Rev1-4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks INPUT / OUTPUT FUNCTION , -4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks SIMPLIFIED STATE DIAGRAM CKEH : Clock Enable , -4Jan2014 AS4C32M16MD1 512M Mobile DDR SDRAM 8Mb x 16 bits x 4 Banks BASIC FUNCTION DESCRIPTION This 512Mb Mobile DDR


    Original     		PDF AS4C32M16MD1 AS4C32M16MD1 Rev1-4Jan2014 60-Ball taylor

    DDR RAM 512M

    Abstract: DDR2 pcb design DMD1001 hyperlynx DDR2 layout PRF-38534 ddr2 ram pcb layout electronic schematic ddr2 ram chip DDR2 schematic
    Text: combination of a processor, gate array, ASIC, RAM and flash memories. These can be combined with other , family of standard COTS SDRAM, DDR , DDR2, flash and SRAM in PBGA and QFP packages. Benefits include , utilization of PCB routing. Provides wide organizations in a standard component. SDRAM, DDR , DDR2 densities , Stack Stack Processor 35mm 2 x 512M Flash Stack 2 x 1G DDR2 1G DDR2 35mm 35mm 3 x 512M DDR2 Stack 3mm Mechanical Outline · Processor SiP 30mm x 33mm 597 CBGA TOP VIEW


    Original     		PDF DMD1001 DDR RAM 512M DDR2 pcb design DMD1001 hyperlynx DDR2 layout PRF-38534 ddr2 ram pcb layout electronic schematic ddr2 ram chip DDR2 schematic

    2005 - K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING , Section A MEMORY AND STORAGE DDR SDRAM DDR SDRAM COMPONENTS Density 256M Org 64Mx4 , K4H561638F-GC(L)B3/CCC 60 ball FBGA Pb-free available 512M 128Mx4 266/333/400 K4H510438C-UC(L)B0/B3/CCC 66 pin TSOP Pb-free available 512M 128Mx4 266/333/400 K4H510438C-ZC(L)B0/B3/CCC 60 ball FBGA Pb-free 512M 64Mx8 266/333/400 K4H510838C-UC(L)B0/B3/CCC 66


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    2014 - AS4C32M16MD1

    Abstract: No abstract text available
    Text: AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) LPDDR MEMORY 512M (32Mx16bit) Confidential 1 Mobile DDR SDRAM Rev. 2.0/February 2014 AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb. /2014) Revision History , . 2.0/February 2014 AS4C32M16MD1 512M (32M x16 bit) Mobile DDR SDRAM Confidential (Rev. 2.0, Feb , Truth Table The DDR Mobile RAM recognizes the following commands specified by the CS#, RAS#, CAS#, WE


    Original     		PDF AS4C32M16MD1 32Mx16bit) 200MHz 400Mbps 512Mbit 16bits AS4C32M16MD1

    2009 - EDE2116ACBG

    Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
    Text: .7 10. DDR SDRAM , .8 12. DDR Mobile RAMTM - Barechip .9 13. DDR Mobile RAMTM - JEDEC Standard ( 14. DDR Mobile RAMTM -FBGA , -E 1.5+/-0.075 8K/64ms 30.5/1.20 2Gbit(x4) (1G-A DDP) 36 4GB 512M x 72 2 PC3


    Original     		PDF E1454E90 240-pin M01E0706 EDE2116ACBG EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG

    RS600ME

    Abstract: RC410M AR2413 ATI RC410M AD-9019S rs600me sb600 T5500 yonah BA59-01966A T2250
    Text: ) 8ms Typ.700 300cd/m2 SXGA (1280 x 1024) Only 1700g RAM Type MEM Extension LCD Panel LCD Size LCD , Non-Glare / Glare Intel Yonah Core ATI RC410M DDR II 2 SODIMM 10/100, Atheros 802.11b/g Optional : Modem , DDR II 2 SODIMM 10/100, 802.11b/g (Option) Modem (Option) Int. Gfx. / Ext. Gfx. SATA2 (3.5"for DT , 1105-001686 1105-001684 1105-001728 1105-001687 512M (SEC) 512M (IN) 1GB(SEC) 512M (SEC) 512M (IN) 1GB(SEC) 1GB


    Original     		PDF 800MHz RS600ME SB600 256MB, 512MB, 300mm 336mm 300cd/m2 M470T6554CZ3-CD5 533Mhz RC410M AR2413 ATI RC410M AD-9019S rs600me sb600 T5500 yonah BA59-01966A T2250

    2009 - IS23SC55160

    Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
    Text: 8K 200,166 8Mx32 DDR IS43R32800B 2.5V 4K 200,166 512M 64Mx8 DDR IS43R86400D 2.5V 8K 200,166 , RAM 3.3V EDO and Fast Page Mode DRAM Den Org Type Part No. Vcc 16M 4Mx4 EDO IS41LV44002B 3.3V , Comment (3) KGD available 166,143,133 TSOP2(86), BGA(90) Prod 512M 64Mx8 SDR IS42S86400B 3.3V , . 2009 www.issi.com Product Selector Guide 408-969-6600 7 Dynamic RAM (Cont'd , IS42SM32800D 3.3V 4K 8Mx32 LPSDR IS42RM32800D 2.5V 4K 8Mx32 LPSDR IS42VM32800D 1.8V 4K 512M 16Mx32


    Original     		PDF

    2008 - is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: 512M 32Mx16 DDR IS43R16320B 2.5V 8K 200,166 Pkg (#Pins) TSOP2(66) BGA(60) BGA(144) BGA(144 , 2008 408-969-6600 www.issi.com L Dynamic RAM 3.3V EDO and Fast Page Mode DRAM Den Org , NR NR Prod NR NR Prod NR NR Prod NR Prod NR Prod NR Prod Comment 512M 64Mx8 SDR , November 2008 www.issi.com Product Selector Guide 408-969-6600 7 Dynamic RAM (Cont'd , LPSDR IS42VM32800D 1.8V 4K 133, 100 TSOP2(86),BGA(90) S=NOW 512M 32Mx16 LPSDR IS42SM16320B 3.3V 8K


    Original     		PDF

    2011 - K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: €¢ DDR3 SDRAM • DDR2 SDRAM • DDR SDRAM • SDRAM • Mobile DRAM • Graphics DDR SDRAM â , €¢ Asychronous • Synchronous • NtRAM™ • Late-Write RR SRAM • DDR Synchronous SRAM • QDR , ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now , Now M393B1K70CH0-C(F8/H9/K0)(04/05) 2Gb ( 512M x4) * 36 Lead Free & Halogen Free 1066/1333


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    2001 - DDR RAM 512M

    Abstract: No abstract text available
    Text: CAMContent-Addressable Memory RAM CAM RAM IP CAM RAM Quartus II CAM RAM 4 CAM RAM APEX CAM RAM IP 192.25.27.28 09 09 High IP 192.25.22.xxx 0A 0A , Queuing WRR(Weighted Round-Robin) WFQ Excalibur TM ARM MIPS-basedTM 512M , RISC MIPS ARM SDRAM DDR QoS ISP Excalibur QoS PLD ASIC NRE QoS ASIC


    Original     		PDF M-WP-EXCQOS-01/JP DDR RAM 512M

    2012 - IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: 32Mx8 16Mx16 16Mx16 8Mx32 8Mx32 512M 64Mx8 32Mx16 16Mx32 DDR DDR DDR DDR DDR DDR DDR DDR DDR DDR , (Cont'd) 32M 64M 128M 256M 512M 1.8V Mobile DDR (Double Data Rate) Synchronous Automotive DRAM , IS66WVE4M16BLL *Contact SRAM Marketing for questions Cellular RAM Den 16M 32M 64M Org Part No , Technology, Inc. Dynamic RAM 3.3V EDO and Fast Page Mode DRAM Den Org Type Part No. Vcc 4M 256Kx16EDO , www.issi.com Dynamic RAM (Cont'd) 3.3V SDR (Single Data Rate) Synchronous DRAM DenOrg Type Part No. Vcc


    Original     		PDF i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168

    2010 - K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: /semi/sram · Asychronous · Synchronous · NtRAMTM · Late-Write R-R SRAM · DDR / II / II+ SRAM · QDR , Internal DVD · Internal COMBO DRAM · Graphics DDR SDRAM · DRAM Ordering Information Pages 24-27 , DDR2 SDRAM · DDR SDRAM · SDRAM · Mobile SDRAM · RDRAM Pages 4-13 DDR3 SDRAM REGISTERED , M393B5270CH0-C(F8/H9/K0*)(04/05) 2Gb ( 512M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now , 4 Now M393B1K70CH0-C(F8/H9/K0*)(04/05) 2Gb ( 512M x4) * 36 Lead Free & Halogen Free 1066


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: DDR SDRAM 5a ­ 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a ­13a NAND FLASH COMPONENTS, SMART MEDIA , M366S6453ETS-C7A00 M37456453ETS-C7A00 2 1 2 2 512M : (64Mx8)*16 128Mx72 PC133 512M : (64Mx8)*18 , 2004 Section MEMORY DRAM A DDR SDRAM COMPONENTS Density Org Speed (Mbps) Part , K4H561638F-GC(L)B0/A2/B3/CC 60 ball FBGA 512M 128Mx4 266/266/333 K4H510438B-TC(L)B0/A2/B3 66


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    2007 - K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM , SYNCHRONOUS SRAM SPB & FT SRAM NtRAM LATE-WRITE R-R SRAM DDR / II / II+ SRAM QDR / II / II+ SRAM , )*18 (128M x8)*18 st. ( 512M x4)*18 st. ( 512M x4)*18 Voltage:1.8V Package Lead-free Lead-free , (64M x8)*9 (64M x8)*18 (128M x4)*36 st. ( 512M x4)*18 st. ( 512M x4)*18 Module Height , . 3 MEMORY AND STORAGE DDR2 / DDR SDRAM DDR2 SDRAM UNBUFFERED MODULES Density 512MB 1GB


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    ...

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