BUP60 Search Results

BUP60

Contextual Info: SIEMENS BUP603D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 603D ^CE 600V h 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

H8050

Contextual Info: SIEMENS BUP604 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 604 VCE 600V 80A C Pin 3 E Package Ordering Code TO-218AB Q67040-A4231-A2 Maximum Ratings

BUP60

Contextual Info: SIEMENS BUP604 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 604 VCE 600V C Pin 3 E Ic Package Ordering Code 80A TO-218AB Q67040-A4231-A2 Maximum Ratings

irf250

Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200

BUP602D

Abstract: SGP15N60 SGB15N60 SGW15N60 Q67040-S4235
Contextual Info: Preliminary data SGP15N60, SGB15N60, SGW15N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

MTM2N85

Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o P fi c | I O O I I I P I I I | I I j j CO00 COCO j j ' I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i

BUP60

Abstract: BUP62
Contextual Info: _ — 3 7E SEMELAB LTD DEC 3 Ì D • Ô1331Ô7 G0D02SÖ S E M E IA B m k&r BUP 60 T*.oJ / V o O ^ BUP62 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS PIN 1-G a te

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

80N120

Contextual Info: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode P in i Pin 2 Pin 3 G C E Type VCB h Package Ordering Code BUP 602D

Contextual Info: Preliminary data SIEMENS SGP20N60, SGB20N60, SGW20N60 Fast S-IGBT in NPT-Technology • 7 5 % lower E 0 ff com pared to previous generation com bined with low conduction losses • Short circuit withstand tim e 10 is • D esigned for m oderate and high frequency applications:

BUP602D

Abstract: SGP20N60
Contextual Info: SGP20N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP20N60 600V 20A TO-220 AB Q67040-A . . . . Maximum Ratings

VN64GA

Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o P fi c | I O O I I I P I I I | I I j j CO00 COCO j j ' I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

Contextual Info: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

VN3S00D

Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device Breakdow n V o lta g e (Volts) 100 100 100 100 100 100 100 100 100 100 FiC ^ T ' u TO-3 TO-22QAB rDS(on) (Ohms) 0.055 0.08 0.085 0.11 0.18 0.18 0.25 0.25 0.3

VN3500A

Abstract: VN4000A diode 10a 400v CC IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U /C D M iv ia iv iv ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w i C A lA A ^ / \r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I Packages: BVqss Volts 450-500 TO-3 TO-220 Siliconix

GG 06

Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35

Q67041-A4712-A2

Abstract: SGB20N60 BUP602D Q67040-S4236 SGP20N60 SGW20N60
Contextual Info: Preliminary data SGP20N60, SGB20N60, SGW20N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

2N5101

Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
Contextual Info: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

SGP30N60

Contextual Info: SIEMENS SGP30N60 P relim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE h Package Ordering Code SGP30N60 600V 30A T 0 2 2 0 AB Q67040-A . . . . Maximum Ratings Parameter

siemens igbt

Contextual Info: SIEMENS SGP20N60 P relim inary data IGBT • Latch-up free • Avalanche rated P in i Pin 2 G Ul Type 600V SGP20N60 Pin 3 C E b Package Ordering Code 20A TO-220 AB Q67040-A . . . . Maximum Ratings Symbol Values LU Parameter 600 Collector-emitter voltage Coilector-gate voltage