CY10E474 Search Results

10E474

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • 1024 x 4-bit organization • Ultra high speed/standard power — *AA = 3.5 ns • Open emitter output for ease of memory expansion • Industry-standard pinout

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

A301D

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin Features • 1024 x 4 ECL Static RAM 1024 x 4 -b it organization • Open em itter output for ease of memory expansion • Ultra high speed/standard power

c4744

Abstract: 10E474-5K 10E474
Contextual Info: CY10E474 CY100E474 CYPRESS : SEMICONDUCTOR • Features • 1024 x 4-bit organization • Ultra high speed/standard power — = 275 mA — I ce = 190 mA • Both 10KH/10K and 100K com patible I/O versions 10K/10KH M ilitary version • O n-chip voltage com pensation for

ALC113

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 1024 x 4-bit organization • Ultra high speed/standard power

Contextual Info: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA

CY100E474

Abstract: CY10E474 E474 10E474-5 CY10E474L-5DC
Contextual Info: CY10E474 CY100E474 IK x 4 ECL Static RAM SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 1024 x 4-bit organization • Ultra high speed/standard power

tc 89101 p

Contextual Info: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im­ proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s

kx-5t

Abstract: ZTE0
Contextual Info: bSE D • SSÖ'ibbS QGlüllH Features • Supports 50-MHz Pentium proces­ sor cache systems with zero wait states • 64K by 18 common I/O • Fast clock-to-output times — 12.5 ns with 0-pF load —■ 14 ns with 85-pF load • Two-bit w raparound counter support­

C2565

Abstract: eprom mtbf CERAMIC LEADLESS CHIP CARRIER CLCC 28 7C256 CY7C256 CLCC 64 pins footprint
Contextual Info: mm ^ Yp p p c;q y SEMICONDUCTOR Features CY7C256 PR ELIM IN AR Y =—" ' " - 32K x 8 PROM Power Switched and Reprogrammable • Capable o f w ithstanding > 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description

CY7C235-30PC

Abstract: 38-00003-E C235 CY7C235 C235 equivalent V11-P CY7C235-30DMB motorola 28pin smd control board CY7C235-30JC
Contextual Info: CYPRESS SEMICONDUCTOR bSE SSö^bbE J> QülülSb 45 b « C Y P CY7C235 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Highspeed — 25 ns max set-up — 12 ns clock to output • Low power — 495 mW commercial •— 660 mW (military) • Synchronous and asynchronous

ACT1020

Abstract: CY7C384-1GI CY7C383-1JC 48 pin clcc footprint 7c383 CY7C384 CLCC 64 pins footprint CY7C383-1GC O443 CLK503
Contextual Info: bSE D • ESSTbbS DQ1PSTS a2T ■ CYP CY7C383 CY7C384 PRELIMINARY CYPRESS SEMICONDUCTOR Features • Very high speed — Loadable counter frequencies greater th an 100 MHz —■Chip-to-chip operating frequencies up to 85 MHz — Input + logic cell + output delays

Contextual Info: CY7B1094 CY7B1095 CY7B1096 a. PRELIMINARY s s s r^ Y P P F C ;9 y SEMICONDUCTOR Features • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected

Contextual Info: CYPRESS SEMICONDUCTOR b5E T> 2 5 0 ^ 2 QQ1Q7T2 CYP CY7B991 CY7B992 PRELIMINARY CYPRESS SEMICONDUCTOR TÔ2 P rogram m ab le Skew C lock B u ffer P S C B Functional Description • Output pair skew <100 ps typical (250 max.) • All outputs skew <250 ps typical

CY10E301

Abstract: 7C245A CY7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board
Contextual Info: CYPRESS SEMI CONDUCTOR bSE J> 2Sf i ^t . bS 0010171 7bE CY7C245A r^ Y p p irc c ; Reprogrammable 2K x 8 Registered PROM SEMICONDUCTOR • SV ±10% V cci commercial and military Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed

IDT7201

Abstract: IDT7202 linear array 512 MTBF 421A1
Contextual Info: CYPRESS SEMICONDUCTOR bSE ]> • ESflTLbS OOlQbM'i ÖEO CY7C421A CY7C425A PRELIMINARY CYPRESS SEMICONDUCTOR High-Speed Cascadable 51 2 x 9 FIFO IK X 9 FIFO • TI L compatible • Three-state outputs • Pin compatible and functional equivalent to IDT7201 and IDT7202

CLCC 64 pins footprint

Abstract: eprom mtbf CY10E474 64 CERAMIC LEADLESS CHIP CARRIER LCC CY10E301
Contextual Info: CY7C285 CYPRESS SEMICONDUCTOR 64K x 8 Reprogrammable Fast Column Access PROM Features Functional Description • CMOS for optimum speed/power T h e CY7C285 is a high-perform ance 65,536 by 8 -bit C M O S P R O M . It is avail­ able in a 28-pin 300-mil package and fe a ­

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

PALC22V10-25DMB

Abstract: cypress palc22v10 programming guide PALC22V10-25WMB ecl pal 16 macrocells V1010 PALC22V10L-25JC PALC22V10L-25PC
Contextual Info: »kV *’i * bSE J> m S S ö R b b S 0 0 1 D 3 7 3 3T7 « C Y P PALC22V10 - -g ' WCYPRESS ' SEMICONDUCTOR Features • Advanced second-generation PAL architecture • Low power — 55 mA max. “I!’ —-90 mA max. standard — 120 mA max. military • CMOS EPROM technology for

Contextual Info: CYPRESS SEMICONDUCTOR bSE D ESflTbbE ODIÜVÖT ADVANCED INFORMATION 3TÖ C Y 7C 915 H Y P P P C q IK x 42 S m a rtC A M SEMICONDUCTOR Features Functional Overview • 1024 x 42 fully associative processor T he CY7C915 SmartCAM is a high-performance associative processor. It consists

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)

ersa 111

Contextual Info: CYPRESS SEMI CONDUCTOR bSE D • HSf l TbbS QQI QMOI *CYP PAL22V10CF PAL22VP10CF CYPRESS SEMICONDUCTOR • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 n s — fltfAX = 100 MHz — Drives SO-pF load C l

1001dl

Abstract: CKvv CY7B923 CY7B933 ECL100K CY10E301 air transmitter mtbf d17001 1001 dl 1001 ds
Contextual Info: CYPRESS SEMICONDUCTOR HSfl'ikbS 0 0 1 1 5 5 7 hSE D PRELIM INARY TTfi CYP CY7B923 CY7B933 {'•'’Y P P F ’CIC! SEMICONDUCTOR HOTLink Transmitter/Receiver Features Functional Description • • • • • • • • • • The CY7B923 HOTLink Transmitter and

c225 diode smd

Abstract: CY7C225-40DC CY7C225 JTs smd diode
Contextual Info: bSE D CYPRESS SEMI CONDUCTOR CVP 5S ö ^ b b 2 c m i a m s CY7C225 CYPRESS SEMICONDUCTOR • Slim 300-mil, 24-pin plastic or her­ metic DIP, 28-pin LCC, or 28-pin PLCC • 5V ±10% V cc, commercial and military • TTL-compatible I/O • Direct replacement for bipolar