30LMB Search Results

247Q

Abstract: PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8 PALC20
Contextual Info: PAL C20 Series CYPRESS Features • • CMOS EPROM technology for repro­ grammability • High performance at quarter power Reprogrammable CMOS PALC 16L8,16R8, 16R6, 16R4 High reliability — Proven EPROM technology — > 1500V input protection from electrostatic discharge

CY7C225A

Contextual Info: CY7C225A '= C Y P R E S S Features • CMOS for optimum speed/power • High speed — 18 ns address set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­ put enables • On-chip edge-triggered registers

L496D

Abstract: 9l reset CY7C331 ST L11922 0423-J
Contextual Info: CY7C331 -W C Y P R E S S Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,

16L88

Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
Contextual Info: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military

Contextual Info: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs

Contextual Info: Asynchronous Registered EPLD 13 inputs, 12 feedback VO pins, plus 6 shared I/O macrocell feedbacks for a total of 31 true and complementary inpnts High speed: 20 ns maximum tpo Security bit Space-saving 28-pin slim-line DIP package; also available in 28-pin

20G10-25

Abstract: 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108
Contextual Info: PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Fully AC and DC tested

7c331-35

Contextual Info: s :^é= , CY7C331 •jS QYPRESS -■ W SEMICONDUCTOR Asynchronous Registered EPLD Features • TVelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,

transistor c331

Abstract: c331 transistor C3318 C3317 C331 C3311 C331 datasheet CY7C331 20HC c331 equivalent
Contextual Info: CY7C331 Asynchronous Registered EPLD Features • Low power — 90 mA typical ICC quiescent • Twelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — 180 mA ICC maximum — UV-erasable and reprogrammable — One feedback flip-flop with input coming from the

AC-231

Contextual Info: CY7B201 PRELIMINARY s CYPRESS . r SEMICONDUCTOR Reprogrammable 128K x 8 Power-Down PROM Features Functional Description • BiFAMOS for optimum speed/ power The CY7B201 is a high-performance 1-megabit BiFAMOS PROM organized in 128 Kbytes. It is available in 32-pin,

Contextual Info: CY7B210 PRELIMINARY CYPRESS SEMICONDUCTOR Features Product Characteristics • BiFAMOS for optimum speed/ power • Highspeed — *a a = 25 ns max. commercial The CY7B210 is a high-performance 1-megabit BiFAMOS PROM organized in 64K words by 16 bits wide. It is available in

Contextual Info: P4C1298/P4C1298L, P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS FEATURES • High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military) Output Enable and Chip Enable Control Functions - Single Chip Enable P4C1298

CY7C429-25PC

Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7
Contextual Info: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs

12L10

Abstract: 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000
Contextual Info: PLDC20G10B PLDC20G10 USE ULTRA37000 FOR ALL NEW DESIGNS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Military: tPD = 20 ns, tCO = 15 ns, tS = 15 ns

20G10

Abstract: 20G10B-20 12L10 16L6 18L4 20L10 20L8
Contextual Info: fax id: 6014 1P LDC20 G1 0B/P LD C20 G1 0 PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns

Contextual Info: PERFORMANCE SEMICONDUCTOR EOE D • 70L25T7 0D0QS71 S P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CM O S RAM S SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -15/17/20/25/30/35 ns (Commercial)

1549T

Abstract: EI96
Contextual Info: PERFORMANCE SE MI CO NDU CTOR EOE D • TObEST? O O O D m T P4C1282/P4C1282L, P4C1281 /P4C1281L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 2 PIFSEUMO A -

ERF 2030

Abstract: ERF 2030 mos fet c455 CY7C455 CY7C456 CY7C457 CY7C447 c4556 C4557
Contextual Info: / u h *f o . iviu i l u a y , w w i u u t i r p , 1 Revision: Tuesday, December 14,1993 C Y 7C 455 C Y 7C 456 C Y 7C 457 = = ^ C Y PR K SS p r e l im in a r y 512x18, lK x 18, and 2 K x l8 Cascadable Clocked FIFOs with Programmable Flags Features Functional Description

C2021 m

Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
Contextual Info: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power

P4C1258

Abstract: O513
Contextual Info: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs

B 503 Potentiometers

Abstract: cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204
Contextual Info: CY7C419/21/25/29/33 r* CYPRESS Features • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent o f depth/width • Low operating power — I c c i = 35 mA

IC ccu 2030

Contextual Info: CY7C441 CY7C443 PRELIM INARY CYPRESS .-F ' SEMICONDUCTOR Functional D escription 512 x 9 CY7C441 a n d 2,04« x 9 (CY7C443) F IF O b u ffer memory H igh-speed 70-M Hz o p eratio n S u p p o rts free-ru n n in g 50% duty cycle clock inputs Empty, A lm ost Em pty, a n d A lm ost

C3317

Abstract: L1190 CY7331
Contextual Info: Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coming from the I/O pin — Independent product term set, reset, and clock inputs on all

CY7C425-15JI

Abstract: 7C419
Contextual Info: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width