CLASS B POWER TRANSISTORS CURRENT GAIN Search Results

2N3632

Abstract: 2N3375 2N3373
Contextual Info: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN

TH430

Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

Arco 426

Contextual Info: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION

ssm2164

Abstract: sm2024 OP482 equivalent
Contextual Info: ANALOG DEVICES FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation Low Cost Quad Voltage Controlled Amplifier SSM2164 FUNCTIONAL BLOCK DIAGRAM

4431 8 PIN

Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Contextual Info: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431

2164 20 pin

Abstract: v 2164 m
Contextual Info: ANALOG ► DEVICES Low Cost Quad Voltage Controlled Amplifier SSM2164 FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain M atching U nity Gain Class A or AB Operation FUNCTIONAL BLOCK DIAGRAM

AD161/AD162

Abstract: AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127 OC201
Contextual Info: 'TaiïuX 51 Electronic Valves Z & I Aero Services Ltd London England 1972-73 Tra n sisto rs Continued Notes Type Constr O utline P,ot fa Vcbo hfm at i c Notes Price £ O C200 S/PNP R08 200mW 7 00 kcl2 -2 5 1 5 -6 0 1mA Low Gain G.P. 0.30 OC201 S/PNP R08 200mW

mmic

Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Contextual Info: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)

Contextual Info: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders

c 3927

Abstract: 2N3927 3927 2n3926 v8g0 mobile fm ic
Contextual Info: H • '» r» m / U f U S S 140 C o m m e rce D rive 6 l l f f Montgomeryville, PA 18936- ".h S iT e a V ^ ïô " N 3 9 2 6 /2 N 3 9 2 7 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS FREQUENCY VOLTAGE POWER OUT POW FR GAIN EFFICIENCY CLASS C TRANSISTORS

2SB1362

Abstract: 2SD2052
Contextual Info: Power Transistors 2SB1362 2SB1362 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • Very good linearity of DC current gain Fife • Wide area of safety operation (ASO) • High transition frequency (fr)

2SD1990

Abstract: IC003
Contextual Info: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5

2sd1070

Contextual Info: SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.5 W Min. @ 175 MHz IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

2N5590

Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
Contextual Info: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching

2SB1254

Abstract: 2SD1894 RB1000
Contextual Info: Power Transistors 2SD1894 2S D 1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 U n it .'m m 5 2max. ^3.2 . 15.5m ax. . • Features 6.9mm. *1 • Optimum for 60 W hi-fi output • High DC cu rre n t gain

Granberg

Contextual Info: SOLID STATE AMPLIER DESIGN USING RF MOSFET DEVICES by S.K. Leong polyfet rf devices MTT 1999 June 17th Anaheim Selection of Proper Device • Output Power / Gain / Bandwidth / Efficiency / Linearity / COST • Package type – Single Ended / Push Pull – Surface mount or screw in metal flange

IN4007 diode

Abstract: IN4007 RECTIFIER DIODE thyristor firing circuit IN4007 bridge rectifier ic dual thyristor Multivibrator scr pulse battery charger schematic preamp with bass treble circuit diagrams DIODE IN4007 thyristor battery charger 24v thyristor firing circuits
Contextual Info: Harris Semiconductor No. AN6048.1 Harris Intelligent Power April 1994 SOME APPLICATIONS OF A PROGRAMMABLE POWER SWITCH/AMPLIFIER Authors: L.R. Campbell and H.A. Wittlinger Circuit Description The CA3094 unique monolithic programmable power switch/ amplifier IC consists of a high-gain preamplifier driving a

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)

2SD2000

Contextual Info: Power Transistors 2SD2000 2SD2000 Silicon NPN Triple-Diffused Planar Type Power Switching • Features • • • • High speed sw itching Good linearity of DC cu rren t gain I Large collector pow er dissipation (Pc) “Full P ack” package for simplified m ounting on a heat sink w ith one

NJ 20 U1 W

Abstract: 2SB1250 2SD1890
Contextual Info: Power Transistors 2SD1890 2S D 1890 Silicon NPN Triple-Diffused Planar Darlington Type • Power Amplifier Complementary Pair with 2SB1250 Package Dimensions ■ Features • S w itchable for 25W hi-fi output • High DC current gain Iif e : 50 0 0 —30000

transistors 1UW

Abstract: 2SD2151
Contextual Info: Power Transistors 2SD2151 2SD2151 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching • Features • • • • Low collector-em itter saturation voltage VcEisatj Good linearity of DC current gain (hFt) High collector current (Ic) “Full Pack” package for simplified m ounting on a heat sink with one

Darlington pair IC high current

Abstract: 2SD1890 2SB1250 heat sink for TO220
Contextual Info: Power Transistors 2SD1890 2SD1890 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1250 U n i t : Him 4.4max. • Features • Switchable for 25W hi-fi output • High DC current gain Iife : 5000~30000