CY10E422 Search Results

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

TR10E

Abstract: CY100E422L5DC C4221
Contextual Info: CY10E422 _CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

DIC20

Abstract: CY10E422L-5DMB
Contextual Info: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power

CY10E422L-5KMB

Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
Contextual Info: _ CY10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA

Contextual Info: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion

Contextual Info: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

IR 10e

Contextual Info: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the

CY7C2901

Contextual Info: ÌB Ìcy p ress • Table 10. Die Sizes of Cypress Devices continued P a rt N um ber Size (mil2) P a rt N um ber Size (mil2) ECL Logic CY 2909A 7968 CY100E301L 14875 CY2910A 21750 CY100E302L 14875 CY2911A 7968 CY100E422 6960 11800 CY100E474 10830 CY7C510

Gunn Diode symbol

Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
Contextual Info: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.