CY7C225 Search Results

CY7C225A

Contextual Info: CY7C225A '= C Y P R E S S Features • CMOS for optimum speed/power • High speed — 18 ns address set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­ put enables • On-chip edge-triggered registers

c225a

Contextual Info: y7CYPRESS= ^ = = = = 1^ = CY7C225A 512 x 8 Registered PROM • Slim 300-m il, 24-pin p la stic or her­ m etic DIP, 28-pin LC C, o r 28-p in PLCC T h e m e m o ry cells u tiliz e p ro v e n E P R O M flo a tin g g a te tech n o lo g y a n d by te-w id e in ­

CY7C225A

Abstract: CY7C225A-25PC
Contextual Info: CY7C225A 512 x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed Functional Description — 25 ns address set-up The CY7C225A is a high-performance 512-word by 8-bit

c225a

Abstract: CY7C225A
Contextual Info: r= CY7C225A CYPRESS • Features • CMOS for optimum speed/power • High speed — 18 ns address set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­ put enables • On-chip edge-triggered registers

Contextual Info: CY7C225A 512 x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed Functional Description — 25 ns address set-up The CY7C225A is a high-performance 512-word by 8-bit

c225a

Abstract: CY7C225A C225A-1
Contextual Info: CY7C225A 512 x 8 Registered PROM D Features D D D D metic DIP, 28Ćpin LCC, or 28Ćpin CMOS for optimum speed/power Ċ Ċ Ċ Ċ PLCC D High speed 18 ns address setĆup Low power TTL Ćcompatible I/O Direct replacement for bipolar PROMs 495 mW commercial

Generic PROM Family

Abstract: sumitomo epoxy CY7C225A CY7C235A EME-6300H UL-94V0
Contextual Info: Qualification Report August 1993, CTP# 930305 Version 1.0 4K/8K PROM - PROM20 PROCESS FAMILY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C225A 512 x 8 Registered PROM CY7C235A 1024 x 8 Registered PROM CY7C281/2A 1024 x 8 PROM PRODUCT DESCRIPTION for qualification

Contextual Info: ÿi CY7C225A ~ 5 1 2 x 8 Registered PROM PRELIMINARY 7J= CYPRESS ^ SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 18 ns max set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­

cp1611

Abstract: CY7C225-30PC A723 es56
Contextual Info: CY7C225-30PC 1/2 IL00 * C-MOS 4 K (512 X 8)-BIT PROM WITH REGISTER -TOP VIEW- A7 IN 1 VDD 24 ( ) 23 +5V 1 A6 IN 2 23 A8 IN 2 3 A5 IN 3 22 PS A4 IN 4 21 E A3 IN 5 20 CLR IN 4 5 IN 6 7 IN 8 22 PS A8 D7 A7 D6 A6 D5 A5 D4 A4 D3 A3 D2 A2 D1 A1 D0 17

PS2120

Contextual Info: CY7C225A CYPRESS • Slim 300-m il, 24-pin p lastic or her­ m etic DIP, 28'p in LCC, or 28-pin PLCC T h e m e m o ry cells utilize p ro v en E P R O M flo a tin g g a te te ch n o lo g y an d byte-w ide in­ te llig en t p ro g ram m in g alg o rith m s.

Contextual Info: 25A CY7C225A 512 x 8 Registered PROM Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed — 25 ns address set-up Functional Description The CY7C225A is a high-performance 512-word by 8-bit

Contextual Info: _ CY7C225 CYPRESS _ SEMICONDUCTOR 512 x 8 Registered PROM Features • C M O S for optimum speed/pow er • Slim , 300 mil, 24 pin plastic or hermetic D IP , or 28 pin LCC floating gate technology and byte-wide intelligent program m ing algorithms.

CY7C225A

Contextual Info: 1CY 7C22 5A CY7C225A 512 x 8 Registered PROM Features • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power • Capable of withstanding greater than 2001V static • High speed discharge — 18 ns address set-up Functional Description

Contextual Info: CY7C225 CYPRESS SEMICONDUCTOR • Slim 300-mil, 24-pin plastic o r h e r­ m etic DIP, 28-pin LCC, o r 28-pin PLCC • C M O S for op tim u m speed/pow er • High speed — 25 n s m ax set-up — 12 ns clock to o u tp u t floating gate technology and byte-wide intelligentprogram m ingalgorithm s.

7c225a

Abstract: 962885-1
Contextual Info: CY7C225A PRELIMINARY CYPRESS = SEMICONDUCTOR Features • • CMOS for optimum speed/power • High speed — 18 ns max set-up 512 x 8 Registered PROM floating gate technology and byte-w ide in­ telligent program m ing algorithm s. Slim 300-m il, 24-pin plastic or her­

c225 diode smd

Abstract: CY7C225-40PC 88518 Programming CY7C225 CY7C225-25DC R1250 CY7C225-30LC
Contextual Info: r» 4bE D YPRESS SEMICONDUCTOR • ESA^bbE O O D k ? ^ □ ■ CYP "TM lö -13 CY7C225 ~Z7 r ^ v p p r 'c c 512 x 8 Registered PROM C M O S fo r o p tim u m speed/pow er • Slim 300-m il, 2 4-pin p lastic o r h e r­ m etic DIP, 2 8-pin LCC, o r 28-pin PL C C

Contextual Info: _ CY7C225 CYPRESS -= SEMICONDUCTOR 512 x 8 Registered PROM Features • CM O S for optimum speed/power • Slim, 300 mil, 24 pin plastic or hermetic D IP , or 28 pin LCC floating gate technology and byte-wide intelligent programming algorithms.

c225 diode smd

Abstract: CY7C225-40DC CY7C225 JTs smd diode
Contextual Info: bSE D CYPRESS SEMI CONDUCTOR CVP 5S ö ^ b b 2 c m i a m s CY7C225 CYPRESS SEMICONDUCTOR • Slim 300-mil, 24-pin plastic or her­ metic DIP, 28-pin LCC, or 28-pin PLCC • 5V ±10% V cc, commercial and military • TTL-compatible I/O • Direct replacement for bipolar

CY7C225A

Abstract: CY7C225A-18DC
Contextual Info: 25A CY7C225A 512 x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed — 18 ns address set-up Functional Description The CY7C225A is a high-performance 512 word by 8 bit electrically programmable read only memory packaged in a slim

c225 diode smd

Abstract: HA1111 7C225-35 88518 CY7C225
Contextual Info: CY7C225 CYPRESS SEMICONDUCTOR • • CMOS for optimum speed/power • High speed — 25 ns max set-up • Slim 300-mil, 24-pin plastic or her­ metic DIP, 28-pin LCC, or 28-pin PLCC floating gate technology and byte-w ide in­ telligent program m ing algorithm s.

88518

Abstract: 7C225
Contextual Info: CY7C225 CYPRESS SEMICONDUCTOR • • CM OS for optimum speed/power • High speed 12 • TTL-compatible I/O ns clock to output • Direct replacement for bipolar PR O M s • Low power — 495 mW commercial • Capable o f w ithstanding greater than 1500V static discharge

Contextual Info: _ CY7C225 r # ' SEMICONDUCTOR 512 x 8 Registered PR O M Features • CMOS for optimum speed/power • Slim, 300 mil, 24 pin plastic or hermetic DIP, or 28 pin LCC floating gate technology an d byte-w ide intelligent program m ing algorithm s.

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred