10E474I Search Results
10E474I Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
tc 89101 pContextual Info: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s |
OCR Scan |
cy10e474cy100e4741024x410e474+6 | |
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Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version |
OCR Scan |
cy10e474cy100e47410kh/10k-100k-compatible+2 | |
c4744
Abstract: 10E474-5K 10E474
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OCR Scan |
cy10e474cy100e47410kh/10k10k/10kh+9 | |
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Contextual Info: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA |
OCR Scan |
cy10e474cy100e47410kh-/10k-bloccy10e474-5lc+3 |