TP2510ND Search Results

Contextual Info: TP2510 Superte x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON VQS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

TP5A

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TP5A

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TP2510 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Sam e as SO T-89. Product supplied on 2000 piece carrier tape reels.

TO-243AA

Abstract: TP2510 TP2510N8 TP2510N8-G TP2510ND tp5a
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) -100V 3.5Ω -2.4V -1.5A Order Number / Package Die† TO-243AA* TP2510N8 TP2510ND TP2510N8-G * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TA 7136 p

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512

Contextual Info: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A

b0914

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

A110507

Abstract: tp5aw
Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

tp5aw

Abstract: TP2510 TP2510N8-G TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

p023 diode

Contextual Info: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*

tp5aw

Abstract: TP5A Most TP2510 TP2510N8-G TP2510ND
Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

tp5aw

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: LJ S u p e rte x TP25A m e . L o w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ' r Order Number / Package B V Ds s ! ^DS O N) V GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt -60V 3.5£i -2.4V -1.5A — TP2506ND

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

SW7 357

Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Contextual Info: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46