CY100E422 Search Results

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

CY10E422L-5KMB

Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
Contextual Info: _ CY10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA

CY7C2901

Contextual Info: ÌB Ìcy p ress • Table 10. Die Sizes of Cypress Devices continued P a rt N um ber Size (mil2) P a rt N um ber Size (mil2) ECL Logic CY 2909A 7968 CY100E301L 14875 CY2910A 21750 CY100E302L 14875 CY2911A 7968 CY100E422 6960 11800 CY100E474 10830 CY7C510

Contextual Info: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion

Contextual Info: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The

TR10E

Abstract: CY100E422L5DC C4221
Contextual Info: CY10E422 CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA

Contextual Info: CYPRESS SEMICONDUCTOR b5E T> 2 5 0 ^ 2 QQ1Q7T2 CYP CY7B991 CY7B992 PRELIMINARY CYPRESS SEMICONDUCTOR TÔ2 P rogram m ab le Skew C lock B u ffer P S C B Functional Description • Output pair skew <100 ps typical (250 max.) • All outputs skew <250 ps typical

PALC22V10B-20KMB

Abstract: PALC22V10B-20WMB PALC22V10B20WMB palc22v10b-15hc V103-6 ecl pal 16 macrocells PALC22V10B palc22v10b-15jc cypress 22V10b PALC22V10B-15KMB
Contextual Info: CYPRESS SEMI CONDUCTOR b£E T> SS f i T b b E QG1D3Ô3 2Mb CYP PALC22V10B CYPRESS SEMICONDUCTOR • Advanced second generation PAL ar­ chitecture • Low power — 90 m A max. standard — 100 mA max. military • CMOS EPROM technology for repro­ grammability

CY10E301

Abstract: 7C245A CY7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board
Contextual Info: CYPRESS SEMI CONDUCTOR bSE J> 2Sf i ^t . bS 0010171 7bE CY7C245A r^ Y p p irc c ; Reprogrammable 2K x 8 Registered PROM SEMICONDUCTOR • SV ±10% V cci commercial and military Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed

IDT7201

Abstract: IDT7202 linear array 512 MTBF 421A1
Contextual Info: CYPRESS SEMICONDUCTOR bSE ]> • ESflTLbS OOlQbM'i ÖEO CY7C421A CY7C425A PRELIMINARY CYPRESS SEMICONDUCTOR High-Speed Cascadable 51 2 x 9 FIFO IK X 9 FIFO • TI L compatible • Three-state outputs • Pin compatible and functional equivalent to IDT7201 and IDT7202

CLCC 64 pins footprint

Abstract: eprom mtbf CY10E474 64 CERAMIC LEADLESS CHIP CARRIER LCC CY10E301
Contextual Info: CY7C285 CYPRESS SEMICONDUCTOR 64K x 8 Reprogrammable Fast Column Access PROM Features Functional Description • CMOS for optimum speed/power T h e CY7C285 is a high-perform ance 65,536 by 8 -bit C M O S P R O M . It is avail­ able in a 28-pin 300-mil package and fe a ­

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

DIC20

Abstract: CY10E422L-5DMB
Contextual Info: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the

238Q

Abstract: 7C371-66 7C371-83 CY7C371 CY7C372 FLASH370 319q CLCC 64 pins footprint
Contextual Info: CYPRESS bSE SEMICONDUCTOR D ESSTbbS 0010S3Ö CY7C371 PRELIMINARY CYPRESS SEMICONDUCTOR Ob4 32-Macrocell Flash PLD Features Functional Description • 32 macrocells in two logic blocks • 32 I/O pins • 6 dedicated inputs including 2 clock pins • No hidden delays