100E422 Search Results

Contextual Info: M^E D MATRA M H S „ Preview • 5ûbô4Sb = *^ = B ^ U 0005505 H S M=]5 ■ M M H S _ IIIÌM ÌIII January 1991 M 1 0 E 4 2 2 /M 1 0 0 E 4 2 2 DATA SHEET 256 x 4 ECL STATIC RAM FEATURES 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER

Contextual Info: ^ CY10E422 100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

Contextual Info: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The

kx-5t

Abstract: ZTE0
Contextual Info: bSE D • SSÖ'ibbS QGlüllH Features • Supports 50-MHz Pentium proces­ sor cache systems with zero wait states • 64K by 18 common I/O • Fast clock-to-output times — 12.5 ns with 0-pF load —■ 14 ns with 85-pF load • Two-bit w raparound counter support­

C2565

Abstract: eprom mtbf CERAMIC LEADLESS CHIP CARRIER CLCC 28 7C256 CY7C256 CLCC 64 pins footprint
Contextual Info: mm ^ Yp p p c;q y SEMICONDUCTOR Features CY7C256 PR ELIM IN AR Y =—" ' " - 32K x 8 PROM Power Switched and Reprogrammable • Capable o f w ithstanding > 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description

CY7C235-30PC

Abstract: 38-00003-E C235 CY7C235 C235 equivalent V11-P CY7C235-30DMB motorola 28pin smd control board CY7C235-30JC
Contextual Info: CYPRESS SEMICONDUCTOR bSE SSö^bbE J> QülülSb 45 b « C Y P CY7C235 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Highspeed — 25 ns max set-up — 12 ns clock to output • Low power — 495 mW commercial •— 660 mW (military) • Synchronous and asynchronous

ACT1020

Abstract: CY7C384-1GI CY7C383-1JC 48 pin clcc footprint 7c383 CY7C384 CLCC 64 pins footprint CY7C383-1GC O443 CLK503
Contextual Info: bSE D • ESSTbbS DQ1PSTS a2T ■ CYP CY7C383 CY7C384 PRELIMINARY CYPRESS SEMICONDUCTOR Features • Very high speed — Loadable counter frequencies greater th an 100 MHz —■Chip-to-chip operating frequencies up to 85 MHz — Input + logic cell + output delays

TR10E

Abstract: CY100E422L5DC C4221
Contextual Info: CY10E422 100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA

Contextual Info: CY7B1094 CY7B1095 CY7B1096 a. PRELIMINARY s s s r^ Y P P F C ;9 y SEMICONDUCTOR Features • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected

Contextual Info: CY10E422 100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

PALC22V10-25DMB

Abstract: cypress palc22v10 programming guide PALC22V10-25WMB ecl pal 16 macrocells V1010 PALC22V10L-25JC PALC22V10L-25PC
Contextual Info: »kV *’i * bSE J> m S S ö R b b S 0 0 1 D 3 7 3 3T7 « C Y P PALC22V10 - -g ' WCYPRESS ' SEMICONDUCTOR Features • Advanced second-generation PAL architecture • Low power — 55 mA max. “I!’ —-90 mA max. standard — 120 mA max. military • CMOS EPROM technology for

Contextual Info: CYPRESS SEMICONDUCTOR bSE D ESflTbbE ODIÜVÖT ADVANCED INFORMATION 3TÖ C Y 7C 915 H Y P P P C q IK x 42 S m a rtC A M SEMICONDUCTOR Features Functional Overview • 1024 x 42 fully associative processor T he CY7C915 SmartCAM is a high-performance associative processor. It consists

DIC20

Abstract: CY10E422L-5DMB
Contextual Info: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)

CY10E422L-5KMB

Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
Contextual Info: _ CY10E422 100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA

c225 diode smd

Abstract: CY7C225-40DC CY7C225 JTs smd diode
Contextual Info: bSE D CYPRESS SEMI CONDUCTOR CVP 5S ö ^ b b 2 c m i a m s CY7C225 CYPRESS SEMICONDUCTOR • Slim 300-mil, 24-pin plastic or her­ metic DIP, 28-pin LCC, or 28-pin PLCC • 5V ±10% V cc, commercial and military • TTL-compatible I/O • Direct replacement for bipolar

Contextual Info: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)

IR 10e

Contextual Info: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA

238Q

Abstract: 7C372-66 CY7C371 CY7C372 FLASH370 logic block diagram of cypress flash 370 device cypress FLASH370 device CY10E301 CLCC 64 pins footprint
Contextual Info: CYPRESS SEMICONDUCTOR bSE D • ESfiqbbS DDlOSMb 130 « C Y P CY7C372 PRELIMINARY CYPRESS SEMICONDUCTOR 64-Macrocell Flash PLD Features Functional Description • 64 macrocells in four logic blocks • 32 I/O pins • 6 dedicated inputs including 2 clock pins

MTL ICC 317

Abstract: CY7C433A IDT7203 IDT7204 CLCC 64 pins footprint
Contextual Info: CYPRESS SEMICO NDU CTOR bSE D • 5S0Tbb2 DQlDbSfl Ô33 ■ CYP CY7C429A PRELIMINARY _CY7C433A High-Speed Cascadable 2K x 9 FIFO 4K x 9 FIFO Features • 2,048 x 9 and 4,0% x 9 FIFO buffer memory • Dual-port RAM cell • TTL compatible • Three-state outputs

Contextual Info: CY10E422 100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion