BVDSS Search Results

SF25N20D4

Contextual Info: SF25N20D4 PRODUCT DATA SHEET 200 VOLT, 25 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated Parameter Rating Units 200 35 V A 28 A BVDSS ID @ VGS = 10V, TC = 25°C Drain to Source Breakdown Voltage

vn10K

Contextual Info: 0ì Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / BVdgs ^DS ON ' d (on ) (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

Contextual Info: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

tn0604n2

Contextual Info: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3

TP06A

Contextual Info: TP06A ^ Supertex inc- Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV qgs ^DSfON If BVDSS/ max) V Order Number / Package g s (Ui ) (max) -60 V 3 .5 n -1.5A -2.4V -100V 3.5Î2 -1.5A -2.4V TO-39

TN07L

Contextual Info: ^ TN07L Supertex inc. L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R DS ON Id <ON) VGS<th) b v dgs (max) (min) (max) TO-92 DICE* 20V 1 .3 0 0.5A 1.0V TN 0702N3 TN 0702ND ^MIL visual screening a vailable

Contextual Info: Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSs I R BVdgs 120V q S ON Order Number / Package '« O N ) (max) (min) TO-92 6.0Q 1.0A VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □

Contextual Info: ^ Supertex inc. TP01L Low T h r e s h o ld P'Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BVdss ! BVdgs ^DS ON ^GS(th) ^D(ON) (max) (max) (min) TO-39 TO-92 TO-243AA* DICEt -20 V 4.0Î2

SD oid 3C

Abstract: VN0104N6
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) (max) (min) b v dgs TO-52 TO-92 Quad P-DIP* Diet 40V 3.0Î2 2.0A — VN0104N3 VN0104N6 — 60V 3.0Î2 2.0A

VN1310N3

Contextual Info: Gì Super tex inc. VN13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ Order Number / Package ^ D S O N ' d io n i (max) (min) TO-39 TO-92 40V 8Ì2 0.5A VN1304N2 VN1304N3 60V 8 ii 0.5A VN1306N2 VN1306N3

VN0355N5

Contextual Info: VN0355 VN0360 — N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-3 TO-220 Dicet 550V 6Q 1.5A VN0355N1 VN0355N5 VN0355ND 600V 6Q 1.5A VN0360N1 VN0360N5 VN0360ND 1" MIL visual screening available

VN0116N3

Abstract: Vn0116 VN01-1 VN0116N2 VN0120ND VN0120N2
Contextual Info: VN0116 VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-39 TO-92 TO-220 Dice+ 160V 10Q 0.4A VN0116N2 VN0116N3 VN0116N5 VN0116ND 200V

Contextual Info: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D

IRFC430

Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Contextual Info: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0

Contextual Info: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A

Contextual Info: V N 2406 V N 2410 /f ie . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices max 2 40 V 240V Order Number 1 Package o" R ds(on ) B V Dqs 5 z BVdss I 10Î1 (min) TO-39 TO-92 TO-220 1.0A V N 24 0 6 B V N 24 0 6 L

Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)

ID84

Abstract: 260uH LZP80N06P
Contextual Info: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools

VN2780

Contextual Info: VN2780 Advanced Information N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^D S O N ^D(ON) b v dgs (max) (min) SO-8 Dice 800V 16Q 500mA VN2780LG VN2780ND Features Advanced DMOS Technology □ Free from secondary breakdown

AP70T03GH

Abstract: AP70T03GJ 60V 60A TO-252 N-CHANNEL
Contextual Info: AP70T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS ON 9mΩ ID G ▼ RoHS Compliant BVDSS 60A S Description Advanced Power MOSFETs from APEC provide the

20n15gh

Abstract: ap20N15gh 20n15g AP20N15 TO252 rthjc TO-252 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Contextual Info: AP20N15GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 150V RDS ON 100mΩ ID G 20A S Description G Advanced Power MOSFETs from APEC provide the

AP60T10GS

Abstract: MOSFET VDS 20V TO-220
Contextual Info: AP60T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 23mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP4880BGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant D D D D S S 30V RDS ON 9mΩ ID G SO-8 BVDSS

6679GR

Contextual Info: AP6679GR RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description Advanced Power MOSFETs from APEC provide the