BUX86 TRANSISTOR Search Results

BUX86

Abstract: UG77A bux87 TO126 BUX87 philips bux86 philips bux87
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUX86; BUX87 High-voltage, high-speed, glass-passivated npn power transistors in T O -126 envelopes, fo r use in con­ verters, inverters, switching regulators, m otor co n tro l systems and switching applications.

Contextual Info: N AMER PHILIPS/DISCRETE febMTJl 0Q26566 206 b^E D IAPX BUX86 BUX87 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in TO-126 envelopes, fo r use in con­ verters, inverters, switching regulators, m otor control systems and switching applications.

0T33

Contextual Info: 25C » m ÖEBSbQS 00QMÖ72 3 « S I E G • j~~35-0? NPN Silicon High Voltage Switching Transistors BUX 86 BLfX 87 - SIEMENS AKTIENüE SE LL SC HA F -BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic

BD139 heat sink

Abstract: BD133 BD23B box78 bux87 B0137 BF468 BD232 bzw86 BD136
Contextual Info: Transistors silicon plastic-encapsulated transistors book 1 parts 1 and 2 Type No. N-P-N VcBO VcEO P-N-P V Outline TO-126 M axim u m Ratings •CM IctAV) (V ) (A ) (A) T| (°C> Hfe at fT Vcasat) m in. m ax. Ic m in. m ax. Ptot Tmb= 25 C (W) Im A) (M H z) (V)

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

ESM40

Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
Contextual Info: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

Amplifier with transistor BC548

Abstract: AUDIO Amplifier with transistor BC548 1315 TRANSISTOR transistor 1151 transistor transistor 2n5401 TDA7050 BC327 NPN transistor datasheet BC547 driver BUX86 TRANSISTOR
Contextual Info: Philips Semiconductors Semiconductors for Wired Telecom Systems Index Types added to the range since the last issue of data handbook IC03a are shown in bold print. The types showing an “x”instead of a page number, are not printed in the book, but appear in the selection guides

PCF2103

Abstract: PCF2104 PCF2105 LCD 240 x 240 mono TDA7050 BC558 driver BC557 circuits ic Telecom book philips transistor 1094 NPN transistor 310
Contextual Info: Philips Semiconductors Semiconductors for Wired Telecom Systems n ex Types added to the range since the last issue of data handbook IC03a are shown in bold print. The types showing an “x”instead of a page number, are not printed in the book, but appear in the selection guides

SSOP28

Abstract: UBA1707 UBA1707T UBA1707TS MPSA42 SMD
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UBA1707 Cordless telephone, answering machine line interface Product specification Supersedes data of 1998 Jun 11 File under Integrated Circuits, IC03 1999 Feb 17 Philips Semiconductors Product specification Cordless telephone, answering machine

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

resistor MRs25 philips

Abstract: BUX86 TRANSISTOR telephone transmission circuit AN96140 B1123A BUX86P PCA1070 TEA1112 TEA1112A Philips mrs25
Contextual Info: APPLICATION NOTE TEA1112 FOR FRANCE AN96140 Philips Semiconductors TEA1112 FOR FRANCE Application Note AN96140 REVISION HISTORY Date Person 22-1-1997 Soree Accepted 1.0 3-3-1997 Soree AN10040.1 changed into AN96140 19-4-1999 Soree Cross references updated

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

audio automatic gain control

Abstract: "carbon microphone" BUX86 Cordless Phone system block diagram loudspeaker telephone line interface circuit MPSA42 MPSA92 UBA1707 1N4148
Contextual Info: APPLICATION NOTE UBA1707 Cordless Telephone and Answering Machine Line Interface IC AN98036.1 Philips Semiconductors UBA1707 Cordless Telephone and Answering Machine Line Interface IC Application Note AN98036.1 Abstract The UBA1707 is a BICMOS line interface IC for application in mains powered telecom terminals as Cordless

2N3055 TO220

Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2SA1046

Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and

mj15003 equivalent

Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

2SC2246

Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,

transistor 2SA1046

Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V

BU108

Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

IR642

Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —

2SA1046

Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.