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    D7828 Search Results

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    D7828 Price and Stock

    Analog Devices Inc

    Analog Devices Inc AD7828BQ

    CMOS CONVERTER IC
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    Analog Devices Inc AD7828BQ 4,908
    • 1 $93.60
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    • 100 $93.60
    • 1000 $51.08
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    Bristol Electronics AD7828BQ 4
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    Rochester Electronics AD7828BQ 22,367 1
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    • 1000 $45.98
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    ComSIT USA AD7828BQ 13
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    Richardson RFPD AD7828BQ 12
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    Analog Devices Inc AD7828KPZ

    CONVERTER IC
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    Analog Devices Inc AD7828KPZ 2,719
    • 1 $73.22
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    • 1000 $33.31
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    Rochester Electronics AD7828KPZ 6,115 1
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    TME AD7828KPZ 1
    • 1 $54.80
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    • 100 $40.60
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    Richardson RFPD AD7828KPZ 16
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    Analog Devices Inc AD7828KNZ

    CMOS CONVERTER IC
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    Analog Devices Inc AD7828KNZ 2,535
    • 1 $69.67
    • 10 $69.67
    • 100 $69.67
    • 1000 $34.43
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    Rochester Electronics AD7828KNZ 2,608 1
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    Richardson RFPD AD7828KNZ 13
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    Vyrian AD7828KNZ 8,062
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    Analog Devices Inc AD7828LPZ

    CONVERTER IC
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    Analog Devices Inc AD7828LPZ 1,239
    • 1 $80.91
    • 10 $80.91
    • 100 $80.91
    • 1000 $38.79
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    Rochester Electronics AD7828LPZ 2,246 1
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    • 100 $42.92
    • 1000 $38.40
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    Richardson RFPD AD7828LPZ 14
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    Vyrian AD7828LPZ 5,231
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    Analog Devices Inc AD7828BRZ

    CONVERTER I.C.
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    Analog Devices Inc AD7828BRZ 810
    • 1 $72.55
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    • 100 $72.55
    • 1000 $32.46
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    Richardson RFPD AD7828BRZ 27
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    Win Source Electronics AD7828BRZ 280
    • 1 $87.03
    • 10 $58.02
    • 100 $58.02
    • 1000 $58.02
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    D7828 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DJ05AH

    Abstract: TMOS power FET MTM10N25 Zener diode wz 210 MTP10N25 ITP10N Nippon capacitors
    Contextual Info: Order this document by MTM10N25/D MTM10N25 MTP10N25 Designer’s Data Sheet 10 AM PERE N-CHANNEL TM O S POWER FET N -C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R FIE LD EF F E C T T R A N S IS T O R rD S o n = 0.45 O H M


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    mtm10n25/dmtm10n25mtp10n25dj05ah+4tmos power fetzener diode wz 210itp10nnippon capacitors PDF

    MTD7N20

    Abstract: jw 521
    Contextual Info: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S


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    mtd7n20/dtd7n20mtd7n20jw 521 PDF

    MTP8P20

    Abstract: T-39-ZZ
    Contextual Info: MOTOROLA S C {XSTRS/R F> 5bE D L.3b75S4 QOTllOM 1 Order this data sheet by MTP8P20/D MOTOROLA c Designer's Data Sheet ea SEM IC O N D U C T O R tmti&a mitÉkm t - 3 ° i 'Z 3 TECHNICAL DATA MTP8P20 P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode


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    3b75s4mtp8p20/dmtp8p20t-39-zz PDF

    AO7121

    Abstract: 7824K AO71
    Contextual Info: ANALOG DEVICES LC2M0S High Speed 4- & 8-Channel 8-Bit ADCs □ AD7824/D7828 FEATURES 4- or 8-Analog Input Channels Built-In Track/H old Function 10 kHz Signal Handling on Each Channel Fast Microprocessor Interface Single +5 V Supply Low Power: 50 mW Fast Conversion Rate, 2.5 p.s/Channel


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    ad7824/ad78287824k7824lad7h24kq+57824c7824td7824uao7121ao71 PDF

    20P06

    Abstract: YLE relay relay yle TP20P06 mtp20p MC14001 motorola 20p
    Contextual Info: 6367254 MOTOROLA 96D X S T R S /R F SC Tb MOTOROLA D E p b 3h 7E S 4 r- 29~ ^ j 80096 ÜGßGCHb Order this data sheet by MTM20P06/D (□ SEMICONDUCTOR TECHNICAL DATA M T M 20P 06 M TP20P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancem ent-M ode


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    mtm20p06/dtp20p06mk145bpds-3782+9c50651mtm20p06mtp20p0620p06yle relayrelay ylemtp20pmc14001motorola 20p PDF

    60N40

    Abstract: 60N3S ST T4 0580 MO-040AA MTE50N50 D7828 WCLA MTE60N40 60n4 motorola 1046
    Contextual Info: MOTOROLA SC Î X S T R S / R F> b4 ]>Ejt:3b7aS4 GDtfina I 1 MOTOROLA T-39-15 SEMICONDUCTOR TECHNICAL DATA M TE50N45 M TE50N50 M TE60N35 M TE60N40 Designer's Data Sheet Pow er Field Effect Transistor IU-Channel Enhancem ent M ode Silicon G ate TMOS TMOS POWER FETs


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    t-39-15te50n45te50n50te60n35+14te60n40100/thd7828mte50n45mte50n50mte60n3560n4060n3sst t4 0580mo-040aawclamte60n4060n4motorola 1046 PDF

    MTP8P25

    Abstract: c3709 MTM8P25 AN569 SILICON SWITCHING DIODE MTM8P
    Contextual Info: Order this data sheet by MTM8P25/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 8P25 M TP8P25 Designer's Data Sheet Pow er Field Effect Transistors P-Channel Enhancem ent M ode Silico n Gate T M O S T M O S POW ER FETs 8 AM PERES rDS on = 2 O H M S 250 VO LTS


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    mtm8p25/dmtm8p25mtp8p25mk145bp+6c37095ds370c3709an569silicon switching diodemtm8p PDF

    20P06

    Abstract: MTP20P06 ROS 480 AN569 MTM20P06 diode RJ
    Contextual Info: Order this data sheet by MTM20P06/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 20P 06 M TP20P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancem ent-Mode Silico n Gate T M O S TMOS POWER FETs 20 AMPERES rDS on = 0.2 OHM 60 VOLTS These TM O S Power FETs are designed for high speed power


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    mtm20p06/dmtm20p06mtp20p06ds-3782+420p06ros 480an569diode rj PDF

    mte maxim

    Abstract: GM 950 motorola 40n60 transistor
    Contextual Info: nOTOKOLA SC -CXSTRS7R F> b4 D T | t,3 b 7 E S 4 □ D t.a n a - T - 'iy - iü a MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MTE40N55 MTE40N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high


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    mte40n55mte40n60hp202nfmte40im55+5lit30c3i755mte maximgm 950 motorola40n60 transistor PDF

    MTD1N45

    Contextual Info: MOTOROLA SC XSTRS/R F IME D I fc>3b?254 OdiOMOS T I O rder th is data sheet by MTD1N45/D T - ò f- n MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA iT Designer's Data Sheet ^ M TD 1N 45 M TD 1N 50 Pow er Field Effect Transistors N -C h ann el E n h a n c e m en t-M o d e


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    mtd1n45/dc64262mtd1n50mtd1n45 PDF

    60N40

    Abstract: GM 950 motorola MO-040AA 040-AA 60n3 Motorola b4 50N50 MTE50N45 MTE50N50 MTE60N35
    Contextual Info: MOTOROLA SC ÌXSTRS/R F> L4 DE~| b 3 t,72S4 O Dtfinfl r T MOTOROLA T-39-15 S E M IC O N D U C T O R TECHNICAL DATA M TE50N 45 M TE50N 50 M TE60N 35 MTE60IM40 Designer's Data Sheet P o w e r F ield E ffe c t T r a n s is t o r IM-Channel Enhancem ent M od e Silico n Gate T M O S


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    t-39-15mte50n45mte50n50mte60n35+11mte60im40mc14001100/thd782860n40gm 950 motorolamo-040aa040-aa60n3motorola b450n50 PDF

    MTP10N15L

    Abstract: MTM10N15L 10N15L MTM10N12L 10n15 MTP10N12L Motorola TMOS Power FET P-Channel
    Contextual Info: Order this data sheet by MTM10N12L/D MOTOROLA • I SEM ICONDUCTOR h h h h TECHNICAL DATA MTM10N12L MTM10N15L MTP10N12L MTP10N15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancem ent M od e Silico n Gate T M O S These Logic Level TMOS Power FETs are designed for high


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    mtm10n12l/dds3737mtp10n15lmtm10n15l+510n15lmtm10n12l10n15mtp10n12lmotorola tmos power fet p-channel PDF

    40n60 transistor

    Abstract: MTE40N60 40n60 40N60 snubber 72SM MTE40N55 belleville washer T-39-15 diode n55 H3677
    Contextual Info: n O T O K O L A SC -CXSTRS/R F > ~ b4 -T-'iy-lü D T | t . 3 b 7 2 S 4 DDtflllB Ö MOTOROLA SEMICONDUCTOR S É IS Â S lf TECHNICAL DATA Designer's Data Sheet M TE40N55 M TE40N60 If Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS


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    mte40n55mte40n60mq-040aahp202nf+10lit30c3i755h367740n60 transistor40n6040n60 snubber72smbelleville washert-39-15diode n55 PDF

    motorola TO-252 package IC

    Abstract: MTD5N10 fet to251 5S4 to-252
    Contextual Info: MOTOROLA SC XSTRS/R F IME D I b3b?2S4 O tm m ? Order this data sheet by MTD5N10/D b I MOTOROLA 3SEM IC O N D U C T O R TECHNICAL DATA MTD5N10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-Mode Silico n Gate T M O S


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    mtd5n10/dmtd5n10motorola to-252 package icfet to251+15s4 to-252 PDF