TP2510 Search Results

Contextual Info: TP2510 Superte x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON VQS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

b0914

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

TP5A

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TP5A

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TP2510

Contextual Info: TP2510 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2510 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TP2510 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Sam e as SO T-89. Product supplied on 2000 piece carrier tape reels.

A110507

Abstract: tp5aw
Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

tp5aw

Abstract: TP2510 TP2510N8-G TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

p023 diode

Contextual Info: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*

TO-243AA

Abstract: TP2510 TP2510N8 TP2510N8-G TP2510ND tp5a
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) -100V 3.5Ω -2.4V -1.5A Order Number / Package Die† TO-243AA* TP2510N8 TP2510ND TP2510N8-G * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TP2510

Contextual Info: Supertex inc. TP2510 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2510 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

tp5aw

Abstract: TP5A Most TP2510 TP2510N8-G TP2510ND
Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

TP2506

Abstract: TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND
Contextual Info: TP2506/TP2510 TP2506 TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Dice† -60V 3.5Ω -2.4V -1.5A — TP2506ND -100V 3.5Ω -2.4V

tp5aw

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: i£E D I t3b?as4 MOTORCLA MOTOROLA Goafiam 7 | SC X S T R S /R X 'S l F SEM IC O N D U C T O R TECHNICAL DATA TP2510 Advance Inform ation The RF Line U H F P o w e r T ra n sisto r 10 W — 470 M H z UHF PO W ER T R A N S IS T O R The TP2510 is d esigned for 12.5 V U H F amplifiers. Its construction which incorporates

TA 7136 p

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TP2510N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)150õ IDM Max (@25øC Amb)2.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: Supertex inc. TP2510 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown

Contextual Info: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

Contextual Info: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A

TOP marking KST

Abstract: TP2510
Contextual Info: XR T111 XTR111 SBOS375C – NOVEMBER 2006 – REVISED JUNE 2011 www.ti.com Precision Voltage-to-Current Converter/Transmitter Check for Samples: XTR111 FEATURES DESCRIPTION • The XTR111 is a precision voltage-to-current converter designed for the standard 0mA–20mA or