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    10E474I Search Results

    10E474I Datasheets Context Search

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    tc 89101 p

    Contextual Info: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im­ proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s


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    cy10e474cy100e4741024x410e474+610kh/10k100e47410e474l--5jc10e474l--7jc10e474l--7ktc 89101 p PDF

    Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version


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    cy10e474cy100e47410kh/10k-100k-compatible+210k/10khcy10e474l PDF

    c4744

    Abstract: 10E474-5K 10E474
    Contextual Info: CY10E474 CY100E474 CYPRESS : SEMICONDUCTOR • Features • 1024 x 4-bit organization • Ultra high speed/standard power — = 275 mA — I ce = 190 mA • Both 10KH/10K and 100K com patible I/O versions 10K/10KH M ilitary version • O n-chip voltage com pensation for


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    cy10e474cy100e47410kh/10k10k/10kh+9100e474100kcom10e474l-5jc10e474l-5k10e474i10e474l-5c474410e474-5k10e474 PDF

    Contextual Info: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA


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    cy10e474cy100e47410kh-/10k-bloccy10e474-5lc+3cy10e474-5yccy10e474-5kccy10e474i PDF