SPT03933 Search Results

P-TSOPII-54

Abstract: caz smd PC133 registered reference design
Contextual Info: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10

SMD MARKING T20

Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

P-TSOPII-54

Abstract: PC133 registered reference design
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)

marking code EY SMD

Abstract: PC100-222-620 P-TSOPII-54
Contextual Info: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN

HYB25L256160AC

Abstract: HYB25L256160AF HYE25L256160AF
Contextual Info: Data Sheet, Rev. 1.3, Nov 2004 HYB25L256160A[F/C] HYE25L256160AF 256MBit Mobile-RAM Mobile-RAM Commercial Temperature Range Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.

25L128

Abstract: PC133-333-522 PC100-222-620 25L128160 15p15
Contextual Info: HYB/E 25L128160AC 128-MBit Mobile-RAM 128-MBit Synchronous Low-Power DRAM in Chipsize Packages Datasheet Rev. 2003-02 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz tCK3,MIN 7.5 8 ns tAC3,MAX 5.4 6 ns tCK2,MIN

smd marking T22

Abstract: smd transistor marking ba 128M-BIT P-TSOPII-54 P-TSOP-54 PC133 registered reference design 128-MBIT
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)

25L256

Contextual Info: Data Sheet, Rev. 1.40, Aug. 2005 HY[B/E]25L256160AC HY[B/E]25L256160AF 256MBit Mobile-RAM Commercial Temperature Range Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

PC100-322-620

Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

T10-T12

Abstract: T11-T12 SPT03927
Contextual Info: HYB 39S64400/800/160AT L 64 MBit Synchronous DRAM Timing Diagrams 1 Bank Activate Command Cycle 2 Burst Read Operation 3 Read Interrupted by a Read 4 4.1 4.2 4.3 Read to Write Interval Read to Write Interval Minimum Read to Write Interval Non-Minimum Read to Write Interval

HYB25L256160AF

Abstract: HYE25L256160AF hye25l256160
Contextual Info: Data Sheet, Rev. 1.2, April 2004 HYB25L256160AF HYE25L256160AF 256MBit Mobi le- RAM Mobile-RAM Commercial Temperature Range E x t en d e d T e m p e r a t u r e R a n g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.

cbx smd code

Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

ISO 2768-mk

Abstract: PC100-222-620 HYB 39L128160AC-7.5
Contextual Info: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 12/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page

HYB25L256160AC

Abstract: DSA0016243
Contextual Info: Data Sheet, V1.1, April 2003 HYB25L256160AC 256-Mbit Mobile-RAM 2.5V V D D Memory Products N e v e r s t o p t h i n k i n g . HYB25L256160AC Revision History: 2003-04-16 V1.1 Previous Version: 2001-11-23 V1.0 Page Subjects major changes since last version

HYB 25L128160AC

Abstract: PC100-222-620 25L128160
Contextual Info: HYB/E 25L128160AC 128-MBit Mobile-RAM 128-MBit Synchronous Low-Power DRAM in Chipsize Packages Datasheet Rev. 12/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz tCK3,MIN 7.5 8 ns tAC3,MAX 5.4 6 ns tCK2,MIN

Contextual Info: HYB 39L256160AC 256-MBit 3.3V Mobile-RAM 256-MBit Synchronous Low-Power DRAM in Chipsize Packages Target Datasheet Rev. 09/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and

Contextual Info: HYB/E 25L256160AC 256-MBit Mobile-RAM 256-MBit Synchronous Low-Power DRAM in Chipsize Packages Target Datasheet Rev. 09.2/01 • Deep Power Down Mode High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz tCK3,MIN 7.5 8 ns tAC3,MAX 5.4 6 ns tCK2,MIN 9.5 9.5

Contextual Info: HYB 39L128160AC 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM in Chipsize Packages Preliminary Datasheet Rev. 09.2/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and

PC100-322-620

Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

PC133 registered reference design

Contextual Info: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns

P-TSOPII-54

Abstract: Q67100-Q1838 Q67100-Q2781
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

P-TSOPII-54

Contextual Info: HYB 39S128400/800/160DT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM Preliminary Target Specification 10.01 High Performance: • Multiple Burst Read with Single Write Operation -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz • Automatic and Controlled Precharge

tube az1

Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

PC100-222-620

Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8