ESM40 Search Results

SOT227B package

Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Contextual Info: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

ESM4045DV

Abstract: ESM4045DV, motor ac to dc smps circuit DC/AC to DC smps circuit diagram NPN DARLINGTON POWER MODULE smps schematic
Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM4045AV

Abstract: ESM4045A FASTON ESM4045D CSA50 4045D
Contextual Info: N AMER PHILIPS/DISCRETE bl E D • bb5 3 ^ 3 ]> D Q E â b 0 3 344 *APX ESM4045A V ESM4045D(V) SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

BVW10

Abstract: ESM4045AF ESM4045
Contextual Info: 3GE D • T'IE'ìaa? DD3GMSD 1 ■ SGS-THOMSON iLItglFIHWÜ_ ESM4045AF ESM4045AV ~ ^ ~ G ~ S ^ T H 0 M S 0 N NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS

ESM4045DV

Contextual Info: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM4045DV

Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM4045DV

Abstract: 0322AG
Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: ESM4000 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)750 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)6m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ESM4001 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150è V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)750 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)6m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ESM4006 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)600è V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)750 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)6m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

e304 fet

Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092

ESM4045DV

Contextual Info: r^ Z *7 # SGS-THOMSON RfflB gi@llLIÊiri(3 iDes ESM4045DV NPN DARLINGTON POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT

ESM4045AV

Abstract: welding circuit C4503
Contextual Info: S G S -T H O M S O N ESM4045AV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

ESM4045DV

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ ESM4045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT

ESM4045DV

Abstract: P093A
Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM4045DF

Abstract: 258 st FR 9120 ESM4045DV
Contextual Info: 3QE D m 7^5^37 - Q03QM5b 2 S G S-THOMSON SGS-THOMSON - cdM4045DF ESM4045DV T '3 > 3 '3 > 5 NPN DARLINGTON POWER MODULE • HIGH CURRENT POWER B IP O U R MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl DD2fib03 344 H A P X ESM4045A V ESM4045D(V) ; v SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended for use in motor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

ESM4045DV

Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

ESM4001

Abstract: ESM110 ESM100R ESM101R ESM102R ESM4003 ESM4005 ESM4006 ESM4007
Contextual Info: SURFACE MOUNT GLASS PASSIVATED SILICION RECTIFIER MELF PACK PIV (Peak Invers» Voltage) MAX AVG Rectified Current @ Half W ave Rea. Load 60Hz MAX Reverse Current @P!V Voltage 2ffC T a MAX FWO PeaK Surge Current Hz Superirnoased MAX Forward Voltage @25 "C T

fw26025

Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A