2N4041
Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108
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SRK-2001
Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108
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2n28762n33752n35532n3632+142n37332n38662n39242n39262n39272n4012srk-2001srf transistorsrk2002srf-1001srf10022n4440solitron transistors2n5016
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MT59
Abstract: 2N4428 MT 59 2N4429 2N4430 THOMSON-CSF MICROWAVE TRANSISTORS MT-59
Contextual Info: S G S — T H OMS ON 05C D SOLID STATE MICROWAVE 2N4428 2N4430 THOMSONCSF COMPONENTS CORPORATION 2N4429 2N4431 Montgomeryville, PA 18936" 215 362-8500 • TW X 510-661-7299 .75 W/1 W/2,5 W/5 W, 28 V, UHF PO W ER T R A N S IS T O R DESCRIPTION: This family o f single chip silicon transistors was designed for reliable
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2n44282n44302n44292n4431+6400ma750mwmt59mt 59thomson-csf microwave transistorsmt-59
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2N4430
Abstract: OAC5807 OAC5808 OAC5809 OAC5811 QAC5810
Contextual Info: OPTEK TECHNOLOGY INC 4flE D bVTflSAO 0001 4D 3 Mfc.0 • OTK OPTEK Product Bulletin OAC5807 March 1990 T-03 -0 5 Extra Fast Recovery Rectifier Die OAC58Q7 - OAC5811 Series OAC5807-OAC5811 Series Dimensions In inches .068 ± .003 Die Thickness .010 ± .002
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2N4430
Abstract: OAC5802 OAC5803 OAC5804 OAC5805 OAC5806
Contextual Info: OPTEK T E C H NO LO GY INC i^asan 4SE D §>\ OPTEK anom ai • Product Bulletin OAC5802 March 1990 otk -T -o î-o iî Extra Fast Recovery Rectifier Die OAC58Q2 - OAC58Q6 Series Contact metallization for wire bond and surface mount package construction: Top Metal: Alloy Aluminum Anode)
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2N4430
Abstract: AC5000 OAC3000 OAC5000
Contextual Info: O PT E K TECHNOLOGY INC MñE D • LTTÔSÛÜ OOOmGS 23G ■ OTK fcHjOPTEK Product Bulletin OAC3000 V -X * “T *0 March 1990 3' Extra Fast Recovery Rectifier Die OAC3000/OAC5000 Series • Contact metallization for wire bond and surface mount package construction:
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2n28762n31372n33752n3553+162n36322n37332n39242n39262n39272n3948mrf660mrf485ktc1969mrf150mpmrf4962sc2029bmrf648mrf646mrf429mpmrf648 data sheet
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rf power transistors
Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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OPTEK INC
Abstract: 2N4430 OAC5807 OAC5808 OAC5809 OAC5810 OAC5811
Contextual Info: OPTEK TECHNOLOGY INC 4flE D tVTasaa D 0 Q m 0 3 Mb fi • OTK OPTEK Product Bulletin OAC5807 March 1990 T-OVO"S Extra Fast Recovery Rectifier Die OAC58Q7 - OAC5811 Series OAC5807-OAC5811 Series Dimensions In inches .068 ± .003 Die Thickness .010 ± .002 Features
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2N4431
Abstract: 2N4429 LC 117A 2N4430 4431 4431 8 PIN LC+117A SD1170 2N4430C TO-117a
Contextual Info: H JtS'nan'n* - * n ! IV I IC m S e m i P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive Montgomeryvme, PA 18936 Tel: 215 631-9840 2N4429 4431 RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES
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AC5000
Abstract: 2N4430 OAC3000 l718580
Contextual Info: OPTEK TECHNOLOGY INC MñE D • L^TúSflO 00014GS 230 ■ OTK fl>flOPTEK Product Bulletin OAC3000 March 1990 V -X * *T*0 3 ' 0 $ Extra Fast Recovery Rectifier Die OAC3Q00/OAC5000 Series • Contact metallization for wire bond and surface mount package construction:
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OAC6620
Abstract: OAC6621 OAC6622 OAC6623 OAC6624 OAC6625 OAC662Q
Contextual Info: OPTEK T E CH NO LO GY INC 4ÖE D • LVTñSflO Q0014D7 003 ■ OTK ggp u r i tu Product Bulletin OAC6620 March 1990 T -0 3 -0 5 Extra Fast Recovery Rectifier Die OAC662Q - OAC6625 Series • Contact metallization for wire bond and surface mount package construction:
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BFS98
Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw ing •c mA ■ b mA min. max. -1 5 0 -1 5 0
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2N4430
Abstract: OAC6620 OAC6621 OAC6622 OAC6623 OAC6624 OAC6625 D 042 silicon rectifier diode
Contextual Info: OPTEK TECHNOLOGY INC 4ÛE D • L7Tfl5flO G 0 D 1 4 G 7 00 3 ■ OTK u ritK Product Bulletin OAC6620 March 1990 _ T -03'05 Extra Fast Recovery Rectifier Die OAC662Q - OAC6625 Series • Contact metallization for wire bond and surface mount package construction:
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oac6620oac6625oac6620-oac66252n4430+5oac6621oac6622oac6623oac6624d 042 silicon rectifier diode
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tq-60
Contextual Info: xemitron semiconductors SemitronicsCorp. m discrete devices 4 0 ^ 5 4 1 , DDDQSTl 7 I r - 3 1 'ô l s ilic o n tr a n s is to rs I N T E X / SEMITRONICS CORP 27E D yH F/VH F power transistors Pwar Out e e P|E MHz (W) e v CE 65 65 65 65 40 40 40 40 4.0 4.0
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4431 8 PIN
Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Contextual Info: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431
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80 Amp current 100 volt diode
Contextual Info: OPTEK T E C H N O L O G Y INC 4flE D • bVTflSöD 0 0 0 1 S 5 3 T74 ■ OTK Product Bulletin OPTEK M ay 1989 Surface Mount Extra Fast Recovery Rectifiers Types HCR3400/HCR31000 Series 2 25 5 71 2 15 (5 46) * 061(1 55) .155(3.93) .1 4 5 3 68 ■ z % PIN 1 IN D E N T IF IE R
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2N4430
Abstract: OAC6626 OAC6627 OAC6628 OAC6629 OAC6631
Contextual Info: OPTEK TECHNOLOGY INC MAE D • t7iaSÛD 00014m Tôt, ■ OTK \ ^ n v / r I H-ix Product Bulletin OAC6626 March 1990 0 'S - 0 3 Extra Fast Recovery Rectifier Die OAC6626 - OAC6631 Series OAC6626-OAC6631 Series Dimensions In inches .068 ± .003 Die Thickness
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2N4858 TEXAS
Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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o-126o-126var2s85492s8527+152s85282s81217ksa9312n34682s87332n4858 texas2n4872siemens 5sn2n4433qualidyne2n4418transtek40391 rca2n4417api 560
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TO1C
Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Contextual Info: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65
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0TK7-03-0S
Abstract: 2N4430 OAC5615 OAC5617 OAC5619 OAC5621 OAC5623
Contextual Info: OPTEK TECHNOLOGY INC 4ÖE D • L.7TÖSÖ0 OOOIBTT 107 ■ OTK Ol OPTEK Product Bulletin OAC5615 March 1990 ''T '* 0 3 - O S ' Fast Recovery Rectifier Die OAC5615 - OAC5623 Series Features • Contact metallization for wire bond and surface mount package construction:
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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