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    SKW30N60 Search Results

    SKW30N60 Datasheets (6)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SKW30N60
    		Infineon Technologies Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode Original PDF 400.75KB 13
    SKW30N60
    		Infineon Technologies 30A 600V TO247AC IGBT+Diode Original PDF 275.78KB 13
    SKW30N60FKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO247-3 Original PDF 474.46KB
    SKW30N60HS
    		Infineon Technologies High Speed IGBT in NPT-Technology Original PDF 339.62KB 14
    SKW30N60HS
    		Infineon Technologies 30A 600V TO247 IGBT+Diode Original PDF 371.86KB 14
    SKW30N60HSFKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO247-3 Original PDF 356.6KB
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    SKW30N60 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SKW30N60FKSA1

    Trans IGBT Chip N-CH 600V 41A 250W 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical SKW30N60FKSA1 6,000 60
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    • 100 $5.97
    • 1000 $5.35
    • 10000 $5.03
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    Rochester Electronics SKW30N60FKSA1 6,000 1
    • 1 -
    • 10 -
    • 100 $4.78
    • 1000 $4.28
    • 10000 $4.02
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    Vyrian SKW30N60FKSA1 6,274
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    Infineon Technologies AG SKW30N60HSFKSA1

    Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian SKW30N60HSFKSA1 10,837
    • 1 -
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    Infineon Technologies AG SKW30N60HS

    Trans IGBT Chip N-CH 600V 41A 250000mW 3-Pin(3+Tab) TO-247 Tube / HIGH SPEED IGBT IN NPT-TECHNOLOGY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SKW30N60HS 15,633
    • 1 -
    • 10 $9.78
    • 100 $6.52
    • 1000 $6.52
    • 10000 $6.52
    		Buy Now

    SKW30N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K30N60

    Abstract: PDF K30N60 igbt 30A SKW30N60 PG-TO-247-3 1000NC K30N60-
    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		skw30n60k30n60pdf k30n60igbt 30a+3pg-to-247-31000nck30n60- PDF

    K30N60

    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		skw30n60k30n60 PDF

    SKW30N60

    Abstract: 02449 SGP30N60
    Contextual Info: Preliminary IGBT same as SGP30N60 SKW30N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original     		sgp30n60skw30n60o-247acq67040-s4244+2aug-9902449 PDF

    K30N60

    Abstract: IGBT K30N60
    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		skw30n60k30n60igbt k30n60 PDF

    K30N60

    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		skw30n60726-skw30n60k30n60 PDF

    SKW30N60

    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter


    Original     		skw30n60p-to-247-3-1o-247acq67040-s4244+1jul-02 PDF

    SKW30N60

    Contextual Info: SKW30N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		skw30n60o-247acq67040-s4244mar-00 PDF

    k30N60

    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls


    Original     		skw30n60k30n60 PDF

    Q67040-S4244

    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter


    Original     		skw30n60o-247acq67040-s4244dec-01 PDF

    SKW30N60HS

    Contextual Info: Preliminary Datasheet SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		skw30n60hso-247acq67040-s4503jan-02 PDF

    K30N60HS

    Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS
    Contextual Info: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		skw30n60hspg-to-247-3-1q67040ss4503o-247ac+5k30n60hsk30n60hs igbtigbt k30n60hsk30n60equivalent of k30n60hs PDF

    k30N60hs

    Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-
    Contextual Info: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		skw30n60hspg-to-247-3k30n60hsk30n60hs igbt+6k30n60equivalent of k30n60hsigbt k30n60hsigbt skw30n60hs350nsk30n60- PDF

    SKW30N60HS

    Abstract: IGBT SKW30N60HS Q67040-S4503
    Contextual Info: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		skw30n60hsp-to-247-3-1o-247acq67040-s4503+2may-03igbt skw30n60hs PDF

    SKW30N60HS

    Abstract: IGBT SKW30N60HS
    Contextual Info: Preliminary Datasheet SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 16 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution


    Original     		skw30n60hso-247acq67040-s4244-a001sep-01+1igbt skw30n60hs PDF

    K30N60

    Abstract: IGBT K30N60 0N 208 6V 8A US20A K30N60-
    Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		skw30n60k30n60igbt k30n600n 208 6v 8a+2us20ak30n60- PDF

    K30N60HS

    Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS
    Contextual Info: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		skw30n60hspg-to-247-3-21k30n60hsk30n60+3k30n60hs igbtigbt k30n60hsequivalent of k30n60hs PDF

    K30N60HS

    Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS
    Contextual Info: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		skw30n60hspg-to-247-3-21k30n60hsequivalent of k30n60hs+2k30n60k30n60hs igbt PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519b152-h9345-g2-x-7600px3544px7510+8px3560ice2as01 equivalentpx3540primarion px3540ice3br0665jprimarion px3560ice3br4765ice3br1765j PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9transistor smd code package sot89bts 2140 1b data sheettransistor smd code package sot23psb 6970 hl v1.3pef 24628 e v1.2-ginfineon psb 6970pef 4265 t v2.1ht 1200-4slb 9635 PDF

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Contextual Info: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original     		b152-h7942-x-x-7600igbt dimmerskw30n60hssgp15n120+7igbt 2askp15n60skw25n120220 volt dimmer circuitsgw25n120smps 12 voltskw30n60 PDF

    Electric Welding Machine diagram

    Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS
    Contextual Info: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor


    Original     		10khzo-247tc100o-220+16sgp02n60hssgp04n60hssgp06n60hssgp20n60hssgw20n60hssgp30n60hselectric welding machine diagramswitching welding schematic by mosfetwelding machine diagramigbt schematicmosfet for 100khz switching applicationsschematic welding machineigbt weldingswitching welding by mosfetigbtskw30n60hs PDF

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Contextual Info: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		b152-h8202-x-x-7600tda 1682204n60c3 equivalentice1qs01 equivalent+7tda 3050tda 1040tda 16846tda 168881qs0107n60c3 mosfet transistor04n60c3 PDF

    IGBT SKW30N60HS

    Abstract: igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel
    Contextual Info: High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : NPT Technologie : The key component for power Electronic applications – the power switch - is still a


    Original     		10khzo-247tc100sgp02n60hs+16sgp04n60hssgp06n60hssgp20n60hssgw20n60hssgp30n60hssgw30n60hsigbt skw30n60hsigbt 400v 20adc welding machine circuit diagramigbt weldingdata sheet of igbtigbt 600v 20ameasurement of stray inductance for igbtigbt 1200v 20aigbt welding machineigbt parallel PDF