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    SGP30N60 Search Results

    SGP30N60 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SGP30N60
    Infineon Technologies Fast IGBT in NPT Technology Original PDF 422.86KB 12
    SGP30N60
    Infineon Technologies 30A 600V TO220AB IGBT Original PDF 364.42KB 12
    SGP30N60
    Unknown IGBT ULTRAFAST TO-220 Original PDF 112KB 12
    SGP30N60
    Siemens IGBT Original PDF 62.22KB 5
    SGP30N60
    Siemens Original PDF 1.09MB 7
    SGP30N60HS
    Infineon Technologies 30A 600V TO220 IGBT Original PDF 368.22KB 12
    SGP30N60HS
    Infineon Technologies High Speed IGBT in NPT-technology Original PDF 312.34KB 11
    SGP30N60HSXKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO220-3 Original PDF 358.89KB
    SGP30N60XKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO263 Original PDF 363.24KB
    SF Impression Pixel

    SGP30N60 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SGP30N60

    INSULATED GATE BIPOLAR TRANSISTOR, 41A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () SGP30N60 25
    • 1 $3.58
    • 10 $2.62
    • 100 $2.62
    • 1000 $2.62
    • 10000 $2.62
    Buy Now
    SGP30N60 20
    • 1 $3.58
    • 10 $2.62
    • 100 $2.62
    • 1000 $2.62
    • 10000 $2.62
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    ComSIT USA SGP30N60 640
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    Infineon Technologies AG SGP30N60HSXKSA1

    Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian SGP30N60HSXKSA1 11,145
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    Infineon Technologies AG SGP30N60XKSA1

    Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian SGP30N60XKSA1 6,888
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    SGP30N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7262-S

    Abstract: SGP30N60 SIGC25T60SNC
    Contextual Info: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn


    Original
    sigc25t60sncsgp30n60q67041-a4667a001q67041-a4667a002+17262-s PDF

    SGP30N60HS

    Abstract: SGW30N60HS 3UAT
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hsp-to-220-3-1o-220ab+4p-to-247-3-1o-247acq67040-s45003uat PDF

    Contextual Info: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgb30n60sgw30n60o-220ab+4q67041-a4713-a2o-263abq67041-a4713-a4o-247ac PDF

    Contextual Info: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn


    Original
    sigc25t60sncsgp30n60q67041-a4667a001q67041-a4667a002+17262-s PDF

    G15N60

    Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgw30n60pg-to-220-3-1o-220ab+3pg-to-247-3-1o-247acg15n60 PDF

    g30n60hs

    Abstract: g30n60 SGW30N60HS 1A20A
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hspg-to-220-3-1pg-to-247-3-21+3g30n60hsg30n601a20a PDF

    SKW30N60

    Abstract: 02449 SGP30N60
    Contextual Info: Preliminary IGBT same as SGP30N60 SKW30N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    sgp30n60skw30n60o-247acq67040-s4244+2aug-9902449 PDF

    7262-S

    Abstract: s7262s
    Contextual Info: Preliminary SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE This chip is used for: • SGP30N60 G Applications: • drives


    Original
    sigc25t60sncsgp30n60q67041-a4667sawnq67041-a4667unsawn+27262-ss7262s PDF

    SGW30N60HS

    Abstract: SGP30N60HS
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hsp-to-220-3-1o-220ab+3p-to-247-3-1o-247acq67040-s4500 PDF

    SGP30N60HS

    Abstract: SIGC25T60UN
    Contextual Info: SIGC25T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SGP30N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC25T60UN


    Original
    sigc25t60unsgp30n60hsq67041-a4667a0017262-u PDF

    30A20V

    Abstract: Q67040-S4237 SGB30N60 SGP30N60 SGW30N60
    Contextual Info: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgb30n60sgw30n60o-220ab+6q67041-a4713-a2o-263abq67041-a4713-a4o-247ac30a20vq67040-s4237 PDF

    SGP30N60

    Abstract: SIGC25T60SNC
    Contextual Info: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn


    Original
    sigc25t60sncsgp30n60q67041-a4667a001q67041-a4667a002+17262-s PDF

    G30N60

    Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
    Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgw30n60pg-to-220-3-1pg-to-247-3+5g30n60g30n60 igbtg30n60 infineonigbt 400v 100khz 30aigbt 600v 30a PDF

    g30n60

    Abstract: equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21
    Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgw30n60pg-to-220-3-1pg-to-247-3-21+5g30n60equivalent to g30n60g30n60 igbtg30n60 infineon0/equivalent to g30n60 PDF

    Q67040-A4463

    Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
    Contextual Info: SGP30N60 SGB30N60, SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgb30n60sgw30n60o-220ab+5q67040-a4463o-263abq67041-a4713o-247acq67040-s4237 PDF

    g30n60

    Abstract: PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet
    Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgw30n60pg-to-220-3-1pg-to-247-3-21+7g30n60pg-to-220-3-1aing30n60 igbtpg-to220-3-1equivalent to g30n60100w-50wg30n60 data sheet PDF

    G30N60HS

    Abstract: SGP30N60HS G30N60h SGW30N60HS G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hspg-to-220-3-1pg-to-247-3+6g30n60hsg30n60hg30n60g30n60hs pspice high frequency igbtg30n60hs igbtpg-to-247-3-21 PDF

    SGP30N60

    Abstract: SGP30N60 3 BUP603D
    Contextual Info: SGP30N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP30N60 600V 30A TO-220 AB Q67040-A . . . . Maximum Ratings


    Original
    sgp30n60o-220q67040-abup603d+2apr-08-1998sgp30n60 3 PDF

    Contextual Info: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan
    sgp30n60sgb30n60sgw30n60o-220ab+2o-263abq67041-a4713-a2 PDF

    g30N60

    Abstract: G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a
    Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    sgp30n60sgw30n60pg-to-220-3-1pg-to-247-3+7g30n60sgw30n6ntaing30n60 igbtg30n60 infineonequivalent to g30n60pg-to-247-3-21igbt 1000v 30a PDF

    g30n60hs

    Abstract: G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hspg-to-220-3-1pg-to-247-3-21+6g30n60hsg30n60hs igbtg30n60g30n60hg30n60hs pspice high frequency igbtpg-to247-3-21 PDF

    g30n60hs

    Abstract: g30n60 SGW30N60HS SGP30N60HS
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hspg-to-220-3-1pg-to-247-3-21+2g30n60hsg30n60 PDF

    g30n60hs

    Abstract: g30n60 RG111 SGW30N60HS
    Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    sgp30n60hssgw30n60hspg-to-220-3-1o-220ab+5pg-to-247-3-1o-247acg30n60hsg30n60rg111 PDF

    Contextual Info: Preliminary SIGC25T60UN IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC25T60UN VCE 600V This chip is used for: • SGP30N60HS G


    Original
    sigc25t60unsgp30n60hsq67041-a4667sawn7262-u PDF