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Vishay Intertechnologies SIHG15N60E-GE3 Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG15N60E-GE3		141		1	1 $4.21 10 $2.99 100 $2.41 1000 $2.41 10000 $2.41	Buy Now
Avnet Americas	SIHG15N60E-GE3	Tape & Reel		45 Weeks	500	1 - 10 - 100 - 1000 $1.48 10000 $1.43	Buy Now
Mouser Electronics	SIHG15N60E-GE3		18			1 $4.81 10 $3.16 100 $2.35 1000 $1.84 10000 $1.84	Buy Now
TTI	SIHG15N60E-GE3	Tube			500	1 - 10 - 100 - 1000 $1.97 10000 $1.97	Buy Now
EBV Elektronik	SIHG15N60E-GE3			39 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NGTG15N60S1EG IGBT 600V 30A SHORT-CIRCUIT 1.5V TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	NGTG15N60S1EG	Bulk			1	1 $3.96 10 $3.96 100 $3.96 1000 $3.96 10000 $3.96	Get Quote
Vyrian	NGTG15N60S1EG		6,233			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHG15N60EGE3 POWER MOSFET Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHG15N60EGE3		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

G15N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgb15n60 p-to-263-3-2 g15n60 pg-to-263-3-2 +2g15n60 igbt pg-to263-3-2	PDF
G15N60 Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgb15n60 pg-to-263-3-2 g15n60 pg-to263-3-2 +1g15n60 igbt	PDF
G15N60 Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp30n60 sgw30n60 pg-to-220-3-1 o-220ab +3pg-to-247-3-1 o-247ac g15n60	PDF
g15n60 Abstract: G15N60 IGBT SGP15N60 sgw15n60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 PG-TO-247-3-2 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp15n60 sgw15n60 pg-to-220-3-1 pg-to-247-3 +5g15n60 15ontain g15n60 igbt pg-to-247-3-21 pg-to-247-3-2	PDF
G15N60S1G Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	ngtg15n60s1eg ngtg15n60s1e/d g15n60s1g	PDF
G15N60 Abstract: PG-TO-247-3-21 SGP15N60 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp15n60 sgw15n60 pg-to-220-3-1 pg-to-247-3-21 +1g15n60	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-247-3-21 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp15n60 sgw15n60 pg-to-220-3-1 pg-to-247-3-21 +2g15n60 g15n60 igbt	PDF
G15N60 Abstract: Q67041-A4711 06mJ Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgb15n60 g15n60 q67041-a4711 06mj	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-247-3-21 Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp30n60 sgw30n60 pg-to-220-3-1 pg-to-247-3-21 +2g15n60 g15n60 igbt	PDF
G15N60HS Abstract: G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535 Contextual Info: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	sgb15n60hs p-to-263-3-2 o-263ab g15n60hs +6q67040-s4ces g15n60 g15n60h marking code smd ic s4535 q67040-s4535	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8 Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	ngtg15n60s1eg ngtg15n60s1e/d g15n60 g15n60s1g +3ngtg15n60 g15n6 22w8	PDF
G15N60HS Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2 Contextual Info: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	sgb15n60hs pg-to-263-3-2 o-263ab g15n60hs +3g15n60 g15n60h pg-to263-3-2	PDF
G15N60 Abstract: 06mJ Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp15n60 sgw15n60 pg-to-220-3-1 o-220ab +4pg-to-247-3-1 o-247ac g15n60 06mj	PDF
G15N60 Abstract: IGBT 400V 100KHZ 30A Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgb15n60 g15n60 igbt 400v 100khz 30a	PDF

G15N60 Abstract: G15N60 IGBT PG-TO-247-3-21 PG-TO220-3-1 PG-TO-220-3-1 SGP30N60 SGW30N60 30A, 600v DIODE g15N6 Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp30n60 sgw30n60 pg-to-220-3-1 pg-to-247-3-21 +6g15n60 pg-to-220-3-1ain g15n60 igbt pg-to220-3-1 30a, 600v diode g15n6	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 NGTB15N60S1 Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	ngtg15n60s1eg ngtg15n60s1e/d g15n60 g15n60s1g +2ngtg15n60 ngtb15n60s1	PDF
G15N60 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgp15n60 sgw15n60 pg-to-220-3-1 pg-to-247-3-21 +1g15n60	PDF
Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	sgb15n60 p-to-263-3-2 g15n60 pg-to-263-3-2	PDF
G15N60S1G Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	ngtg15n60s1eg ngtg15n60s1e/d g15n60s1g	PDF
G15N60 Abstract: NGTG15N60 G15N60S1G Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	ngtg15n60s1eg ngtg15n60s1e/d g15n60 ngtg15n60 +1g15n60s1g	PDF

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G15N60 Price and Stock

Vishay Intertechnologies SIHG15N60E-GE3

onsemi NGTG15N60S1EG

Vishay Intertechnologies SIHG15N60EGE3

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