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    b0914

    Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


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    tp2510125pfdsfp-tp2510b091408+1b0914 PDF

    A110507

    Abstract: tp5aw
    Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    tp2510125pfo-243aaot-89+4o-243dsfp-tp2510a110507tp5aw PDF

    tp5aw

    Abstract: TP2510 TP2510N8-G TP2510ND
    Contextual Info: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    tp2510125pfo-243a082307+3tp5awtp2510n8-gtp2510nd PDF

    tp5aw

    Abstract: TP5A Most TP2510 TP2510N8-G TP2510ND
    Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    tp2510125pfdsfp-tp2510b022309+5tp5awtp5amosttp2510n8-gtp2510nd PDF

    tp5aw

    Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    tp2510125pfo-243aaot-89+4o-243dsfp-tp2510b122707tp5aw PDF

    Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original
    tp2510125pfdsfp-tp2510b022309 PDF

    Contextual Info: Supertex inc. TP2510 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    tp2510125pfdsfp-tp2510c081413 PDF