DAX6 Search Results

deflection yoke

Abstract: specification yoke
Contextual Info: DEFLECTION YOKE Color Deflection Yoke For TV MODEL : DAX6837 FOR : 34" 110° 1/2 φ32.5 SPECIFICATION Horizontal Coil Vertical Coil Inductance 1.30 mH Resistance 1.16 Ω Inductance 18.00 mH Resistance 6.30 Ω at 20°C (at 20°C) Crosstalk Ratio -40.0 dB Max

deflection yoke

Abstract: CRT tv YOKE A80LJF30X specification yoke tv sanyo DAX6761 tv deflection coil
Contextual Info: DEFLECTION YOKE Color Deflection Yoke For TV MODEL : DAX6761 FOR : 34" 110° 1/2 φ29.1 SPECIFICATION Horizontal Coil Vertical Coil Inductance 0.96 mH Resistance 1.20 Ω Inductance 25.0 mH Resistance 9.9 Ω at 20°C (at 20°C) Crosstalk Ratio -40.0 dB Max

deflection yoke

Contextual Info: DEFLECTION YOKE Color Deflection Yoke For TV MODEL FOR : : DAX6773 33" 110° 1/1 φ29.1 SPECIFICATION Horizontal Coil Inductance 1.00 mH Resistance 1.28 Ω Inductance 25.00 mH Resistance 10.80 Ω Crosstalk Ratio -40.0 dB Max Maximum Misconvergence 2.0 mm

NT5SV8M16FS

Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
Contextual Info: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •

dax6

Abstract: Mobile SDRAM
Contextual Info: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

EM63A165TS-5G

Abstract: EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 EM63A165
Contextual Info: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture

V54C3128164VAT

Contextual Info: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

V54C3128

Contextual Info: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

Contextual Info: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns

V54C3128

Contextual Info: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

V54C3128

Contextual Info: V54C3128 16/80/40 4VC 128Mbit SDRAM 3.3 VOLT, TSOP II / BGA PACKAGE 8M X 16, 16M X 8, 32M X 4 5 6 7PC 7 10 System Frequency (fCK) 200 MHz 166 MHz 143 MHz 143 MHz 100 MHz Clock Cycle Time (tCK3) 5 ns 6 ns 7 ns 7 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

P-TSOPII-54

Abstract: caz smd PC133 registered reference design
Contextual Info: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10

54BALL

Abstract: V54C3128
Contextual Info: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

SMD MARKING T20

Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

NT56V6610C0T-8A

Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

P-TSOPII-54

Abstract: PC133 registered reference design
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)

marking code EY SMD

Abstract: PC100-222-620 P-TSOPII-54
Contextual Info: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN

Q 2 72 t5

Abstract: Q 72 t5 T436432B T436432B-55SG T436432B-5S T436432B-5SG
Contextual Info: tm TE CH T436432B SDRAM 512K x 32bit x 4Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION 2M x 32 SDRAM • • • • • 3.3V power supply Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns Internal four banks operation LVTTL compatible with multiplexed address