D45C3 TRANSISTOR Search Results

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D45C3 Silicon PNP Power Transistors DESCRIPTION • Low Saturation Voltage • Good Linearity of HFE • Fast Switching Speeds • Complement to Type D44C3

ge d45c8

Abstract: GE D45C5 transistor D44C6 5069 transistor 12C1 90-175 D40C7 TC 5068 D44C2 D44C3
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY 4 AMPERE Pt Tc - 25°C PNP W Vcio Min (V) D44C1 — 30.0 30 — D45C1 27.0 — 30 D44C2 — 30.0 30 — D45C2 27.0 -3 0 D44C3 — 30.0 30 NPN — D44C4 D45C3 27.0 -3 0 aou> -D45C4 Package Type Package Outline No. Silecifii:;ition

Contextual Info: HARRIS SEMICON» SECTOR SbE I> WM M3DEE71 GOMOfl2i4 7T1 H H A S D45C Series File Number 2352 7 =-3 3 - / 7 Silicon P-N-P Transistors Complementary to the D44C Series General-Purpose Types for Medium -Power Switching and Am plifier Applications Features: • Very low collector saturation voltago 1-0.5V typ. @ -3.0A I q ]

D45c3 TRANSISTOR

Abstract: D45CZ D45C1 D45C3 D45C2 D45C4 D43C1 D44C D45C D45C10
Contextual Info: D45C Series PNP POWER TRANSISTORS -30 - -80 VOLTS -4 AMP, 30 WATTS COMPLEMENTARY TO THE D44C SERIES The General Electric D45C is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies

Contextual Info: D45C Series File N um ber 2352 Silicon P-N-P Transistors Complementary to the D44C Series G en eral-P u rp o se T yp es fo r M e d iu m -P o w e r S w itchin g and A m p lifie r A p p licatio n s F e atu re s: • Very lo w c o lle c to r s a tu ra tio n voltage

B0415

Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
Contextual Info: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B

D44C4

Abstract: D45C4 D44C6 D44C5
Contextual Info: Power Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A N N N P P BD240B BD241 BD241A BD241B BD242 H te VcEOoi Ic V Ceo W) (A) (V) TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 2 2 2 2 2 45 60 80 45 60 15 15 15 15

d45c6 transistor

Abstract: GE D45C2 d44c3 GE D45C5 transistor D45C5 D45C2 ge d45c8 D45C9 D45C4 08/bup 3110 transistor
Contextual Info: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES GE Type NPN PNP D44C1 - - D45C1 D 44C 2 Pt T c = 25°C Max. W 311.0 30.0 V CEO Min. (V ) 30 - 30 h FE! 200 m A •c Cont. (A) @ IV, ¿.0 25 - 25 _ -¿.0 M in. M ax. hFE @ 1 V , 1A 30 4 .0 40 120 71)

d44c3

Abstract: GE D44C9 D44C6 D44C5 D45C4 e 229 IC-229 D44C1 D44C2 D44C4
Contextual Info: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES G E Type N PN PN P D44C1 - - D45C1 D44C3 - 311.0 30.0 V C EO Min. V 30 - 30 •c Cont. (A ) @ IV , ¿.0 -¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 25 _ 30 4.0 40 120 71) D45C2 30.0 -30

TIP290

Abstract: tip320 mje12007 D44C5 TIP62B TIP62 motorola tip29 d44c3 tip300 TIP29
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package S TY LE 1: PIN 1. CASE 221A-02 PLASTIC 2. 3. 4. BASE C O LLEC TO R E M ITTER C O LLEC TO R R esistive Sw itching lcCont V cE O (su s) Am ps Max Volts Min 0.5 1 2.5 3 3 NPN PNP Max Max <T PD (Case)

044H8

Abstract: D44C5 D43C8 D44C6
Contextual Info: , THOflSON/ D I S T R I B U T O R SflE D TCSK Bipolar Power Transistors General Purpose Continued v C E <sat)-V h FE T y p e N o. v CEO<s u s > v C E S (s u s ) V V Pt D 4 3 C FAM L Y ( p - n - p ) D43C1 D43C 2 D43C 3 D43C 4 D43C 5 D43C 6 D43C 7 D 43C 8

D45C5

Abstract: D45C11 D45C2 D45C6 D45C1 D45C9 D45C4 d45c6 transistor D45C3 D45c3 TRANSISTOR
Contextual Info: Silicon Power Pac ELECTRONIC INACTIO N- smmomm Transistors “ Color Molded” The General Electric D45C is a green, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

D44C5

Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
Contextual Info: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0

45C8

Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
Contextual Info: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0

PNP 2SD

Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

Motorola case 77

Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc

2SA1046

Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ