MMIC Search Results

Contextual Info: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —

mlp 836

Contextual Info: TQP4M3018 Preliminary data sheet Rev A SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

TQP4M3007

Contextual Info: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die

ieee802.11b

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

12M05019A73

Contextual Info: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description • TriQuint’s TQP4M3019 is a high power antenna switch in a single pole three throw SP3T configuration. The die utilizes TriQuint’s PHEMT MMIC

TQP4M3007

Contextual Info: TQP4M3007 Preliminary data sheet Rev0.2 SP3T High Power 2.7V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

12M05019A73

Contextual Info: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description pHEMT GaAs MMIC Die Excellent Cross-Modulation Performance 108 dBm Typ @Cellular 106 dBm@AWS

Contextual Info: Advance Product Information September 21, 2005 32 - 47 GHz Wide Band Driver Amplifier TGA4521 Key Features • • • • • • • • Product Description The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s

Contextual Info: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: PACIFIC M ONOLITHICS DATA S1-11=1=7 GALLIUM ARSENIDE SYSTEMS MODEL PM-AP0602 2-6 GHz MEDIUM-POWER MMIC AMPLIFIERS FEATURES 0.25W OUTPUT POWER 10 dB GAIN ON-CHIP GAIN CONTROL SINGLE SUPPLY VOLTAGE SMALL SIZE Pacific Monolithics medium-power amplifier chips are small, highly reliable and operate well within the

2745T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

PM2601

Abstract: Pacific Monolithics
Contextual Info: œ PACIFIC MONOLITHICS DATASHEET PM2601 50 - 2500 MHz SPDT GaAs MMIC Switch Features: • • • • Single Positive Bias + 3 to +5 Volt Supply Integral CMOS Driver Plastic SOIC Package The PM2601 is a SPDT reflective switch offering low insertion loss, high isolation and integral driver with a single CMOS

Contextual Info: MGA-31489 0.1W High Gain Driver Amplifier 1.5GHz ~ 3GHz Data Sheet Description Features Avago Technologies MGA-31489 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent

84-1LMI

Contextual Info: NKD-100-D 4 MILLIMETER-WAVE FREQUENCY DOUBLER MMIC 5GHz TO 24GHz Typical Applications • Narrow and Broadband Commercial and • Upconversion Stage used in MW Radio/ Optical Designs Military Radio Designs • Linear and Saturated Radio Applications GENERAL PURPOSE

Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

Contextual Info: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

Contextual Info: NJG1684ME2 HIGH POWER SP4T SWITCH GaAs MMIC • GENERAL DESCRIPTION The NJG1684ME2 is a GaAs SP4T switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1684ME2 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at

Contextual Info: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: BGA7017 30 MHz to 6000 MHz broadband gain block Rev. 3 — 30 October 2012 Objective data sheet 1. Product profile 1.1 General description The BGA7017 MMIC is a Darlington amplifier, available in a low-cost surface-mount package. It delivers 17 dBm output power at 1 dB gain compression and superior

Contextual Info: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses

MGA-633P8

Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of