NGTB15N60S1 Search Results

NGTB15N60S1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NGTB15N60S1EG		On Semiconductor	NGTB15 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	175.33KB	10

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onsemi NGTB15N60S1EG IGBT NPT 600V 30A TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTB15N60S1EG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	NGTB15N60S1EG		1,550		266	1 - 10 - 100 - 1000 $1.17 10000 $1.05	Buy Now
Rochester Electronics	NGTB15N60S1EG		1,584		1	1 - 10 - 100 $1.13 1000 $0.94 10000 $0.84	Buy Now
Chip Stock	NGTB15N60S1EG		14,900			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	NGTB15N60S1EG		11,400			1 - 10 - 100 $1.40 1000 $1.14 10000 $1.14	Buy Now

NGTB15N60S1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTB15N60S1EG NGTB15N60S1E/D	PDF
15N60S1G Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G	PDF
Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTB15N60S1EG NGTB15N60S1E/D	PDF
15N60 Abstract: NGTB15N60S1EG Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTB15N60S1EG NGTB15N60S1E/D 15N60	PDF
NGTB15N60S1EG Abstract: 15N60S1G Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G	PDF
G15N60S1G Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G	PDF
CECA Abstract: MS-2758 Contextual Info: 技术文章 MS-2758 利用数字隔离器技术增强工业电机控制性能作者：Dara O'Sullivan 系统工程师和Maurice Moroney (技术营销经理)，ADI公司隔离类型简介隔离用户及敏感电子部件是电机控制系统的重要考虑事	Original	MS-2758 MS-2576æ NGTB15N60S1EGï TA12881sc-0-11/14 CECA MS-2758	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8 Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8	PDF
Contextual Info: AND9100/D Paralleling of IGBTs Introduction http://onsemi.com High power systems require the paralleling of IGBTs to handle loads well into the 10’s and sometimes the 100’s of kilowatts. Paralleled devices can be discrete packaged devices, or bare die assembled within a module. This is done	Original	AND9100/D	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 NGTB15N60S1 Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1	PDF
G15N60S1G Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G	PDF
G15N60 Abstract: NGTG15N60 G15N60S1G Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G	PDF