ABOVE25 Search Results

JFET J105

Contextual Info: Tem ic Sillconix _ J105/106/107 N-Channel JFETs Product Summary P a rt N um ber v GS<off Y) rnscon) M ax ( ß ) J105 -4 .5 to - 1 0 3 10 14 J106 - 2 to - 6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 toN iy p (ns) iD(off) ty P (PA) Features

ID84

Abstract: 260uH LZP80N06P
Contextual Info: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools

KHB3D0N90F1

Abstract: KHB3D0N90F2 KHB3D0N90P1 D 92 M - 02 DIODE
Contextual Info: SEMICONDUCTOR KHB3D0N90P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB3D0N90P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB9D0N50F1

Abstract: KHB9D0N50P1 HW150 ID9AJ
Contextual Info: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

7000K

Contextual Info: Technical Data Sheet Top View LEDs 61-238UMC/S3085/TR8/LT Features ․Super-luminosity chip LED. ․White SMT package. ․Lead frame package with individual 6 pins. ․Wide viewing angle. ․Soldering methods: IR reflow soldering. ․Pb-free. ․The product itself will remain within RoHS

Contextual Info: Generic Optoisoiator Specifications MCT2, MCT2E, MCT26 Optoisoiator GaAs Infrared Emitting Diode Phototransistor T h e MCT2, M CT2E a n d MCT26 are gallium arsen id e, in frared em itting dio d e coupled with a silicon phototransistor in a du al in-line package. T h e se devices are also available in

"VDSS 800V" 40A mosfet

Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB011N40P1

Abstract: KHB011N40F1
Contextual Info: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

D 92 M - 02 DIODE

Abstract: c 92 M - 02 DIODE jd150 KHB3D0N70F KHB3D0N70P
Contextual Info: SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB3D0N70P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

General Purpose Transistors

Abstract: FHT847 FHT847C
Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors General Purpose Transistors ᄰ፿ྯ૵਌ FHT846/847/848 DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME PIN NUMBER 引腳序號

Contextual Info: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: KHB4D5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

Contextual Info: ঱ኹྯ૵਌ High Voltage Transistors High Voltage Transistors ঱ኹྯ૵਌ FHTA92 DESCRIPTION & FEATURES 概述及特點 High Breakdown Voltage BVCEO=300V 擊穿電壓高（BVCEO=300V） SOT-23 PIN ASSIGNMENT 引腳說明 PIN NUMBER 引腳序號 SOT-23

Contextual Info: SMD • B 17-223/BHR7C-C30/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type. ․Pb-free. ․The product itself will remain within RoHS compliant version.

Contextual Info: Technical Data Sheet 0603 Package Chip LED 0.2mm Height 19-219/GBC-YT2V1EW/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

Contextual Info: SMD 19-037A/RSGHBHW1-S03/2T Features  Package in 8mm tape on 7〞diameter reel  Compatible with automatic placement equipment  Compatible with infrared and vapor phase reflow  Solder process  Full-color type  Pb-free  Component solderable surface finish is Gold

QPB830W

Abstract: OPTEK slotted OPB830W OPB840W dual Phototransistor slotted LED IR SENSOR
Contextual Info: OPTEK Product Bulletin OPB830W January 2005 Slotted Optical Switches Types OPB83QW, OPB84QW Series Features • 0.125" 3.18 mm wide slot • Choice of aperture • Choice of opaque or IR transmissive shell material • Side mount configuration • 24", 26AWG wire leads

O2W transistor

Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

Contextual Info: SEMICONDUCTOR KU3600N10D TECHNICAL DATA N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and

KF4N20

Abstract: KF4N20LD 3V02
Contextual Info: SEMICONDUCTOR KF4N20LD/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF4N20LD This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and

Contextual Info: SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

Contextual Info: SEMICONDUCTOR KHB4D5N60P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

Contextual Info: SMD 1 Low Power LED 61-238/XK2C-SXXXXXXXXXX/ET Features ‧ P-LCC-6 package ‧ Top view LED ‧ Wide viewing angle:120° ‧ High Luminous intensity ‧ High Efficacy ‧ Pb-free ‧ RoHS-compliant ‧ ANSI Binning . Description ˙The Everlight 61-238 package has high efficacy, high CRI, low power consumption, wide viewing angle and a compact