D40D Search Results

tab ic

Abstract: D40D1 D40D2 D40D3 D40D4 D40D5 D40D7 D41D1 D41D2 D41D4
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

D40D2

Abstract: D40D1 D40D7...8 D40D D40D4 D40D5 D40D7 D41D TO202AB
Contextual Info: D40D Series ru e i'íum uei -r~3Z>-oe 1-Ampere Silicon N-P-N Power Transistors Complementary to the D41D Series TERMINAL DESIGNATIONS Features: • High free-air power dissipation • Low collector saturation voltage 0.5V typ. @ 1,0A Iq • Excellent linearity

D40D2

Contextual Info: D40D Series File Number 2334 1-Ampere Silicon N-P-N Power Transistors Complementary to the D41D Series TERMINAL DESIGNATIONS Features: • • High free-air power dissipation Low collector saturation voltage 0.5V typ. I >1.0AIC • Excellent linearity •

Contextual Info: T 0 5t if l7 3 SÖE D TH O M SO N/ D I S T R I B U T O R 000S753 TCS< 371 Bipolar Power Transistors General Purpose continued V c E (s a t)-V hFE T yp e No. V c E O (s u s ) V C E S ( SUS) V V - D 40D FAMI1.Y (n -p -n ) D40D1 D40D2 D40D4 D40D5 D40D7 D40D8

D41D2

Abstract: D41D7.8 D41D1 D41D4 D41D5 D40D D41D D41D7
Contextual Info: D41D Series PHP POWER TRANSISTORS - 3 0 -6 0 V O L T S -1 AM P, 6.25 W ATTS COMPLEMENTARY TO THE D40D SERIES The G eneral E le ctric D41D is a pow er transistor designed for various sp e cific and general purpose applications, su ch as: output and driver stages of am plifiers operating at frequencies

D41D8

Abstract: D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D D41D4 D40D2
Contextual Info: SILICON POWER T R A N S I S T O R S COMPLEMENTARY - 1 AMPERE Pt T c = 25°C v CEO Min. GE Type NPN PNP W h FE •c (V ) Cont. <A) hF E @ 2V , 100mA @ 2V , 1A Min. Max. M in. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D 40 D 2 - 6.25 30 1.0

D4001

Abstract: 14007 D40D7...8 D40D D40D1 D40D2 D40D4 D40D5 D40D7 D41D
Contextual Info: NPN POWER TRANSISTORS D40D Series 30 - 60 VOLTS 1 AMP, 6.25 WATTS COMPLEMENTARY TO THE D41D SERIES The General Electric D40D is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies

D41D2

Contextual Info: HARRIS SEMICON» SECTOR 5bE D • H3ÜB271 00M077S 272 H H A S File Number 2338 D 4 1 D S6TÍ68 1 = 3 3 -/ 7 1-Ampere Silicon P-N-P Power Transistors Complementary to the D40D Series TERMINAL DESIGNATIONS Features: High free-air power dissipation • Low collector saturation voltage I-0.5V typ. @ -1A Iq ,

TO202AB

Abstract: TO-202AB
Contextual Info: D41D Series File Number 2338 1-Ampere Silicon P-N-P Power Transistors Complementary to the D40D Series TERMINAL DESIGNATIONS Features: High free-air power dissipation • Low collector saturation voltage I-0.5V typ. @ -1A I q • Excellent linearity •

D40D5

Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

Contextual Info: P ow er Transistors HARRI S S E M I C O N D S E CT OR D40D Series 27E D • M302271 GQ2G27b 3 ■¡HAS • File Number 15.2 " 1 3 3 -0 5 - 1-Ampere Silicon N-P-N Power Transistors Com plem entary to the D41D Series TERMINAL DESIGNATIONS Features: • High free-alr power dissipation

2N6591

Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120

harris transistors

Abstract: D40D1 D0407 D40-D
Contextual Info: HARRIS SEMICOND SECTOR SbE D • 43G2271 00407bM 4^7 « H A S D40D Series File Number 2334 -V-33-Oe 1-Ampere Silicon N-P-N Power Transistors Complementary to the D41D Series Features: • High free-alr power dissipation • Low collector saturation voltage 0.5V typ. @ 1.0A Iq

D40E5

Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

D40D8

Abstract: D40D1 D40D5 d40d7 D40D11 NPN power transistor D40D5 D40D3 D40D4 d40d2
Contextual Info: D40D1 D40D2 D40D3 D40D4 D40D5 D40D11 D40D7 D40D13 D40D8 D40D14 D40D10 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D40D series types are NPN silicon power transistors designed for amplifier and switching applications. The PNP complementary

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160040B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256-GRAY SCALE DESCRIPTION The µPD160040B is a source driver for TFT-LCDs capable of dealing with displays with 256-gray scale. Data input is based on digital input configured as 8 bits by 6 dots (2 pixels), which can realize a full-color display of 16,777,216

603 transistor npn

Abstract: BT 316 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —

TO-202 transistor

Abstract: dissipator D40D8 T0202 transistor 1B transistor n y 1B transistor
Contextual Info: Free-standing heat dissipator and clip assembly • Beryllium copper clip is designed to pro­ vide high clamping pressure, which as­ sures low thermal resistance between dissipator and semiconductor, allowing a 150% power increase in natural con­ vection to more than 400% in forced air.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Vn39-Vn40

Abstract: Vp44-Vp43 VP37 vp44 vp35 vn19 X34221 VP43 VN11 vn48
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD16792 384 OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES DESCRIPTION The µPD16792 is a source driver for TFT-LCDs capable of dealing with displays with 256 gray scales. Data input is

c 2688 nec

Abstract: sumitomo bakelite 1084 V13-V12
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PD16732D

Abstract: D50-D55
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DR 6236

Abstract: D378 D4195 D384
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社