100E474 Search Results

tc 89101 p

Contextual Info: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im­ proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s

1S334

Abstract: Matra Semiconductor
Contextual Info: 4 «= E D MATRA M H S Preview • S û b ê M S b G Ü Q 5 S 1 1 711 ■ MMHS _ E F ^ HIM IV T H B January 1991 M 1 0 E 4 7 4 /M 1 0 0 E 4 7 4 DATA SHEET 1 0 2 4 x 4 ECL STATIC RAM FEATURES 1024 x 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tAA = 3 ns, tAcs = 2 ns

Contextual Info: Preview September 1989 DATA SHEET M M 1 0 E 4 7 4 /M M 1 0 0 E 4 7 4 1024 x 4 ECL STATIC RAM FEATURES 1024 x 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tAA = 3 ns, tACS = 2 ns - 1ee = 275 mA LOW POWER VERSION - tAA = 5 ns - I e e = 190 mA BOTH 10 KH/10 K AND 100 K COMPATIBLE I/O

10E474

Contextual Info: CY10E474 100E474 CYPRESS SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • 1024 x 4-bit organization • Ultra high speed/standard power — *AA = 3.5 ns • Open emitter output for ease of memory expansion • Industry-standard pinout

Contextual Info: CY10E474 100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

A301D

Contextual Info: CY10E474 100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin Features • 1024 x 4 ECL Static RAM 1024 x 4 -b it organization • Open em itter output for ease of memory expansion • Ultra high speed/standard power

c4744

Abstract: 10E474-5K 10E474
Contextual Info: CY10E474 100E474 CYPRESS : SEMICONDUCTOR • Features • 1024 x 4-bit organization • Ultra high speed/standard power — = 275 mA — I ce = 190 mA • Both 10KH/10K and 100K com patible I/O versions 10K/10KH M ilitary version • O n-chip voltage com pensation for

ALC113

Contextual Info: CY10E474 100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 1024 x 4-bit organization • Ultra high speed/standard power

Contextual Info: CY10E474 100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA

CY100E474

Abstract: CY10E474 E474 10E474-5 CY10E474L-5DC
Contextual Info: CY10E474 100E474 IK x 4 ECL Static RAM SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 1024 x 4-bit organization • Ultra high speed/standard power