60N3 Search Results

Contextual Info: 60N35A9 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage3.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage4.0 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)25

60n3

Abstract: STD60N3LH5
Contextual Info: 60N3LH5 N-channel 30 V, 0.0072 Ω typ., 48 A STripFET V Power MOSFET in a DPAK package Datasheet - not recommended for new design Features Order code VDS @ Tjmax RDS on max 60N3LH5 TAB 35 V ID 0.008 Ω 48 A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on)

Contextual Info: 60N32N3LL Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT 5x6 asymmetrical double island, STripFET™ Power MOSFET Preliminary data Features Type 60N32N3LL VDSS RDS on ID Q1 30 V < 0.0095 Ω 13.6 A Q2 30 V < 0.0075 Ω 15 A • RDS(on) * Qg industry benchmark

60n3l

Abstract: STL60N3LLH5 MERIT INCH
Contextual Info: 60N3LLH5 N-channel 30 V, 0.0063 Ω, 17 A PowerFLAT 5x6 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID 60N3LLH5 30 V <0.0071 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

60n3l

Abstract: STD60N3LH5-H 60N3LH5 ISD24 60n3 ecopack2 60N3LH5 DPAK
Contextual Info: 60N3LH5-H N-channel 30 V, 0.0072 Ω, 48 A DPAK STripFET V Power MOSFET Features Type VDSS RDS on max ID 60N3LH5-H 30 V 0.008 Ω 48 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge

60n3l

Abstract: 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5
Contextual Info: 60N3LH5, 60N3LH5 60N3LH5, 60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features • ■ Order codes VDSS RDS on max ID 60N3LH5 30 V 0.008 Ω 48 A 60N3LH5 30 V 0.0084 Ω 48 A 60N3LH5

st marking code

Abstract: 60n32n3ll 60N32 STL60N32N3ll
Contextual Info: 60N32N3LL Dual N-channel 30 V, 0.006 Ω, 15 A PowerFLAT 5x6 asymmetrical double island, STripFET™ Power MOSFET Target specification Features Type 60N32N3LL VDSS RDS on ID Q1 30 V < 0.012 Ω 12 A Q2 30 V < 0.008 Ω 15 A • RDS(on) * Qg industry benchmark

60N40

Abstract: 60N3S ST T4 0580 MO-040AA MTE50N50 D7828 WCLA MTE60N40 60n4 motorola 1046
Contextual Info: MOTOROLA SC Î X S T R S / R F> b4 ]>Ejt:3b7aS4 GDtfina I 1 MOTOROLA T-39-15 SEMICONDUCTOR TECHNICAL DATA M TE50N45 M TE50N50 M 60N35 M TE60N40 Designer's Data Sheet Pow er Field Effect Transistor IU-Channel Enhancem ent M ode Silicon G ate TMOS TMOS POWER FETs

STL60N32N3LL

Contextual Info: 60N32N3LL Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT 5x6 asymmetrical double island, STripFET™ Power MOSFET Features Order code 60N32N3LL • VDSS Q1 Q2 RDS on ID 30 V < 0.0092 Ω 13.6 A 30 V < 0.0055 Ω 15 A 4 3 2 1 S1/D2 RDS(on) * Qg industry benchmark

N4111

Abstract: Sensick ds 60 Sensick ds 60 dtr ir Sensick Sensick Sensors DS 60 DtR IR Sensick Sensors distance sensor diamond grade reflective tape Sensick DS 50 P412
Contextual Info: DS 60 Distance sensors Distance sensors Proximity mode DS 60: The solution for large scanning distances Distance sensors Reflector mode During development of the DS 60, emphasis was placed on satisfying user requirements such as, compact design, two invertable

60N3LH5

Abstract: 60n3l STP60N3LH5 STU60N3LH5 STD60N3LH5 ISD24
Contextual Info: 60N3LH5 60N3LH5, 60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS on max ID 60N3LH5 30 V 0.008 Ω 48 A 60N3LH5 30 V 0.0084 Ω 48 A 60N3LH5 30 V 0.0084 Ω 48 A • RDS(on) * Qg industry benchmark

60n3l

Abstract: 60N3LH5 STD60N3LH5
Contextual Info: 60N3LH5 60N3LH5 N-channel 30V - 0.0072Ω - 48A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID 60N3LH5 30V 0.008Ω 48A 60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

sick DS 50

Abstract: DOS-1205-G BEF-WN-DS60 infrared power led 3w DOL-1205-G05M SICK distance sensor led SICK distance sensor gra101 DOL-1205-G10M 60-P41111-S03
Contextual Info: T E C H N I C A L D E S C R I P T I O N TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 1 DS 60 D i s t a n ce Sensor TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 2 DS 60 Distance Sensor Application Field The DS 60 distance sensors operate according to the principle of time of flight

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

60N40

Abstract: GM 950 motorola MO-040AA 040-AA 60n3 Motorola b4 50N50 MTE50N45 MTE50N50 MTE60N35
Contextual Info: MOTOROLA SC ÌXSTRS/R F> L4 DE~| b 3 t,72S4 O Dtfinfl r T MOTOROLA T-39-15 S E M IC O N D U C T O R TECHNICAL DATA M TE50N 45 M TE50N 50 M TE60N 35 MTE60IM40 Designer's Data Sheet P o w e r F ield E ffe c t T r a n s is t o r IM-Channel Enhancem ent M od e Silico n Gate T M O S

Sensick ds 60 dtr ir

Abstract: Sensick DS 50 Sensick ds 60 short distance measurement ir infrared diode diode catalogue 60N11 "infrared distance sensor" 2000 60-P41311 Sensick Sensors DS 60 DtR IR Sender DS
Contextual Info: Lichtschranken Lichtschranken Baureihe Baureihe WL WL27-2 27-2 DS 60 Distance sensors Distance sensors Proximity mode Distance sensors Reflector mode DS 60: The solution for large scanning distances During development of the DS 60, emphasis was placed on satisfying user requirements such as,

n4111

Abstract: SICK distance sensor SICK m12 5 pins 60-P41111 WSG1-01 60-P31311 "IR distance Sensor" 60-P11121 60-P41311 N4121
Contextual Info: D i s t a n ce Sensor DS 60 T E C H N I C A L D E S C R I P T I O N Distance Sensor DS 60 Application Field The DS 60 distance sensors operate according to the principle of time of flight measurement. The compact sensor makes large and adjustable scanning distances possible with very precise distance detection.

60n3l

Abstract: 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK
Contextual Info: 60N3LH5 60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID 60N3LH5 30V 0.008Ω 48A 60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)