C10P0 Search Results

c10p03

Contextual Info: SCHOTTKY BARRIER DIODE 11A/20~30V C10P02QL C10P03QL F10P02QL F10P03QL FEATU R ES °Similar to TO-220AB Case 0 Fully Molded Isolation F-Type • Extremely Low Forward Voltage Drop 0 Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency 0 High Surge Capability

F10P06Q

Contextual Info: SCHOTTKY BARRIER DIODE C10P05Q C10P06Q F10P05Q F10P06Q 11A / 50— 60V FEATURES °Similar to T0-220AB Case ° Fully Molded Isolation F-Type °Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0 High Surge Capability

Contextual Info: C10P05Q Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)98# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.110 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)5.0

F10P03QL

Abstract: C10P02QL C10P03QL F10P F10P02QL F10P03Q CF 331
Contextual Info: SCHOTTKY BARRIER DIODE C10P02QL C10P03QL F10P02QL F10P03QL 11A / 20~ 30V FEATURES ° Similar to TO-220AB Case ° Fully Molded Isolation F-Type » Extremely Low Forward Voltage Drop ° Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency “ High Surge Capability

F10P06Q

Abstract: C10P06Q C10P06 C10P05Q F10P05Q
Contextual Info: SCHOTTKY BARRIER DIODE C10P05Q C10P06Q F10P05Q F10P06Q 1 1 A / 5 0 — 60V FEATURES ° Similar to TO-220AB Case » Fully Molded Isolation F-Type • Dual Diodes - Cathode Common °Low Forward Voltage Drop • Low Power Loss, High Efficiency • High Surge Capability

F10P10Q

Abstract: C10P10Q F10P09Q C10P09Q QGD2042 f10p10
Contextual Info: SCHOTTKY BARRIER DIODE C10P09Q C10P10Q F10P09Q F10P10Q 11A/90— 100V FEA TUR ES ° Similar to T0-220AB Case Fully Molded Isolation F - T y p e ° Dual Diodes - Cathode Common ° L o w Forward Voltage Drop *>Low Power Loss , High Efficiency ° High Surge Capability

f10p04q

Abstract: C10P04Q jrm 45 C10P03Q F10P F10P03Q
Contextual Info: SCHOTTKY BARRIER DIODE C10P03Q C10P04Q F10P03Q F10P04Q 11A/30~40V FEA TU R E S o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0 L o w Forward Voltage Drop » L o w Power L o s s , High Efficiency o High Surge Capability

Contextual Info: C10P02QL Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)105# V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.120 V(FM) Max.(V) Forward Voltage470m @I(FM) (A) (Test Condition)5.0

F10P10Q

Contextual Info: SCHOTTKY BARRIER DIODE C10P09Q C10P10Q F10P09Q F10P10Q 11A/90—100V FEATURES ° Similar to TO-220AB Case Fully Molded Isolation F-Ty p e ° Dual Diodes - Cathode Common ° L o w Forward Voltage Drop • Lo w Power L o s s , High Efficiency • High Surge Capability

F10P03QL

Contextual Info: SCHOTTKY BARRIER DIODE 11A/20— 30V C10P02QL C10P03QL F10P02QL F10P03QL FEATURES ° Similar to T0-220AB Case 0 Fully Molded Isolation F-Type • Extremely Low Forward Voltage Drop » Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency 0 High Surge Capability

Contextual Info: SCHOTTKY BARRIER DIODE C10P05Q C10P06Q F10P05Q F10P06Q 11 A / 5 0 ~ 6 0 V 3 .1 12 2 MAX FEATURES 10.3C.405) 3 .4 U 3 4 )„ ,. MAX - 1 / S Ä lI S ) ° Similar to TO-220AB Case ° Fully Molded Isolation (F-Type) ° Dual Diodes - Cathode Common 0Low Forward Voltage Drop

F10P04Q

Abstract: C10P04Q C10P03Q
Contextual Info: SCHOTTKY BARRIER DIODE C10P03Q C10P04Q F10P03Q F10P04Q 11A/30— 40V FEATURES °Similar to T0-220AB Case °Fully Molded Isolation F-Type ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop » Low Power Loss, High Efficiency ° High Surge Capability

Contextual Info: C10P06Q Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)98# V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.110 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)5.0

Contextual Info: C10P04Q Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.120 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)5.0

F10P10Q

Abstract: C10P10Q
Contextual Info: SCHOTTKY BARRIER DIODE i i a /o o -io o v fm p io q FEATURES » Similar to TO-22ÛAB Case °Fully Molded Isolation F-Type ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability 0 20 Volts thru 100 Volts Types

K13U

Contextual Info: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. Q COPYRIGHT 19 m r , 199B BY AMP INCORPORATED.ALL RI GHT5 RE5ERVED. REVISIONS J -=»• D OWN APVD RELEASED F J 0 0 - 0 3 3 5 - 9 8 20/FEB/'98 T . K I .E REVISED

FC54M

Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Contextual Info: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: T H IS DRAWING IS C O P Y R IG H T R E L E A S E D FOR P U B L I C A T I O N UN PU BLISH ED . BY AMP 19 IN C O R P O R A T E D .A L L LOC 1338 + 0 .1 REVISIONS 3CJE J R IG H TS RESERVED. -o B DATE DWN APVD RELEASED F J O O - 0 2 1 3-98 12 / F E B / '9 8 T.K

FSF05B60

Abstract: FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q FCF20B60 f10p04q F5KF20B F10P06Q
Contextual Info: 旧製品・現行品対応表 Discontinued products and their replacements No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 旧製品 現行品 Discon. Replacement

C2371

Abstract: c2070 sc413 RX690 OZ826LN R5C833 c2279 KB910QF u12 c515 C2374
Contextual Info: 4 3 2 AMD S1 PROCESSOR 638-Pin uFCPGA 638 EXTERNAL CLOCK GENERATOR ICS951462 HyperTransport LINK0 22 UNBUFFERED DDR2 NEAR SODIMM 9,10 D 200-PIN DDR2 SODIMM IN DVT D 1 DDR II 400/533/667/800 5,6,7,8 OUT 5 16x16 UNBUFFERED DDR2 FAR SODIMM 9,10 2G BW ATI NB - RX690

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04